skip to main content

DOE PAGESDOE PAGES

Title: Evaluation of GaAsSb/AlGaAs strained superlattice photocathodes

GaAs-class strained superlattice (SSL) photocathodes can provide electron beams with electron spin polarization (ESP) exceeding the theoretical maximum 50% of bulk GaAs. In this paper, we describe the evaluation of a strained superlattice structure composed of GaAsSb/AlGaAs and grown on a GaAs substrate. Theoretical analysis and numerical calculations show GaAsSb/AlGaAs SSL structures have the largest heavy-hole and light-hole energy splitting of all existing GaAs-class SSL structures, which should lead to the highest initial ESP. Five GaAsSb/AlGaAs SSL photocathode samples with different constituent species concentrations, number of layer pairs, and layer thicknesses were fabricated and evaluated. Here, the highest ESP was ~ 77% obtained from a photocathode based on the GaAsSb 0.15/Al 0.38GaAs (1.55/4.1nm ×15 layer pairs) SSL structure.
Authors:
 [1] ;  [2] ;  [2] ;  [3] ;  [3] ; ORCiD logo [3]
  1. Chinese Academy of Sciences, Lanzhou (China); Univ. of Chinese Academy of Sciences, Beijing (China); Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
  2. SVT Associates, Inc., Eden Prairie, MN (United States)
  3. Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
Publication Date:
Report Number(s):
JLAB-ACC-18-2717; DOE/OR/23177-4440
Journal ID: ISSN 2158-3226
Grant/Contract Number:
AC05-06OR23177; SC0009516
Type:
Accepted Manuscript
Journal Name:
AIP Advances
Additional Journal Information:
Journal Volume: 8; Journal Issue: 7; Journal ID: ISSN 2158-3226
Publisher:
American Institute of Physics (AIP)
Research Org:
Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Nuclear Physics (NP) (SC-26)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
OSTI Identifier:
1460083
Alternate Identifier(s):
OSTI ID: 1459737

Liu, Wei, Chen, Yiqiao, Moy, Aaron, Poelker, Matthew, Stutzman, Marcy, and Zhang, Shukui. Evaluation of GaAsSb/AlGaAs strained superlattice photocathodes. United States: N. p., Web. doi:10.1063/1.5040593.
Liu, Wei, Chen, Yiqiao, Moy, Aaron, Poelker, Matthew, Stutzman, Marcy, & Zhang, Shukui. Evaluation of GaAsSb/AlGaAs strained superlattice photocathodes. United States. doi:10.1063/1.5040593.
Liu, Wei, Chen, Yiqiao, Moy, Aaron, Poelker, Matthew, Stutzman, Marcy, and Zhang, Shukui. 2018. "Evaluation of GaAsSb/AlGaAs strained superlattice photocathodes". United States. doi:10.1063/1.5040593. https://www.osti.gov/servlets/purl/1460083.
@article{osti_1460083,
title = {Evaluation of GaAsSb/AlGaAs strained superlattice photocathodes},
author = {Liu, Wei and Chen, Yiqiao and Moy, Aaron and Poelker, Matthew and Stutzman, Marcy and Zhang, Shukui},
abstractNote = {GaAs-class strained superlattice (SSL) photocathodes can provide electron beams with electron spin polarization (ESP) exceeding the theoretical maximum 50% of bulk GaAs. In this paper, we describe the evaluation of a strained superlattice structure composed of GaAsSb/AlGaAs and grown on a GaAs substrate. Theoretical analysis and numerical calculations show GaAsSb/AlGaAs SSL structures have the largest heavy-hole and light-hole energy splitting of all existing GaAs-class SSL structures, which should lead to the highest initial ESP. Five GaAsSb/AlGaAs SSL photocathode samples with different constituent species concentrations, number of layer pairs, and layer thicknesses were fabricated and evaluated. Here, the highest ESP was ~ 77% obtained from a photocathode based on the GaAsSb0.15/Al0.38GaAs (1.55/4.1nm ×15 layer pairs) SSL structure.},
doi = {10.1063/1.5040593},
journal = {AIP Advances},
number = 7,
volume = 8,
place = {United States},
year = {2018},
month = {7}
}

Works referenced in this record:

Band parameters for III–V compound semiconductors and their alloys
journal, June 2001
  • Vurgaftman, I.; Meyer, J. R.; Ram-Mohan, L. R.
  • Journal of Applied Physics, Vol. 89, Issue 11, p. 5815-5875
  • DOI: 10.1063/1.1368156