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Title: Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity

Abstract

Abstract Conducting ferroelectric domain walls attract a wide range of research interest due to their promising applications in nanoelectronics. In this study, we reveal an unexpected enhanced conductivity near the well‐aligned 71° nonpolar domain walls in BiFeO 3 . Such an interfacial conductivity is induced by the creation of up‐polarized nano‐domains near the 71° domain walls, as revealed by the combination of the piezo‐response force microscopy (PFM) and conducting atomic force microscopy (c‐AFM) imaging techniques, as well as phase‐field simulations. The upward polarized domains are suggested to lower the Schottky barrier at the interface between the tip and sample surface, and then give rise to the enhanced interfacial conductivity. The result provides a new strategy to tune the local conductance in ferroelectric materials and opens up new opportunities to design novel nanoelectronic devices.

Authors:
 [1];  [2];  [3];  [4];  [1];  [5];  [1];  [1];  [6];  [4];  [2];  [7]
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  1. State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics Tsinghua University Beijing 100084 China
  2. State Key Lab of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 China
  3. Department of Physics Durham University Durham DH1 3LE UK
  4. Department of Materials Science and Engineering National Chiao Tung University Hsinchu 30010 Taiwan
  5. Department of Physics National Cheng Kung University Tainan 70101 Taiwan
  6. State Key Lab of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 China, Department of Materials Science and Engineering Pennsylvania State University University Park PA 16802 USA
  7. State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics Tsinghua University Beijing 100084 China, Collaborative Innovation Center of Quantum Matter Beijing 100084 China, RIKEN Center for Emergent Matter Science Wako 351‐198 Japan
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1460462
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Annalen der Physik (Leipzig)
Additional Journal Information:
Journal Name: Annalen der Physik (Leipzig) Journal Volume: 530 Journal Issue: 8; Journal ID: ISSN 0003-3804
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Yang, Shuzhen, Peng, Ren‐Ci, He, Qing, Huang, Yen‐Lin, Huang, Yijing, Yang, Jan‐Chi, Chen, Tianzhe, Guo, Jingwen, Chen, Long‐Qing, Chu, Ying‐Hao, Nan, Ce‐Wen, and Yu, Pu. Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity. Germany: N. p., 2018. Web. doi:10.1002/andp.201800130.
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Yang, Shuzhen, Peng, Ren‐Ci, He, Qing, Huang, Yen‐Lin, Huang, Yijing, Yang, Jan‐Chi, Chen, Tianzhe, Guo, Jingwen, Chen, Long‐Qing, Chu, Ying‐Hao, Nan, Ce‐Wen, & Yu, Pu. Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity. Germany. https://doi.org/10.1002/andp.201800130
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Yang, Shuzhen, Peng, Ren‐Ci, He, Qing, Huang, Yen‐Lin, Huang, Yijing, Yang, Jan‐Chi, Chen, Tianzhe, Guo, Jingwen, Chen, Long‐Qing, Chu, Ying‐Hao, Nan, Ce‐Wen, and Yu, Pu. Sun . "Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity". Germany. https://doi.org/10.1002/andp.201800130.
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@article{osti_1460462,
title = {Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity},
author = {Yang, Shuzhen and Peng, Ren‐Ci and He, Qing and Huang, Yen‐Lin and Huang, Yijing and Yang, Jan‐Chi and Chen, Tianzhe and Guo, Jingwen and Chen, Long‐Qing and Chu, Ying‐Hao and Nan, Ce‐Wen and Yu, Pu},
abstractNote = {Abstract Conducting ferroelectric domain walls attract a wide range of research interest due to their promising applications in nanoelectronics. In this study, we reveal an unexpected enhanced conductivity near the well‐aligned 71° nonpolar domain walls in BiFeO 3 . Such an interfacial conductivity is induced by the creation of up‐polarized nano‐domains near the 71° domain walls, as revealed by the combination of the piezo‐response force microscopy (PFM) and conducting atomic force microscopy (c‐AFM) imaging techniques, as well as phase‐field simulations. The upward polarized domains are suggested to lower the Schottky barrier at the interface between the tip and sample surface, and then give rise to the enhanced interfacial conductivity. The result provides a new strategy to tune the local conductance in ferroelectric materials and opens up new opportunities to design novel nanoelectronic devices.},
doi = {10.1002/andp.201800130},
journal = {Annalen der Physik (Leipzig)},
number = 8,
volume = 530,
place = {Germany},
year = {Sun Jul 15 00:00:00 EDT 2018},
month = {Sun Jul 15 00:00:00 EDT 2018}
}
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Journal Article:
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Accepted Manuscript (Publisher)
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https://doi.org/10.1002/andp.201800130
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