Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures

Zhang, Limin; Jiang, Weilin; Ai, Wensi; Chen, Liang; Pan, Chenlong; Wang, Tieshan

doi:10.1111/jace.15895

Title: Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures

Journal Article · 05 July 2018 · Journal of the American Ceramic Society

DOI: https://doi.org/10.1111/jace.15895 · OSTI ID:1459040

^[1]; Jiang, Weilin ^[2]; Ai, Wensi ^[1]; Chen, Liang ^[1]; Pan, Chenlong ^[1]; Wang, Tieshan ^[1]

School of Nuclear Science and Technology Lanzhou University Lanzhou Gansu China
Pacific Northwest National Laboratory Richland Washington

Abstract This study reports on ion irradiation‐induced grain size variations in nanocrystalline SiC films on Si substrates. The SiC grains with average size ranging from ~2 to 20 nm were embedded in amorphous SiC matrices. Irradiation was performed using 5 MeV Xe ²³⁺ ions to 1.15 × 10 ¹⁶ ions/cm ² at 700 K. The irradiated films were characterized using X‐ray diffraction, transmission electron microscopy, and Raman spectroscopy. Significant grain growth is observed for smaller grains that tend to saturate at ~8 nm. In contrast, irradiation of larger grains (~20 nm in size) leads to a decrease in the grain size, which could be associated with the production of lattice disorder within the grains. Homonuclear C‐C bonds in the irradiated amorphous SiC matrix are found to be graphitized. This bonding transformation could limit or inhibit grain growth and contribute to the size saturation. The results from this study may suggest nanocrystalline SiC as a promising candidate structural or cladding material for applications in advanced nuclear reactors.

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Sponsoring Organization:: USDOE

Grant/Contract Number:: DE‐AC05‐76RL01830

OSTI ID:: 1459040

Journal Information:: Journal of the American Ceramic Society, Journal Name: Journal of the American Ceramic Society Vol. 102 Journal Issue: 1; ISSN 0002-7820

Publisher:: Wiley-BlackwellCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 4 works

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