skip to main content

DOE PAGESDOE PAGES

This content will become publicly available on June 22, 2019

Title: Perfect Strain Relaxation in Metamorphic Epitaxial Aluminum on Silicon through Primary and Secondary Interface Misfit Dislocation Arrays

Understanding the atomically precise arrangement of atoms at epitaxial interfaces is important for emerging technologies such as quantum materials that have function and performance dictated by bonds and defects that are energetically active on the micro-electronvolt scale. A combination of atomistic modeling and dislocation theory analysis describes both primary and secondary dislocation networks at the metamorphic Al/Si (111) interface, which is experimentally validated by atomic resolution scanning transmission electron microscopy. The electron microscopy images show primary misfit dislocations for the majority of the strain relief and evidence of a secondary structure allowing for complete relaxation of the Al–Si misfit strain. Finally, this study demonstrates the equilibrium interface that represents the lowest energy structure of a highly mismatched and semicoherent single-crystal interface with complete strain relief in an atomically abrupt structure.
Authors:
 [1] ;  [2] ;  [2] ;  [3] ; ORCiD logo [4] ; ORCiD logo [3]
  1. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  2. Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical Sciences Division
  3. Univ. of Maryland, College Park, MD (United States). Lab. for Physical Sciences
  4. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States). Materials Science Division
Publication Date:
Report Number(s):
LA-UR-17-31321; PNNL-SA-130724
Journal ID: ISSN 1936-0851
Grant/Contract Number:
AC52-06NA25396; AC05-76RL01830; AC52-07NA27344; AC02-06CH11357
Type:
Accepted Manuscript
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 12; Journal Issue: 7; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Research Org:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org:
USDOE Office of Science (SC)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; aluminum; bicrystal; interface; metamorphic; molecular beam epitaxy; molecular dynamic simulation; semicoherent; silicon
OSTI Identifier:
1459823
Alternate Identifier(s):
OSTI ID: 1475459

Liu, Xiang-Yang, Arslan, Ilke, Arey, Bruce W., Hackley, Justin, Lordi, Vincenzo, and Richardson, Christopher J. K.. Perfect Strain Relaxation in Metamorphic Epitaxial Aluminum on Silicon through Primary and Secondary Interface Misfit Dislocation Arrays. United States: N. p., Web. doi:10.1021/acsnano.8b02065.
Liu, Xiang-Yang, Arslan, Ilke, Arey, Bruce W., Hackley, Justin, Lordi, Vincenzo, & Richardson, Christopher J. K.. Perfect Strain Relaxation in Metamorphic Epitaxial Aluminum on Silicon through Primary and Secondary Interface Misfit Dislocation Arrays. United States. doi:10.1021/acsnano.8b02065.
Liu, Xiang-Yang, Arslan, Ilke, Arey, Bruce W., Hackley, Justin, Lordi, Vincenzo, and Richardson, Christopher J. K.. 2018. "Perfect Strain Relaxation in Metamorphic Epitaxial Aluminum on Silicon through Primary and Secondary Interface Misfit Dislocation Arrays". United States. doi:10.1021/acsnano.8b02065.
@article{osti_1459823,
title = {Perfect Strain Relaxation in Metamorphic Epitaxial Aluminum on Silicon through Primary and Secondary Interface Misfit Dislocation Arrays},
author = {Liu, Xiang-Yang and Arslan, Ilke and Arey, Bruce W. and Hackley, Justin and Lordi, Vincenzo and Richardson, Christopher J. K.},
abstractNote = {Understanding the atomically precise arrangement of atoms at epitaxial interfaces is important for emerging technologies such as quantum materials that have function and performance dictated by bonds and defects that are energetically active on the micro-electronvolt scale. A combination of atomistic modeling and dislocation theory analysis describes both primary and secondary dislocation networks at the metamorphic Al/Si (111) interface, which is experimentally validated by atomic resolution scanning transmission electron microscopy. The electron microscopy images show primary misfit dislocations for the majority of the strain relief and evidence of a secondary structure allowing for complete relaxation of the Al–Si misfit strain. Finally, this study demonstrates the equilibrium interface that represents the lowest energy structure of a highly mismatched and semicoherent single-crystal interface with complete strain relief in an atomically abrupt structure.},
doi = {10.1021/acsnano.8b02065},
journal = {ACS Nano},
number = 7,
volume = 12,
place = {United States},
year = {2018},
month = {6}
}