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Title: Large-Scale Synthesis of Colloidal Si Nanocrystals and Their Helium Plasma Processing into Spin-On, Carbon-Free Nanocrystalline Si Films

Abstract

This study describes a simple approach to the large-scale synthesis of colloidal Si nanocrystals and their processing into spin-on carbon-free nanocrystalline Si films. The synthesized silicon nanoparticles are capped with decene, dispersed in hexane, and deposited on silicon substrates. The deposited films are exposed to nonoxidizing room-temperature He plasma to remove the organic ligands without adversely affecting the silicon nanoparticles to form crack-free thin films. We further show that the reactive ion etching rate in these films is 1.87 times faster than that for single-crystalline Si, consistent with a simple geometric argument that accounts for the nanoscale roughness caused by the nanoparticle shape.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1]; ORCiD logo [2]; ORCiD logo [2]
  1. Iowa State Univ. of Science and Technology, Ames, IA (United States)
  2. Iowa State Univ. of Science and Technology, Ames, IA (United States); Ames Lab., Ames, IA (United States)
Publication Date:
Research Org.:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1460404
Report Number(s):
IS-J-9706
Journal ID: ISSN 1944-8244
Grant/Contract Number:  
AC02-07CH11358
Resource Type:
Accepted Manuscript
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Volume: 10; Journal Issue: 24; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; carbon free; colloidal nanoparticle; helium plasma; large-scale synthesis; nanocrystalline Si film

Citation Formats

Mohapatra, Pratyasha, Mendivelso-Perez, Deyny, Bobbitt, Jonathan M., Shaw, Santosh, Yuan, Bin, Tian, Xinchun, Smith, Emily A., and Cademartiri, Ludovico. Large-Scale Synthesis of Colloidal Si Nanocrystals and Their Helium Plasma Processing into Spin-On, Carbon-Free Nanocrystalline Si Films. United States: N. p., 2018. Web. doi:10.1021/acsami.8b03771.
Mohapatra, Pratyasha, Mendivelso-Perez, Deyny, Bobbitt, Jonathan M., Shaw, Santosh, Yuan, Bin, Tian, Xinchun, Smith, Emily A., & Cademartiri, Ludovico. Large-Scale Synthesis of Colloidal Si Nanocrystals and Their Helium Plasma Processing into Spin-On, Carbon-Free Nanocrystalline Si Films. United States. doi:10.1021/acsami.8b03771.
Mohapatra, Pratyasha, Mendivelso-Perez, Deyny, Bobbitt, Jonathan M., Shaw, Santosh, Yuan, Bin, Tian, Xinchun, Smith, Emily A., and Cademartiri, Ludovico. Wed . "Large-Scale Synthesis of Colloidal Si Nanocrystals and Their Helium Plasma Processing into Spin-On, Carbon-Free Nanocrystalline Si Films". United States. doi:10.1021/acsami.8b03771. https://www.osti.gov/servlets/purl/1460404.
@article{osti_1460404,
title = {Large-Scale Synthesis of Colloidal Si Nanocrystals and Their Helium Plasma Processing into Spin-On, Carbon-Free Nanocrystalline Si Films},
author = {Mohapatra, Pratyasha and Mendivelso-Perez, Deyny and Bobbitt, Jonathan M. and Shaw, Santosh and Yuan, Bin and Tian, Xinchun and Smith, Emily A. and Cademartiri, Ludovico},
abstractNote = {This study describes a simple approach to the large-scale synthesis of colloidal Si nanocrystals and their processing into spin-on carbon-free nanocrystalline Si films. The synthesized silicon nanoparticles are capped with decene, dispersed in hexane, and deposited on silicon substrates. The deposited films are exposed to nonoxidizing room-temperature He plasma to remove the organic ligands without adversely affecting the silicon nanoparticles to form crack-free thin films. We further show that the reactive ion etching rate in these films is 1.87 times faster than that for single-crystalline Si, consistent with a simple geometric argument that accounts for the nanoscale roughness caused by the nanoparticle shape.},
doi = {10.1021/acsami.8b03771},
journal = {ACS Applied Materials and Interfaces},
number = 24,
volume = 10,
place = {United States},
year = {2018},
month = {5}
}

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