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Title: High voltage, high current GaN-on-GaN p-n diodes with partially compensated edge termination

Authors:
ORCiD logo [1] ; ORCiD logo [1] ;  [2] ;  [2] ;  [3] ;  [3] ; ORCiD logo [1]
  1. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, USA
  2. Qorvo, Inc., 500 West Renner Road, Richardson, Texas 75080, USA
  3. MicroLink Devices, 6457 West Howard Street, Niles, Illinois 60714, USA
Publication Date:
Grant/Contract Number:
AR0000446
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 113; Journal Issue: 2; Related Information: CHORUS Timestamp: 2018-07-10 10:48:12; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1459691