skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Ambipolar ferromagnetism by electrostatic doping of a manganite

Abstract

Complex-oxide materials exhibit physical properties that involve the interplay of charge and spin degrees of freedom. However, an ambipolar oxide that is able to exhibit both electron-doped and hole-doped ferromagnetism in the same material has proved elusive. Here we report ambipolar ferromagnetism in LaMnO 3, with electron-hole asymmetry of the ferromagnetic order. Starting from an undoped atomically thin LaMnO 3 film, we electrostatically dope the material with electrons or holes according to the polarity of a voltage applied across an ionic liquid gate. Magnetotransport characterization reveals that an increase of either electron-doping or hole-doping induced ferromagnetic order in this antiferromagnetic compound, and leads to an insulator-to-metal transition with colossal magnetoresistance showing electron-hole asymmetry. These findings are supported by density functional theory calculations, showing that strengthening of the inter-plane ferromagnetic exchange interaction is the origin of the ambipolar ferromagnetism. The result raises the prospect of exploiting ambipolar magnetic functionality in strongly correlated electron systems.

Authors:
 [1];  [2];  [1];  [3];  [4]; ORCiD logo [5];  [3];  [3];  [3];  [6]; ORCiD logo [7];  [3]; ORCiD logo [8];  [1];  [8]; ORCiD logo [9];  [3];  [4]; ORCiD logo [10];  [11]
  1. Harbin Inst. of Technology, Harbin (China)
  2. Nanyang Technological Univ. (Singapore)
  3. National Univ. of Singapore (Singapore)
  4. Univ. of Nebraska, Lincoln, NE (United States)
  5. Beihang Univ., Beijing (China)
  6. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Harbin Inst. of Technology, Guangzhou (China)
  7. Tongji Univ., Shanghai (China)
  8. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  9. Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  10. Trinity College, Dublin (Ireland); Beihang Univ., Beijing (China)
  11. Harbin Inst. of Technology, Harbin (China); The Pennsylvania State Univ., University Park, PA (United States)
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1460348
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 9; Journal Issue: 1; Related Information: © 2018 The Author(s).; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Zheng, L. M., Wang, X. Renshaw, Lu, W. M., Li, C. J., Paudel, T. R., Liu, Z. Q., Huang, Z., Zeng, S. W., Han, Kun, Chen, Z. H., Qiu, X. P., Li, M. S., Yang, Shize, Yang, B., Chisholm, Matthew F., Martin, L. W., Pennycook, S. J., Tsymbal, E. Y., Coey, J. M. D., and Cao, W. W. Ambipolar ferromagnetism by electrostatic doping of a manganite. United States: N. p., 2018. Web. doi:10.1038/s41467-018-04233-5.
Zheng, L. M., Wang, X. Renshaw, Lu, W. M., Li, C. J., Paudel, T. R., Liu, Z. Q., Huang, Z., Zeng, S. W., Han, Kun, Chen, Z. H., Qiu, X. P., Li, M. S., Yang, Shize, Yang, B., Chisholm, Matthew F., Martin, L. W., Pennycook, S. J., Tsymbal, E. Y., Coey, J. M. D., & Cao, W. W. Ambipolar ferromagnetism by electrostatic doping of a manganite. United States. doi:10.1038/s41467-018-04233-5.
Zheng, L. M., Wang, X. Renshaw, Lu, W. M., Li, C. J., Paudel, T. R., Liu, Z. Q., Huang, Z., Zeng, S. W., Han, Kun, Chen, Z. H., Qiu, X. P., Li, M. S., Yang, Shize, Yang, B., Chisholm, Matthew F., Martin, L. W., Pennycook, S. J., Tsymbal, E. Y., Coey, J. M. D., and Cao, W. W. Tue . "Ambipolar ferromagnetism by electrostatic doping of a manganite". United States. doi:10.1038/s41467-018-04233-5. https://www.osti.gov/servlets/purl/1460348.
@article{osti_1460348,
title = {Ambipolar ferromagnetism by electrostatic doping of a manganite},
author = {Zheng, L. M. and Wang, X. Renshaw and Lu, W. M. and Li, C. J. and Paudel, T. R. and Liu, Z. Q. and Huang, Z. and Zeng, S. W. and Han, Kun and Chen, Z. H. and Qiu, X. P. and Li, M. S. and Yang, Shize and Yang, B. and Chisholm, Matthew F. and Martin, L. W. and Pennycook, S. J. and Tsymbal, E. Y. and Coey, J. M. D. and Cao, W. W.},
abstractNote = {Complex-oxide materials exhibit physical properties that involve the interplay of charge and spin degrees of freedom. However, an ambipolar oxide that is able to exhibit both electron-doped and hole-doped ferromagnetism in the same material has proved elusive. Here we report ambipolar ferromagnetism in LaMnO3, with electron-hole asymmetry of the ferromagnetic order. Starting from an undoped atomically thin LaMnO3 film, we electrostatically dope the material with electrons or holes according to the polarity of a voltage applied across an ionic liquid gate. Magnetotransport characterization reveals that an increase of either electron-doping or hole-doping induced ferromagnetic order in this antiferromagnetic compound, and leads to an insulator-to-metal transition with colossal magnetoresistance showing electron-hole asymmetry. These findings are supported by density functional theory calculations, showing that strengthening of the inter-plane ferromagnetic exchange interaction is the origin of the ambipolar ferromagnetism. The result raises the prospect of exploiting ambipolar magnetic functionality in strongly correlated electron systems.},
doi = {10.1038/s41467-018-04233-5},
journal = {Nature Communications},
number = 1,
volume = 9,
place = {United States},
year = {2018},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record

Citation Metrics:
Cited by: 6 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

Electric field tuning of phase separation in manganite thin films
journal, January 2014


Phase diagram and Hall effect of the electron doped manganite La1−xCexMnO3
journal, May 2003

  • Raychaudhuri, P.; Mitra, C.; Mann, P. D. A.
  • Journal of Applied Physics, Vol. 93, Issue 10
  • DOI: 10.1063/1.1556976

Magnetically induced ferroelectricity in orthorhombic manganites: Microscopic origin and chemical trends
journal, July 2008


Phase diagram and spin-canting effects in electron-doped La Mn O 3
journal, March 2008


Liquid-gated interface superconductivity on an atomically flat film
journal, November 2009

  • Ye, J. T.; Inoue, S.; Kobayashi, K.
  • Nature Materials, Vol. 9, Issue 2
  • DOI: 10.1038/nmat2587

Hall effect of quinquevalent ion-doped La0.9Sb0.1MnO3 film
journal, March 2013


Metallic ground state in an ion-gated two-dimensional superconductor
journal, October 2015


Evidence for two-dimensional Ising superconductivity in gated MoS2
journal, November 2015


Gate-induced superconductivity in atomically thin MoS2 crystals
journal, January 2016

  • Costanzo, Davide; Jo, Sanghyun; Berger, Helmuth
  • Nature Nanotechnology, Vol. 11, Issue 4
  • DOI: 10.1038/nnano.2015.314

Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene
journal, August 2007


Recent progress in voltage control of magnetism: Materials, mechanisms, and performance
journal, June 2017


Sign inversion of the high-field Hall slope in epitaxial La 0.5 Ca 0.5 MnO 3 thin films
journal, October 2003


Hall effect in heavy fermion metals
journal, October 2012


Imaging and control of ferromagnetism in LaMnO3/SrTiO3 heterostructures
journal, August 2015


Collective bulk carrier delocalization driven by electrostatic surface charge accumulation
journal, July 2012


Transport, magnetic, and structural properties of La 0.7 Ce 0.3 MnO 3 thin films: Evidence for hole-doping
journal, February 2009


Solution-processed ambipolar organic field-effect transistors and inverters
journal, September 2003

  • Meijer, E. J.; de Leeuw, D. M.; Setayesh, S.
  • Nature Materials, Vol. 2, Issue 10
  • DOI: 10.1038/nmat978

Suppression of Metal-Insulator Transition in VO2 by Electric Field-Induced Oxygen Vacancy Formation
journal, March 2013


Discovery of superconductivity in KTaO3 by electrostatic carrier doping
journal, May 2011

  • Ueno, K.; Nakamura, S.; Shimotani, H.
  • Nature Nanotechnology, Vol. 6, Issue 7
  • DOI: 10.1038/nnano.2011.78

Crucial Role of the Lattice Distortion in the Magnetism of LaMnO 3
journal, June 1996


Superconducting Dome in a Gate-Tuned Band Insulator
journal, November 2012


Electric-field-induced superconductivity in electrochemically etched ultrathin FeSe films on SrTiO3 and MgO
journal, November 2015

  • Shiogai, J.; Ito, Y.; Mitsuhashi, T.
  • Nature Physics, Vol. 12, Issue 1
  • DOI: 10.1038/nphys3530

Superconductor–insulator transition in La2 − xSr x CuO4 at the pair quantum resistance
journal, April 2011


Surface magnetism of strontium titanate
journal, September 2016


Hall effect in the perovskite manganites
journal, February 1999

  • Majumdar, Pinaki; Simon, Steven H.; Sengupta, Anirvan M.
  • Physical Review B, Vol. 59, Issue 7
  • DOI: 10.1103/PhysRevB.59.4746

Lattice effects in magnetoresistive manganese perovskites
journal, March 1998


The physics of manganites: Structure and transport
journal, August 2001


Charge transport in manganites: Hopping conduction, the anomalous Hall effect, and universal scaling
journal, April 2001


Reversible Ferromagnetic Phase Transition in Electrode-Gated Manganites
journal, September 2014

  • Cui, Bin; Song, Cheng; Wang, Guangyue
  • Advanced Functional Materials, Vol. 24, Issue 46
  • DOI: 10.1002/adfm.201402007

Electric-field-induced superconductivity in an insulator
journal, October 2008

  • Ueno, K.; Nakamura, S.; Shimotani, H.
  • Nature Materials, Vol. 7, Issue 11, p. 855-858
  • DOI: 10.1038/nmat2298

Restoring the magnetism of ultrathin LaMn O 3 films by surface symmetry engineering
journal, December 2016


Large Electric Field Effect in Electrolyte-Gated Manganites
journal, March 2009


Mixed-valence manganites
journal, March 1999


Gate Control of Electronic Phases in a Quarter-Filled Manganite
journal, October 2013

  • Hatano, T.; Ogimoto, Y.; Ogawa, N.
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep02904

Hall effect in La 0.7 Ce 0.3 MnO 3 + δ films with variable oxygen content
journal, April 2006


Transport properties of Ce-doped R MnO 3 ( R =La, Pr, and Nd) manganites
journal, December 1997


Hall effect of La 2 / 3 ( C a , P b ) 1 / 3 MnO 3 single crystals near the critical temperature
journal, May 1999


Correlated electrons in manganites
journal, July 2000


Black phosphorus field-effect transistors
journal, March 2014


Ambipolar MoS 2 Thin Flake Transistors
journal, February 2012

  • Zhang, Yijin; Ye, Jianting; Matsuhashi, Yusuke
  • Nano Letters, Vol. 12, Issue 3
  • DOI: 10.1021/nl2021575

Electrostatic Gating of Ultrathin Films
journal, July 2014


Anomalous Lattice Softening at X =0.19 and 0.82 in La 1- X Ca X MnO 3
journal, March 2001

  • Fujishiro, Hiroyuki; Fukase, Tetsuo; Ikebe, Manabu
  • Journal of the Physical Society of Japan, Vol. 70, Issue 3
  • DOI: 10.1143/JPSJ.70.628

Colossal magnetoresistance behavior and ESR studies of La 1 x Te x MnO 3 ( 0.04 <~ x <~ 0 . 2 )
journal, July 2003


Anomalous Hall effect
journal, May 2010


Ambipolar Insulator-to-Metal Transition in Black Phosphorus by Ionic-Liquid Gating
journal, February 2015


Controlling many-body states by the electric-field effect in a two-dimensional material
journal, December 2015

  • Li, L. J.; O’Farrell, E. C. T.; Loh, K. P.
  • Nature, Vol. 529, Issue 7585
  • DOI: 10.1038/nature16175

    Works referencing / citing this record:

    Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites
    journal, February 2019


    Conductive Oxide Interfaces for Field Effect Devices
    journal, June 2019


    Voltage‐Control of Magnetism in All‐Solid‐State and Solid/Liquid Magnetoelectric Composites
    journal, February 2019


    Conductive Oxide Interfaces for Field Effect Devices
    journal, June 2019