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Title: Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability

Authors:
; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1459477
Grant/Contract Number:  
AR0000672
Resource Type:
Published Article
Journal Name:
Photonics Research
Additional Journal Information:
Journal Name: Photonics Research Journal Volume: 6 Journal Issue: 8; Journal ID: ISSN 2327-9125
Publisher:
Optical Society of America
Country of Publication:
United States
Language:
English

Citation Formats

Wan, Yating, Inoue, Daisuke, Jung, Daehwan, Norman, Justin C., Shang, Chen, Gossard, Arthur C., and Bowers, John E. Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability. United States: N. p., 2018. Web. doi:10.1364/PRJ.6.000776.
Wan, Yating, Inoue, Daisuke, Jung, Daehwan, Norman, Justin C., Shang, Chen, Gossard, Arthur C., & Bowers, John E. Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability. United States. doi:https://doi.org/10.1364/PRJ.6.000776
Wan, Yating, Inoue, Daisuke, Jung, Daehwan, Norman, Justin C., Shang, Chen, Gossard, Arthur C., and Bowers, John E. Tue . "Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability". United States. doi:https://doi.org/10.1364/PRJ.6.000776.
@article{osti_1459477,
title = {Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability},
author = {Wan, Yating and Inoue, Daisuke and Jung, Daehwan and Norman, Justin C. and Shang, Chen and Gossard, Arthur C. and Bowers, John E.},
abstractNote = {},
doi = {10.1364/PRJ.6.000776},
journal = {Photonics Research},
number = 8,
volume = 6,
place = {United States},
year = {2018},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: https://doi.org/10.1364/PRJ.6.000776

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Cited by: 10 works
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