Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature
Abstract
The field of valleytronics has promised greater control of electronic and spintronic systems with an additional valley degree of freedom. However, conventional and two-dimensional valleytronic systems pose practical challenges in the utilization of this valley degree of freedom. Here we show experimental evidences of the valley effect in a bulk, ambient, and bias-free model system of Tin(II) sulfide. We elucidate the direct access and identification of different sets of valleys, based primarily on the selectivity in absorption and emission of linearly polarized light by optical reflection/transmission and photoluminescence measurements, and demonstrate strong optical dichroic anisotropy of up to 600% and nominal polarization degrees of up to 96% for the two valleys with band-gap values 1.28 and 1.48 eV, respectively; the ease of valley selection further manifested in their non-degenerate nature. Such discovery enables a new platform for better access and control of valley polarization.
- Authors:
-
- Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- National Univ. of Singapore (Singapore)
- Nanjing Univ. of Posts and Telecommunications, Nanjing (People's Republic of China)
- Univ. of California, Berkeley, CA (United States)
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1460351
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nature Communications
- Additional Journal Information:
- Journal Volume: 9; Journal Issue: 1; Related Information: © 2018 The Author(s).; Journal ID: ISSN 2041-1723
- Publisher:
- Nature Publishing Group
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Lin, Shuren, Carvalho, Alexandra, Yan, Shancheng, Li, Roger, Kim, Sujung, Rodin, Aleksandr, Carvalho, Lidia, Chan, Emory M., Wang, Xi, Castro Neto, Antonio H., and Yao, Jie. Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature. United States: N. p., 2018.
Web. doi:10.1038/s41467-018-03897-3.
Lin, Shuren, Carvalho, Alexandra, Yan, Shancheng, Li, Roger, Kim, Sujung, Rodin, Aleksandr, Carvalho, Lidia, Chan, Emory M., Wang, Xi, Castro Neto, Antonio H., & Yao, Jie. Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature. United States. https://doi.org/10.1038/s41467-018-03897-3
Lin, Shuren, Carvalho, Alexandra, Yan, Shancheng, Li, Roger, Kim, Sujung, Rodin, Aleksandr, Carvalho, Lidia, Chan, Emory M., Wang, Xi, Castro Neto, Antonio H., and Yao, Jie. Fri .
"Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature". United States. https://doi.org/10.1038/s41467-018-03897-3. https://www.osti.gov/servlets/purl/1460351.
@article{osti_1460351,
title = {Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature},
author = {Lin, Shuren and Carvalho, Alexandra and Yan, Shancheng and Li, Roger and Kim, Sujung and Rodin, Aleksandr and Carvalho, Lidia and Chan, Emory M. and Wang, Xi and Castro Neto, Antonio H. and Yao, Jie},
abstractNote = {The field of valleytronics has promised greater control of electronic and spintronic systems with an additional valley degree of freedom. However, conventional and two-dimensional valleytronic systems pose practical challenges in the utilization of this valley degree of freedom. Here we show experimental evidences of the valley effect in a bulk, ambient, and bias-free model system of Tin(II) sulfide. We elucidate the direct access and identification of different sets of valleys, based primarily on the selectivity in absorption and emission of linearly polarized light by optical reflection/transmission and photoluminescence measurements, and demonstrate strong optical dichroic anisotropy of up to 600% and nominal polarization degrees of up to 96% for the two valleys with band-gap values 1.28 and 1.48 eV, respectively; the ease of valley selection further manifested in their non-degenerate nature. Such discovery enables a new platform for better access and control of valley polarization.},
doi = {10.1038/s41467-018-03897-3},
journal = {Nature Communications},
number = 1,
volume = 9,
place = {United States},
year = {2018},
month = {4}
}
Web of Science
Works referenced in this record:
Coupled Spin and Valley Physics in Monolayers of and Other Group-VI Dichalcogenides
journal, May 2012
- Xiao, Di; Liu, Gui-Bin; Feng, Wanxiang
- Physical Review Letters, Vol. 108, Issue 19
Physical vapor deposition synthesis of two-dimensional orthorhombic SnS flakes with strong angle/temperature-dependent Raman responses
journal, January 2016
- Xia, Jing; Li, Xuan-Ze; Huang, Xing
- Nanoscale, Vol. 8, Issue 4
Generalized Gradient Approximation Made Simple [Phys. Rev. Lett. 77, 3865 (1996)]
journal, February 1997
- Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
- Physical Review Letters, Vol. 78, Issue 7
Polarization and valley switching in monolayer group-IV monochalcogenides
journal, July 2016
- Hanakata, Paul Z.; Carvalho, Alexandra; Campbell, David K.
- Physical Review B, Vol. 94, Issue 3
Valley filter and valley valve in graphene
journal, February 2007
- Rycerz, A.; Tworzydło, J.; Beenakker, C. W. J.
- Nature Physics, Vol. 3, Issue 3, p. 172-175
Spin and pseudospins in layered transition metal dichalcogenides
journal, April 2014
- Xu, Xiaodong; Yao, Wang; Xiao, Di
- Nature Physics, Vol. 10, Issue 5
QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
journal, September 2009
- Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola
- Journal of Physics: Condensed Matter, Vol. 21, Issue 39, Article No. 395502
Phosphorene analogues: Isoelectronic two-dimensional group-IV monochalcogenides with orthorhombic structure
journal, August 2015
- Gomes, Lídia C.; Carvalho, A.
- Physical Review B, Vol. 92, Issue 8
Valley Splitting of AlAs Two-Dimensional Electrons in a Perpendicular Magnetic Field
journal, November 2002
- Shkolnikov, Y. P.; De Poortere, E. P.; Tutuc, E.
- Physical Review Letters, Vol. 89, Issue 22
Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide
journal, April 2016
- Ye, Yu; Xiao, Jun; Wang, Hailong
- Nature Nanotechnology, Vol. 11, Issue 7
Valley-Valley Splitting in Inversion Layers on a High-Index Surface of Silicon
journal, February 1978
- Sham, L. J.; Allen, S. J.; Kamgar, A.
- Physical Review Letters, Vol. 40, Issue 7
Valley Susceptibility of an Interacting Two-Dimensional Electron System
journal, November 2006
- Gunawan, O.; Shkolnikov, Y. P.; Vakili, K.
- Physical Review Letters, Vol. 97, Issue 18
Valley Polarization in Si(100) at Zero Magnetic Field
journal, June 2006
- Takashina, K.; Ono, Y.; Fujiwara, A.
- Physical Review Letters, Vol. 96, Issue 23
Anomalously robust valley polarization and valley coherence in bilayer WS2
journal, July 2014
- Zhu, B.; Zeng, H.; Dai, J.
- Proceedings of the National Academy of Sciences, Vol. 111, Issue 32
Valley physics in tin (II) sulfide
journal, January 2016
- Rodin, A. S.; Gomes, Lidia C.; Carvalho, A.
- Physical Review B, Vol. 93, Issue 4
On the Application of Interference Phenomena to the Solution of Various Problems of Spectroscopy and Metrology
journal, February 1899
- Perot, A.; Fabry, Charles
- The Astrophysical Journal, Vol. 9
High-throughput electronic band structure calculations: Challenges and tools
journal, August 2010
- Setyawan, Wahyu; Curtarolo, Stefano
- Computational Materials Science, Vol. 49, Issue 2
Infrared and Raman spectra of the IV-VI compounds SnS and SnSe
journal, February 1977
- Chandrasekhar, H. R.; Humphreys, R. G.; Zwick, U.
- Physical Review B, Vol. 15, Issue 4
Investigations on SnS
journal, October 1961
- Albers, W.; Haas, C.; Vink, H. J.
- Journal of Applied Physics, Vol. 32, Issue 10
Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy
journal, February 2017
- Tian, Zhen; Guo, Chenglei; Zhao, Mingxing
- ACS Nano, Vol. 11, Issue 2
Valleytronics in 2D materials
journal, August 2016
- Schaibley, John R.; Yu, Hongyi; Clark, Genevieve
- Nature Reviews Materials, Vol. 1, Issue 11
Nanostructured SnS with inherent anisotropic optical properties for high photoactivity
journal, January 2016
- Patel, Malkeshkumar; Chavda, Arvind; Mukhopadhyay, Indrajit
- Nanoscale, Vol. 8, Issue 4
Optical Constants of the Noble Metals
journal, December 1972
- Johnson, P. B.; Christy, R. W.
- Physical Review B, Vol. 6, Issue 12, p. 4370-4379
Generation, transport and detection of valley-polarized electrons in diamond
journal, July 2013
- Isberg, Jan; Gabrysch, Markus; Hammersberg, Johan
- Nature Materials, Vol. 12, Issue 8
Electrons, holes, and spin in the IV-VI monolayer four-six-enes
journal, October 2016
- Appelbaum, Ian; Li, Pengke
- Physical Review B, Vol. 94, Issue 15
Control of valley polarization in monolayer MoS2 by optical helicity
journal, June 2012
- Mak, Kin Fai; He, Keliang; Shan, Jie
- Nature Nanotechnology, Vol. 7, Issue 8
Temperature dependence of the energy gap in semiconductors
journal, January 1967
- Varshni, Y. P.
- Physica, Vol. 34, Issue 1
Valley polarization in MoS2 monolayers by optical pumping
journal, June 2012
- Zeng, Hualing; Dai, Junfeng; Yao, Wang
- Nature Nanotechnology, Vol. 7, Issue 8
Optical properties and electronic structure of amorphous Ge and Si
journal, January 1968
- Tauc, J.
- Materials Research Bulletin, Vol. 3, Issue 1
Efficient pseudopotentials for plane-wave calculations
journal, January 1991
- Troullier, N.; Martins, José Luriaas
- Physical Review B, Vol. 43, Issue 3
In-Plane Anisotropies of Polarized Raman Response and Electrical Conductivity in Layered Tin Selenide
journal, March 2017
- Xu, Xiaolong; Song, Qingjun; Wang, Haifeng
- ACS Applied Materials & Interfaces, Vol. 9, Issue 14
High-throughput electronic band structure calculations: challenges and tools
text, January 2010
- Setyawan, Wahyu; Curtarolo, Stefano
- arXiv
In-Plane Anisotropies of Polarized Raman Response and Electrical Conductivity in Layered Tin Selenide
preprint, January 2017
- Xu, Xiaolong; Song, Qingjun; Wang, Haifeng
- arXiv
Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field
text, January 2002
- Shkolnikov, Y. P.; De Poortere, E. P.; Tutuc, E.
- arXiv
Valley susceptibility of an interacting two-dimensional electron system
text, January 2006
- Gunawan, O.; Shkolnikov, Y. P.; Vakili, K.
- arXiv
Valley filter and valley valve in graphene
text, January 2006
- Rycerz, A.; Tworzydlo, J.; Beenakker, C. W. J.
- arXiv
Works referencing / citing this record:
Growth of Large-Area SnS Films with Oriented 2D SnS Layers for Energy-Efficient Broadband Optoelectronics
journal, August 2018
- Patel, Malkeshkumar; Kim, Joondong; Kim, Yu Kwon
- Advanced Functional Materials, Vol. 28, Issue 40
Wrap‐Around Core–Shell Heterostructures of Layered Crystals
journal, May 2019
- Sutter, Peter; Wang, Jia; Sutter, Eli
- Advanced Materials, Vol. 31, Issue 29
Liquid exfoliation of electronic grade ultrathin tin(II) sulfide (SnS) with intriguing optical response
journal, January 2020
- Sarkar, Abdus Salam; Mushtaq, Aamir; Kushavah, Dushyant
- npj 2D Materials and Applications, Vol. 4, Issue 1
Colloidal tin sulfide nanosheets: formation mechanism, ligand-mediated shape tuning and photo-detection
journal, January 2018
- Li, Fu; Ramin Moayed, Mohammad Mehdi; Gerdes, Frauke
- Journal of Materials Chemistry C, Vol. 6, Issue 35
In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects
journal, January 2020
- Zhao, Siwen; Dong, Baojuan; Wang, Huide
- Nanoscale Advances, Vol. 2, Issue 1
Phonon band gaps in the IV-VI monochalcogenides
journal, August 2019
- Argaman, Uri; Abutbul, Ran E.; Golan, Yuval
- Physical Review B, Vol. 100, Issue 5
Quantum confinement-induced enhanced nonlinearity and carrier lifetime modulation in two-dimensional tin sulfide
journal, January 2020
- Zhang, Feng; Xu, Ning; Zhao, Jinlai
- Nanophotonics, Vol. 9, Issue 7
Production of SnS2 Nanostructure as Improved Light-Assisted Electrochemical Water Splitting
journal, September 2019
- Song, Haizeng; Wu, Han; Gao, Yuan
- Nanomaterials, Vol. 9, Issue 9
Colloidal Tin Sulfide Nanosheets: Formation Mechanism, Ligand-mediated Shape Tuning and Photo-detection
text, January 2018
- Li, Fu; Moayed, Mohammad Mehdi Ramin; Gerdes, Frauke
- arXiv