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Title: Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature

Abstract

The field of valleytronics has promised greater control of electronic and spintronic systems with an additional valley degree of freedom. However, conventional and two-dimensional valleytronic systems pose practical challenges in the utilization of this valley degree of freedom. Here we show experimental evidences of the valley effect in a bulk, ambient, and bias-free model system of Tin(II) sulfide. We elucidate the direct access and identification of different sets of valleys, based primarily on the selectivity in absorption and emission of linearly polarized light by optical reflection/transmission and photoluminescence measurements, and demonstrate strong optical dichroic anisotropy of up to 600% and nominal polarization degrees of up to 96% for the two valleys with band-gap values 1.28 and 1.48 eV, respectively; the ease of valley selection further manifested in their non-degenerate nature. Such discovery enables a new platform for better access and control of valley polarization.

Authors:
 [1];  [2];  [3];  [4];  [4];  [2];  [2];  [5];  [4]; ORCiD logo [2];  [1]
  1. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  2. National Univ. of Singapore (Singapore)
  3. Nanjing Univ. of Posts and Telecommunications, Nanjing (People's Republic of China)
  4. Univ. of California, Berkeley, CA (United States)
  5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1460351
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 9; Journal Issue: 1; Related Information: © 2018 The Author(s).; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Lin, Shuren, Carvalho, Alexandra, Yan, Shancheng, Li, Roger, Kim, Sujung, Rodin, Aleksandr, Carvalho, Lidia, Chan, Emory M., Wang, Xi, Castro Neto, Antonio H., and Yao, Jie. Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature. United States: N. p., 2018. Web. doi:10.1038/s41467-018-03897-3.
Lin, Shuren, Carvalho, Alexandra, Yan, Shancheng, Li, Roger, Kim, Sujung, Rodin, Aleksandr, Carvalho, Lidia, Chan, Emory M., Wang, Xi, Castro Neto, Antonio H., & Yao, Jie. Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature. United States. https://doi.org/10.1038/s41467-018-03897-3
Lin, Shuren, Carvalho, Alexandra, Yan, Shancheng, Li, Roger, Kim, Sujung, Rodin, Aleksandr, Carvalho, Lidia, Chan, Emory M., Wang, Xi, Castro Neto, Antonio H., and Yao, Jie. Fri . "Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature". United States. https://doi.org/10.1038/s41467-018-03897-3. https://www.osti.gov/servlets/purl/1460351.
@article{osti_1460351,
title = {Accessing valley degree of freedom in bulk Tin(II) sulfide at room temperature},
author = {Lin, Shuren and Carvalho, Alexandra and Yan, Shancheng and Li, Roger and Kim, Sujung and Rodin, Aleksandr and Carvalho, Lidia and Chan, Emory M. and Wang, Xi and Castro Neto, Antonio H. and Yao, Jie},
abstractNote = {The field of valleytronics has promised greater control of electronic and spintronic systems with an additional valley degree of freedom. However, conventional and two-dimensional valleytronic systems pose practical challenges in the utilization of this valley degree of freedom. Here we show experimental evidences of the valley effect in a bulk, ambient, and bias-free model system of Tin(II) sulfide. We elucidate the direct access and identification of different sets of valleys, based primarily on the selectivity in absorption and emission of linearly polarized light by optical reflection/transmission and photoluminescence measurements, and demonstrate strong optical dichroic anisotropy of up to 600% and nominal polarization degrees of up to 96% for the two valleys with band-gap values 1.28 and 1.48 eV, respectively; the ease of valley selection further manifested in their non-degenerate nature. Such discovery enables a new platform for better access and control of valley polarization.},
doi = {10.1038/s41467-018-03897-3},
journal = {Nature Communications},
number = 1,
volume = 9,
place = {United States},
year = {Fri Apr 13 00:00:00 EDT 2018},
month = {Fri Apr 13 00:00:00 EDT 2018}
}

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Works referenced in this record:

Coupled Spin and Valley Physics in Monolayers of MoS 2 and Other Group-VI Dichalcogenides
journal, May 2012


Polarization and valley switching in monolayer group-IV monochalcogenides
journal, July 2016


Valley filter and valley valve in graphene
journal, February 2007

  • Rycerz, A.; Tworzydło, J.; Beenakker, C. W. J.
  • Nature Physics, Vol. 3, Issue 3, p. 172-175
  • DOI: 10.1038/nphys547

Spin and pseudospins in layered transition metal dichalcogenides
journal, April 2014

  • Xu, Xiaodong; Yao, Wang; Xiao, Di
  • Nature Physics, Vol. 10, Issue 5
  • DOI: 10.1038/nphys2942

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
journal, September 2009

  • Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola
  • Journal of Physics: Condensed Matter, Vol. 21, Issue 39, Article No. 395502
  • DOI: 10.1088/0953-8984/21/39/395502

Phosphorene analogues: Isoelectronic two-dimensional group-IV monochalcogenides with orthorhombic structure
journal, August 2015


Valley Splitting of AlAs Two-Dimensional Electrons in a Perpendicular Magnetic Field
journal, November 2002


Interference-Free Determination of the Optical Absorption Coefficient and the Optical Gap of Amorphous Silicon Thin Films
journal, May 1991

  • Hishikawa, Yoshihiro; Nakamura, Noboru; Tsuda, Shinya
  • Japanese Journal of Applied Physics, Vol. 30, Issue Part 1, No. 5
  • DOI: 10.1143/JJAP.30.1008

Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide
journal, April 2016


Valley-Valley Splitting in Inversion Layers on a High-Index Surface of Silicon
journal, February 1978


Valley Susceptibility of an Interacting Two-Dimensional Electron System
journal, November 2006


Valley Polarization in Si(100) at Zero Magnetic Field
journal, June 2006


Anomalously robust valley polarization and valley coherence in bilayer WS2
journal, July 2014

  • Zhu, B.; Zeng, H.; Dai, J.
  • Proceedings of the National Academy of Sciences, Vol. 111, Issue 32
  • DOI: 10.1073/pnas.1406960111

Valley physics in tin (II) sulfide
journal, January 2016


On the Application of Interference Phenomena to the Solution of Various Problems of Spectroscopy and Metrology
journal, February 1899

  • Perot, A.; Fabry, Charles
  • The Astrophysical Journal, Vol. 9
  • DOI: 10.1086/140557

High-throughput electronic band structure calculations: Challenges and tools
journal, August 2010


Infrared and Raman spectra of the IV-VI compounds SnS and SnSe
journal, February 1977


Investigations on SnS
journal, October 1961

  • Albers, W.; Haas, C.; Vink, H. J.
  • Journal of Applied Physics, Vol. 32, Issue 10
  • DOI: 10.1063/1.1777047

Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy
journal, February 2017


Valleytronics in 2D materials
journal, August 2016


Nanostructured SnS with inherent anisotropic optical properties for high photoactivity
journal, January 2016

  • Patel, Malkeshkumar; Chavda, Arvind; Mukhopadhyay, Indrajit
  • Nanoscale, Vol. 8, Issue 4
  • DOI: 10.1039/C5NR06731F

Optical Constants of the Noble Metals
journal, December 1972


Generation, transport and detection of valley-polarized electrons in diamond
journal, July 2013

  • Isberg, Jan; Gabrysch, Markus; Hammersberg, Johan
  • Nature Materials, Vol. 12, Issue 8
  • DOI: 10.1038/nmat3694

Electrons, holes, and spin in the IV-VI monolayer four-six-enes
journal, October 2016


Interspecimen Comparison of the Refractive Index of Fused Silica*,†
journal, January 1965


Control of valley polarization in monolayer MoS2 by optical helicity
journal, June 2012


Temperature dependence of the energy gap in semiconductors
journal, January 1967


Valley polarization in MoS2 monolayers by optical pumping
journal, June 2012

  • Zeng, Hualing; Dai, Junfeng; Yao, Wang
  • Nature Nanotechnology, Vol. 7, Issue 8
  • DOI: 10.1038/nnano.2012.95

Optical properties and electronic structure of amorphous Ge and Si
journal, January 1968


Efficient pseudopotentials for plane-wave calculations
journal, January 1991


In-Plane Anisotropies of Polarized Raman Response and Electrical Conductivity in Layered Tin Selenide
journal, March 2017

  • Xu, Xiaolong; Song, Qingjun; Wang, Haifeng
  • ACS Applied Materials & Interfaces, Vol. 9, Issue 14
  • DOI: 10.1021/acsami.7b00782

Anomalously robust valley polarization and valley coherence in bilayer WS2
text, January 2014


High-throughput electronic band structure calculations: challenges and tools
text, January 2010


Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field
text, January 2002


Valley susceptibility of an interacting two-dimensional electron system
text, January 2006


Valley filter and valley valve in graphene
text, January 2006


Optical properties and electronic structure of amorphous Ge and Si
journal, January 1968


Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy
journal, February 2017


Valley polarization in MoS2 monolayers by optical pumping
journal, June 2012

  • Zeng, Hualing; Dai, Junfeng; Yao, Wang
  • Nature Nanotechnology, Vol. 7, Issue 8
  • DOI: 10.1038/nnano.2012.95

Control of valley polarization in monolayer MoS2 by optical helicity
journal, June 2012


Electrical generation and control of the valley carriers in a monolayer transition metal dichalcogenide
journal, April 2016


Spin and pseudospins in layered transition metal dichalcogenides
journal, April 2014

  • Xu, Xiaodong; Yao, Wang; Xiao, Di
  • Nature Physics, Vol. 10, Issue 5
  • DOI: 10.1038/nphys2942

Investigations on SnS
journal, October 1961

  • Albers, W.; Haas, C.; Vink, H. J.
  • Journal of Applied Physics, Vol. 32, Issue 10
  • DOI: 10.1063/1.1777047

On the Application of Interference Phenomena to the Solution of Various Problems of Spectroscopy and Metrology
journal, February 1899

  • Perot, A.; Fabry, Charles
  • The Astrophysical Journal, Vol. 9
  • DOI: 10.1086/140557

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
journal, September 2009

  • Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola
  • Journal of Physics: Condensed Matter, Vol. 21, Issue 39, Article No. 395502
  • DOI: 10.1088/0953-8984/21/39/395502

Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field
text, January 2002


Valley Polarization in Si(100) at Zero Magnetic Field
text, January 2006


Valley filter and valley valve in graphene
text, January 2006


Works referencing / citing this record:

Growth of Large-Area SnS Films with Oriented 2D SnS Layers for Energy-Efficient Broadband Optoelectronics
journal, August 2018

  • Patel, Malkeshkumar; Kim, Joondong; Kim, Yu Kwon
  • Advanced Functional Materials, Vol. 28, Issue 40
  • DOI: 10.1002/adfm.201804737

Wrap‐Around Core–Shell Heterostructures of Layered Crystals
journal, May 2019


Liquid exfoliation of electronic grade ultrathin tin(II) sulfide (SnS) with intriguing optical response
journal, January 2020

  • Sarkar, Abdus Salam; Mushtaq, Aamir; Kushavah, Dushyant
  • npj 2D Materials and Applications, Vol. 4, Issue 1
  • DOI: 10.1038/s41699-019-0135-1

Colloidal tin sulfide nanosheets: formation mechanism, ligand-mediated shape tuning and photo-detection
journal, January 2018

  • Li, Fu; Ramin Moayed, Mohammad Mehdi; Gerdes, Frauke
  • Journal of Materials Chemistry C, Vol. 6, Issue 35
  • DOI: 10.1039/c8tc02559b

In-plane anisotropic electronics based on low-symmetry 2D materials: progress and prospects
journal, January 2020

  • Zhao, Siwen; Dong, Baojuan; Wang, Huide
  • Nanoscale Advances, Vol. 2, Issue 1
  • DOI: 10.1039/c9na00623k

Phonon band gaps in the IV-VI monochalcogenides
journal, August 2019


Quantum confinement-induced enhanced nonlinearity and carrier lifetime modulation in two-dimensional tin sulfide
journal, January 2020


Production of SnS2 Nanostructure as Improved Light-Assisted Electrochemical Water Splitting
journal, September 2019


Colloidal Tin Sulfide Nanosheets: Formation Mechanism, Ligand-mediated Shape Tuning and Photo-detection
text, January 2018


Water splits to degrade two-dimensional group-IV monochalcogenides in nanoseconds
text, January 2018