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Title: Pressure-Induced Metallization and Robust Superconductivity in Pristine 1 T -SnSe 2

Authors:
ORCiD logo [1];  [2];  [1];  [1];  [2];  [2];  [3];  [4];  [2];  [4];  [1];  [5];  [6];  [7];  [8];  [9]
  1. Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031 China
  2. Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031 China, University of Science and Technology of China, Hefei 230026 China
  3. SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 China
  4. Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031 China, Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 China
  5. HPCAT, Geophysical Laboratory, Carnegie Institution of Washington, Argonne IL 60439 USA
  6. Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031 China, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 China
  7. College of Electronic Science and Technology, Shenzhen University, Shenzhen 518060 China
  8. SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 China, College of Materials science & Opto-Electronic Technology, and Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Science, Beijing 100049 China
  9. Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031 China, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 China, Institute of Physical Science and Information Technology, Anhui University, Hefei 230601 China
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1460589
Grant/Contract Number:  
NA0001974; FG02-99ER45775; AC02-06CH11357
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Electronic Materials
Additional Journal Information:
Journal Name: Advanced Electronic Materials Journal Volume: 4 Journal Issue: 8; Journal ID: ISSN 2199-160X
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
United States
Language:
English

Citation Formats

Zhou, Yonghui, Zhang, Bowen, Chen, Xuliang, Gu, Chuanchuan, An, Chao, Zhou, Ying, Cai, Kaiming, Yuan, Yifang, Chen, Chunhua, Wu, Hao, Zhang, Ranran, Park, Changyong, Xiong, Yimin, Zhang, Xiuwen, Wang, Kaiyou, and Yang, Zhaorong. Pressure-Induced Metallization and Robust Superconductivity in Pristine 1 T -SnSe 2. United States: N. p., 2018. Web. doi:10.1002/aelm.201800155.
Zhou, Yonghui, Zhang, Bowen, Chen, Xuliang, Gu, Chuanchuan, An, Chao, Zhou, Ying, Cai, Kaiming, Yuan, Yifang, Chen, Chunhua, Wu, Hao, Zhang, Ranran, Park, Changyong, Xiong, Yimin, Zhang, Xiuwen, Wang, Kaiyou, & Yang, Zhaorong. Pressure-Induced Metallization and Robust Superconductivity in Pristine 1 T -SnSe 2. United States. doi:10.1002/aelm.201800155.
Zhou, Yonghui, Zhang, Bowen, Chen, Xuliang, Gu, Chuanchuan, An, Chao, Zhou, Ying, Cai, Kaiming, Yuan, Yifang, Chen, Chunhua, Wu, Hao, Zhang, Ranran, Park, Changyong, Xiong, Yimin, Zhang, Xiuwen, Wang, Kaiyou, and Yang, Zhaorong. Sun . "Pressure-Induced Metallization and Robust Superconductivity in Pristine 1 T -SnSe 2". United States. doi:10.1002/aelm.201800155.
@article{osti_1460589,
title = {Pressure-Induced Metallization and Robust Superconductivity in Pristine 1 T -SnSe 2},
author = {Zhou, Yonghui and Zhang, Bowen and Chen, Xuliang and Gu, Chuanchuan and An, Chao and Zhou, Ying and Cai, Kaiming and Yuan, Yifang and Chen, Chunhua and Wu, Hao and Zhang, Ranran and Park, Changyong and Xiong, Yimin and Zhang, Xiuwen and Wang, Kaiyou and Yang, Zhaorong},
abstractNote = {},
doi = {10.1002/aelm.201800155},
journal = {Advanced Electronic Materials},
number = 8,
volume = 4,
place = {United States},
year = {2018},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1002/aelm.201800155

Citation Metrics:
Cited by: 5 works
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