Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature

Lin, Shuren; Carvalho, Alexandra; Yan, Shancheng; Li, Roger; Kim, Sujung; Rodin, Aleksandr; Carvalho, Lidia; Chan, Emory M.; Wang, Xi; Castro Neto, Antonio H.; Yao, Jie

doi:10.1038/s41467-018-03897-3

Title: Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature

Journal Article · 13 April 2018 · Nature Communications

DOI: https://doi.org/10.1038/s41467-018-03897-3 · OSTI ID:1460351

Lin, Shuren ^[1]; Carvalho, Alexandra ^[2]; Yan, Shancheng ^[3]; Li, Roger ^[4]; Kim, Sujung ^[4]; Rodin, Aleksandr ^[2]; Carvalho, Lidia ^[2]; Chan, Emory M. ^[5]; Wang, Xi ^[4];

^[2]; Yao, Jie ^[1]

Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
National Univ. of Singapore (Singapore)
Nanjing Univ. of Posts and Telecommunications, Nanjing (People's Republic of China)
Univ. of California, Berkeley, CA (United States)
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

The field of valleytronics has promised greater control of electronic and spintronic systems with an additional valley degree of freedom. However, conventional and two-dimensional valleytronic systems pose practical challenges in the utilization of this valley degree of freedom. Here we show experimental evidences of the valley effect in a bulk, ambient, and bias-free model system of Tin(II) sulfide. We elucidate the direct access and identification of different sets of valleys, based primarily on the selectivity in absorption and emission of linearly polarized light by optical reflection/transmission and photoluminescence measurements, and demonstrate strong optical dichroic anisotropy of up to 600% and nominal polarization degrees of up to 96% for the two valleys with band-gap values 1.28 and 1.48 eV, respectively; the ease of valley selection further manifested in their non-degenerate nature. Such discovery enables a new platform for better access and control of valley polarization.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1460351

Journal Information:: Nature Communications, Vol. 9, Issue 1; Related Information: © 2018 The Author(s).; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 50 works

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References (51)

Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides Xiao, Di; Liu, Gui-Bin; Feng, Wanxiang Physical Review Letters, Vol. 108, Issue 19 https://doi.org/10.1103/PhysRevLett.108.196802	journal	May 2012
Physical vapor deposition synthesis of two-dimensional orthorhombic SnS flakes with strong angle/temperature-dependent Raman responses Xia, Jing; Li, Xuan-Ze; Huang, Xing Nanoscale, Vol. 8, Issue 4 https://doi.org/10.1039/C5NR07675G	journal	January 2016
Generalized Gradient Approximation Made Simple [Phys. Rev. Lett. 77, 3865 (1996)] Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias Physical Review Letters, Vol. 78, Issue 7 https://doi.org/10.1103/PhysRevLett.78.1396	journal	February 1997
Polarization and valley switching in monolayer group-IV monochalcogenides Hanakata, Paul Z.; Carvalho, Alexandra; Campbell, David K. Physical Review B, Vol. 94, Issue 3 https://doi.org/10.1103/PhysRevB.94.035304	journal	July 2016
Valley filter and valley valve in graphene Rycerz, A.; Tworzydło, J.; Beenakker, C. W. J. Nature Physics, Vol. 3, Issue 3, p. 172-175 https://doi.org/10.1038/nphys547	journal	February 2007
Spin and pseudospins in layered transition metal dichalcogenides Xu, Xiaodong; Yao, Wang; Xiao, Di Nature Physics, Vol. 10, Issue 5 https://doi.org/10.1038/nphys2942	journal	April 2014
QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola Journal of Physics: Condensed Matter, Vol. 21, Issue 39, Article No. 395502 https://doi.org/10.1088/0953-8984/21/39/395502	journal	September 2009
Phosphorene analogues: Isoelectronic two-dimensional group-IV monochalcogenides with orthorhombic structure Gomes, Lídia C.; Carvalho, A. Physical Review B, Vol. 92, Issue 8 https://doi.org/10.1103/PhysRevB.92.085406	journal	August 2015
Valley Splitting of AlAs Two-Dimensional Electrons in a Perpendicular Magnetic Field Shkolnikov, Y. P.; De Poortere, E. P.; Tutuc, E. Physical Review Letters, Vol. 89, Issue 22 https://doi.org/10.1103/PhysRevLett.89.226805	journal	November 2002
Interference-Free Determination of the Optical Absorption Coefficient and the Optical Gap of Amorphous Silicon Thin Films Hishikawa, Yoshihiro; Nakamura, Noboru; Tsuda, Shinya Japanese Journal of Applied Physics, Vol. 30, Issue Part 1, No. 5 https://doi.org/10.1143/JJAP.30.1008	journal	May 1991
Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide Ye, Yu; Xiao, Jun; Wang, Hailong Nature Nanotechnology, Vol. 11, Issue 7 https://doi.org/10.1038/nnano.2016.49	journal	April 2016
Valley-Valley Splitting in Inversion Layers on a High-Index Surface of Silicon Sham, L. J.; Allen, S. J.; Kamgar, A. Physical Review Letters, Vol. 40, Issue 7 https://doi.org/10.1103/PhysRevLett.40.472	journal	February 1978
Valley Susceptibility of an Interacting Two-Dimensional Electron System Gunawan, O.; Shkolnikov, Y. P.; Vakili, K. Physical Review Letters, Vol. 97, Issue 18 https://doi.org/10.1103/PhysRevLett.97.186404	journal	November 2006
Valley Polarization in Si(100) at Zero Magnetic Field Takashina, K.; Ono, Y.; Fujiwara, A. Physical Review Letters, Vol. 96, Issue 23 https://doi.org/10.1103/PhysRevLett.96.236801	journal	June 2006
Anomalously robust valley polarization and valley coherence in bilayer WS2 Zhu, B.; Zeng, H.; Dai, J. Proceedings of the National Academy of Sciences, Vol. 111, Issue 32 https://doi.org/10.1073/pnas.1406960111	journal	July 2014
Valley physics in tin (II) sulfide Rodin, A. S.; Gomes, Lidia C.; Carvalho, A. Physical Review B, Vol. 93, Issue 4 https://doi.org/10.1103/PhysRevB.93.045431	journal	January 2016
On the Application of Interference Phenomena to the Solution of Various Problems of Spectroscopy and Metrology Perot, A.; Fabry, Charles The Astrophysical Journal, Vol. 9 https://doi.org/10.1086/140557	journal	February 1899
High-throughput electronic band structure calculations: Challenges and tools Setyawan, Wahyu; Curtarolo, Stefano Computational Materials Science, Vol. 49, Issue 2 https://doi.org/10.1016/j.commatsci.2010.05.010	journal	August 2010
Infrared and Raman spectra of the IV-VI compounds SnS and SnSe Chandrasekhar, H. R.; Humphreys, R. G.; Zwick, U. Physical Review B, Vol. 15, Issue 4 https://doi.org/10.1103/PhysRevB.15.2177	journal	February 1977
Investigations on SnS Albers, W.; Haas, C.; Vink, H. J. Journal of Applied Physics, Vol. 32, Issue 10 https://doi.org/10.1063/1.1777047	journal	October 1961
Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy Tian, Zhen; Guo, Chenglei; Zhao, Mingxing ACS Nano, Vol. 11, Issue 2 https://doi.org/10.1021/acsnano.6b08704	journal	February 2017
Valleytronics in 2D materials Schaibley, John R.; Yu, Hongyi; Clark, Genevieve Nature Reviews Materials, Vol. 1, Issue 11 https://doi.org/10.1038/natrevmats.2016.55	journal	August 2016
Nanostructured SnS with inherent anisotropic optical properties for high photoactivity Patel, Malkeshkumar; Chavda, Arvind; Mukhopadhyay, Indrajit Nanoscale, Vol. 8, Issue 4 https://doi.org/10.1039/C5NR06731F	journal	January 2016
Optical Constants of the Noble Metals Johnson, P. B.; Christy, R. W. Physical Review B, Vol. 6, Issue 12, p. 4370-4379 https://doi.org/10.1103/PhysRevB.6.4370	journal	December 1972
Generation, transport and detection of valley-polarized electrons in diamond Isberg, Jan; Gabrysch, Markus; Hammersberg, Johan Nature Materials, Vol. 12, Issue 8 https://doi.org/10.1038/nmat3694	journal	July 2013
Electrons, holes, and spin in the IV-VI monolayer four-six-enes Appelbaum, Ian; Li, Pengke Physical Review B, Vol. 94, Issue 15 https://doi.org/10.1103/PhysRevB.94.155124	journal	October 2016
Interspecimen Comparison of the Refractive Index of Fused Silica*,† Malitson, I. H. Journal of the Optical Society of America, Vol. 55, Issue 10 https://doi.org/10.1364/JOSA.55.001205	journal	January 1965
Control of valley polarization in monolayer MoS2 by optical helicity Mak, Kin Fai; He, Keliang; Shan, Jie Nature Nanotechnology, Vol. 7, Issue 8 https://doi.org/10.1038/nnano.2012.96	journal	June 2012
Temperature dependence of the energy gap in semiconductors Varshni, Y. P. Physica, Vol. 34, Issue 1 https://doi.org/10.1016/0031-8914(67)90062-6	journal	January 1967
Valley polarization in MoS2 monolayers by optical pumping Zeng, Hualing; Dai, Junfeng; Yao, Wang Nature Nanotechnology, Vol. 7, Issue 8 https://doi.org/10.1038/nnano.2012.95	journal	June 2012
Optical properties and electronic structure of amorphous Ge and Si Tauc, J. Materials Research Bulletin, Vol. 3, Issue 1 https://doi.org/10.1016/0025-5408(68)90023-8	journal	January 1968
Efficient pseudopotentials for plane-wave calculations Troullier, N.; Martins, José Luriaas Physical Review B, Vol. 43, Issue 3 https://doi.org/10.1103/PhysRevB.43.1993	journal	January 1991
In-Plane Anisotropies of Polarized Raman Response and Electrical Conductivity in Layered Tin Selenide Xu, Xiaolong; Song, Qingjun; Wang, Haifeng ACS Applied Materials & Interfaces, Vol. 9, Issue 14 https://doi.org/10.1021/acsami.7b00782	journal	March 2017
Anomalously robust valley polarization and valley coherence in bilayer WS2 Zhu, Bairen; Zeng, Hualing; Dai, Junfeng Unpublished https://doi.org/10.13140/2.1.1641.2805	text	January 2014
High-throughput electronic band structure calculations: challenges and tools Setyawan, Wahyu; Curtarolo, Stefano arXiv https://doi.org/10.48550/arxiv.1004.2974	text	January 2010
In-Plane Anisotropies of Polarized Raman Response and Electrical Conductivity in Layered Tin Selenide Xu, Xiaolong; Song, Qingjun; Wang, Haifeng arXiv https://doi.org/10.48550/arxiv.1701.00310	preprint	January 2017
Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field Shkolnikov, Y. P.; De Poortere, E. P.; Tutuc, E. arXiv https://doi.org/10.48550/arxiv.cond-mat/0207431	text	January 2002
Valley susceptibility of an interacting two-dimensional electron system Gunawan, O.; Shkolnikov, Y. P.; Vakili, K. arXiv https://doi.org/10.48550/arxiv.cond-mat/0605692	text	January 2006
Valley filter and valley valve in graphene Rycerz, A.; Tworzydlo, J.; Beenakker, C. W. J. arXiv https://doi.org/10.48550/arxiv.cond-mat/0608533	text	January 2006
Optical properties and electronic structure of amorphous Ge and Si Tauc, J. Materials Research Bulletin, Vol. 3, Issue 1 https://doi.org/10.1016/0025-5408(68)90023-8	journal	January 1968
Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy Tian, Zhen; Guo, Chenglei; Zhao, Mingxing ACS Nano, Vol. 11, Issue 2 https://doi.org/10.1021/acsnano.6b08704	journal	February 2017
Valley polarization in MoS2 monolayers by optical pumping Zeng, Hualing; Dai, Junfeng; Yao, Wang Nature Nanotechnology, Vol. 7, Issue 8 https://doi.org/10.1038/nnano.2012.95	journal	June 2012
Control of valley polarization in monolayer MoS2 by optical helicity Mak, Kin Fai; He, Keliang; Shan, Jie Nature Nanotechnology, Vol. 7, Issue 8 https://doi.org/10.1038/nnano.2012.96	journal	June 2012
Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide Ye, Yu; Xiao, Jun; Wang, Hailong Nature Nanotechnology, Vol. 11, Issue 7 https://doi.org/10.1038/nnano.2016.49	journal	April 2016
Spin and pseudospins in layered transition metal dichalcogenides Xu, Xiaodong; Yao, Wang; Xiao, Di Nature Physics, Vol. 10, Issue 5 https://doi.org/10.1038/nphys2942	journal	April 2014
Investigations on SnS Albers, W.; Haas, C.; Vink, H. J. Journal of Applied Physics, Vol. 32, Issue 10 https://doi.org/10.1063/1.1777047	journal	October 1961
On the Application of Interference Phenomena to the Solution of Various Problems of Spectroscopy and Metrology Perot, A.; Fabry, Charles The Astrophysical Journal, Vol. 9 https://doi.org/10.1086/140557	journal	February 1899
QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola Journal of Physics: Condensed Matter, Vol. 21, Issue 39, Article No. 395502 https://doi.org/10.1088/0953-8984/21/39/395502	journal	September 2009
Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field Shkolnikov, Y. P.; De Poortere, E. P.; Tutuc, E. arXiv https://doi.org/10.48550/arxiv.cond-mat/0207431	text	January 2002
Valley Polarization in Si(100) at Zero Magnetic Field Takashina, K.; Ono, Y.; Fujiwara, A. arXiv https://doi.org/10.48550/arxiv.cond-mat/0604118	text	January 2006
Valley filter and valley valve in graphene Rycerz, A.; Tworzydlo, J.; Beenakker, C. W. J. arXiv https://doi.org/10.48550/arxiv.cond-mat/0608533	text	January 2006

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Water splits to degrade two-dimensional group-IV monochalcogenides in nanoseconds Barraza-Lopez, Salvador; Kaloni, Thaneshwor P. arXiv https://doi.org/10.48550/arxiv.1810.02841	text	January 2018

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