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Title: A novel quasi-one-dimensional topological insulator in bismuth iodide β-Bi 4I 4

Abstract

Recent progress in the field of topological states of matter has largely been initiated by the discovery of bismuth and antimony chalcogenide bulk topological insulators, followed by closely related ternary compounds and predictions of several weak TIs. However, both the conceptual richness of Z 2 classification of TIs as well as their structural and compositional diversity are far from being fully exploited. In this paper, a new Z 2 topological insulator is theoretically predicted and experimentally confirmed in the β-phase of quasi-one-dimensional bismuth iodide Bi 4I 4. The electronic structure of β-Bi 4I 4, characterized by Z 2 invariants (1;110), is in proximity of both the weak TI phase (0;001) and the trivial insulator phase (0;000). Finally, our angle-resolved photoemission spectroscopy measurements performed on the (001) surface reveal a highly anisotropic band-crossing feature located at the point of the surface Brillouin zone and showing no dispersion with the photon energy, thus being fully consistent with the theoretical prediction.

Authors:
ORCiD logo [1];  [2];  [3];  [4];  [4];  [5];  [6];  [7];  [7];  [4];  [8];  [9];  [10];  [6];  [3];  [3];  [3];  [4]; ORCiD logo [1]
  1. Swiss Federal Inst. of Technology in Lausanne (EPFL) (Switzlerland). Inst. of Theoretical Physics. National Center for Computational Design and Discovery of Novel Materials MARVEL
  2. TU Dresden (Germany). Dept. of Chemistry and Food Chemistry
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
  4. Swiss Federal Inst. of Technology in Lausanne (EPFL) (Switzlerland). Inst. of Condensed Matter Physics
  5. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Univ. of California, Berkeley, CA (United States). Graduate Group in Applied Science and Technology
  6. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Univ. of California, Berkeley, CA (United States). Dept. of Physics
  7. Lomonosov Moscow State Univ., Moscow (Russian Federation). Dept. of Chemistry
  8. Ulm Univ. (Germany). Experimental Physics
  9. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Yonsei Univ., Seoul (Korea, Republic of). Inst. of Physics and Applied Physics
  10. Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of). Dept. of Physics; Inst. for Basic Science, Pohang (Korea, Republic of). Center for Artificial Low Dimensional Electronic Systems
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Swiss Federal Inst. of Technology in Lausanne (EPFL) (Switzlerland); TU Dresden (Germany)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); Swiss National Science Foundation (SNSF); European Research Council (ERC); German Research Foundation (DFG); Carl Zeiss Foundation (Germany)
OSTI Identifier:
1460290
Grant/Contract Number:  
AC02-05CH11231; PP00P2_133552; PA00P21-36420; 306504; IS 250/1-1
Resource Type:
Accepted Manuscript
Journal Name:
Nature Materials
Additional Journal Information:
Journal Volume: 15; Journal Issue: 2; Journal ID: ISSN 1476-1122
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; electronic properties and materials; surfaces, interfaces and thin films; topological matter

Citation Formats

Autes, Gabriel, Isaeva, Anna, Moreschini, Luca, Johannsen, Jens C., Pisoni, Andrea, Mori, Ryo, Zhang, Wentao, Filatova, Taisia G., Kuznetsov, Alexey N., Forro, Laszlo, Van den Broek, Wouter, Kim, Yeongkwan, Kim, Keun Su, Lanzara, Alessandra, Denlinger, Jonathan D., Rotenberg, Eli, Bostwick, Aaron, Grioni, Marco, and Yazyev, Oleg V. A novel quasi-one-dimensional topological insulator in bismuth iodide β-Bi4I4. United States: N. p., 2015. Web. doi:10.1038/nmat4488.
Autes, Gabriel, Isaeva, Anna, Moreschini, Luca, Johannsen, Jens C., Pisoni, Andrea, Mori, Ryo, Zhang, Wentao, Filatova, Taisia G., Kuznetsov, Alexey N., Forro, Laszlo, Van den Broek, Wouter, Kim, Yeongkwan, Kim, Keun Su, Lanzara, Alessandra, Denlinger, Jonathan D., Rotenberg, Eli, Bostwick, Aaron, Grioni, Marco, & Yazyev, Oleg V. A novel quasi-one-dimensional topological insulator in bismuth iodide β-Bi4I4. United States. doi:10.1038/nmat4488.
Autes, Gabriel, Isaeva, Anna, Moreschini, Luca, Johannsen, Jens C., Pisoni, Andrea, Mori, Ryo, Zhang, Wentao, Filatova, Taisia G., Kuznetsov, Alexey N., Forro, Laszlo, Van den Broek, Wouter, Kim, Yeongkwan, Kim, Keun Su, Lanzara, Alessandra, Denlinger, Jonathan D., Rotenberg, Eli, Bostwick, Aaron, Grioni, Marco, and Yazyev, Oleg V. Mon . "A novel quasi-one-dimensional topological insulator in bismuth iodide β-Bi4I4". United States. doi:10.1038/nmat4488. https://www.osti.gov/servlets/purl/1460290.
@article{osti_1460290,
title = {A novel quasi-one-dimensional topological insulator in bismuth iodide β-Bi4I4},
author = {Autes, Gabriel and Isaeva, Anna and Moreschini, Luca and Johannsen, Jens C. and Pisoni, Andrea and Mori, Ryo and Zhang, Wentao and Filatova, Taisia G. and Kuznetsov, Alexey N. and Forro, Laszlo and Van den Broek, Wouter and Kim, Yeongkwan and Kim, Keun Su and Lanzara, Alessandra and Denlinger, Jonathan D. and Rotenberg, Eli and Bostwick, Aaron and Grioni, Marco and Yazyev, Oleg V.},
abstractNote = {Recent progress in the field of topological states of matter has largely been initiated by the discovery of bismuth and antimony chalcogenide bulk topological insulators, followed by closely related ternary compounds and predictions of several weak TIs. However, both the conceptual richness of Z2 classification of TIs as well as their structural and compositional diversity are far from being fully exploited. In this paper, a new Z2 topological insulator is theoretically predicted and experimentally confirmed in the β-phase of quasi-one-dimensional bismuth iodide Bi4I4. The electronic structure of β-Bi4I4, characterized by Z2 invariants (1;110), is in proximity of both the weak TI phase (0;001) and the trivial insulator phase (0;000). Finally, our angle-resolved photoemission spectroscopy measurements performed on the (001) surface reveal a highly anisotropic band-crossing feature located at the M¯ point of the surface Brillouin zone and showing no dispersion with the photon energy, thus being fully consistent with the theoretical prediction.},
doi = {10.1038/nmat4488},
journal = {Nature Materials},
number = 2,
volume = 15,
place = {United States},
year = {2015},
month = {12}
}

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