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Title: Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures

Authors:
ORCiD logo [1];  [2];  [1];  [1];  [1];  [1]
  1. School of Nuclear Science and Technology, Lanzhou University, Lanzhou Gansu China
  2. Pacific Northwest National Laboratory, Richland Washington
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1459040
Grant/Contract Number:  
AC05-76RL01830
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of the American Ceramic Society
Additional Journal Information:
Journal Name: Journal of the American Ceramic Society Journal Volume: 102 Journal Issue: 1; Journal ID: ISSN 0002-7820
Publisher:
Wiley-Blackwell
Country of Publication:
United States
Language:
English

Citation Formats

Zhang, Limin, Jiang, Weilin, Ai, Wensi, Chen, Liang, Pan, Chenlong, and Wang, Tieshan. Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures. United States: N. p., 2018. Web. doi:10.1111/jace.15895.
Zhang, Limin, Jiang, Weilin, Ai, Wensi, Chen, Liang, Pan, Chenlong, & Wang, Tieshan. Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures. United States. doi:10.1111/jace.15895.
Zhang, Limin, Jiang, Weilin, Ai, Wensi, Chen, Liang, Pan, Chenlong, and Wang, Tieshan. Thu . "Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures". United States. doi:10.1111/jace.15895.
@article{osti_1459040,
title = {Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures},
author = {Zhang, Limin and Jiang, Weilin and Ai, Wensi and Chen, Liang and Pan, Chenlong and Wang, Tieshan},
abstractNote = {},
doi = {10.1111/jace.15895},
journal = {Journal of the American Ceramic Society},
number = 1,
volume = 102,
place = {United States},
year = {2018},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1111/jace.15895

Citation Metrics:
Cited by: 2 works
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