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Title: Relaxation of asymmetric crystallographic tilt: In situ x-ray diffraction studies of epitaxial electrodeposition of bismuth on GaAs (110)

Authors:
ORCiD logo [1] ;  [2] ;  [3] ;  [4] ; ORCiD logo [1]
  1. School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA, Cornell High Energy Synchrotron Source, Cornell University, Ithaca, New York 14853, USA
  2. Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, Ciudad Universitaria de Canto-blanco, 28049 Madrid, Spain
  3. Cornell High Energy Synchrotron Source, Cornell University, Ithaca, New York 14853, USA
  4. Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853, USA
Publication Date:
Grant/Contract Number:
SC0001086
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 124 Journal Issue: 3; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1460499

Huang, Xin, Plaza, Manuel, Ko, J. Y. Peter, Abruña, Héctor D., and Brock, Joel D.. Relaxation of asymmetric crystallographic tilt: In situ x-ray diffraction studies of epitaxial electrodeposition of bismuth on GaAs (110). United States: N. p., Web. doi:10.1063/1.5026630.
Huang, Xin, Plaza, Manuel, Ko, J. Y. Peter, Abruña, Héctor D., & Brock, Joel D.. Relaxation of asymmetric crystallographic tilt: In situ x-ray diffraction studies of epitaxial electrodeposition of bismuth on GaAs (110). United States. doi:10.1063/1.5026630.
Huang, Xin, Plaza, Manuel, Ko, J. Y. Peter, Abruña, Héctor D., and Brock, Joel D.. 2018. "Relaxation of asymmetric crystallographic tilt: In situ x-ray diffraction studies of epitaxial electrodeposition of bismuth on GaAs (110)". United States. doi:10.1063/1.5026630.
@article{osti_1460499,
title = {Relaxation of asymmetric crystallographic tilt: In situ x-ray diffraction studies of epitaxial electrodeposition of bismuth on GaAs (110)},
author = {Huang, Xin and Plaza, Manuel and Ko, J. Y. Peter and Abruña, Héctor D. and Brock, Joel D.},
abstractNote = {},
doi = {10.1063/1.5026630},
journal = {Journal of Applied Physics},
number = 3,
volume = 124,
place = {United States},
year = {2018},
month = {7}
}