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Title: Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures

Authors:
ORCiD logo [1] ;  [2] ;  [1] ;  [1] ;  [1] ;  [1]
  1. School of Nuclear Science and Technology, Lanzhou University, Lanzhou Gansu China
  2. Pacific Northwest National Laboratory, Richland Washington
Publication Date:
Grant/Contract Number:
AC05-76RL01830
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of the American Ceramic Society
Additional Journal Information:
Journal Name: Journal of the American Ceramic Society; Journal ID: ISSN 0002-7820
Publisher:
Wiley-Blackwell
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1459040

Zhang, Limin, Jiang, Weilin, Ai, Wensi, Chen, Liang, Pan, Chenlong, and Wang, Tieshan. Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures. United States: N. p., Web. doi:10.1111/jace.15895.
Zhang, Limin, Jiang, Weilin, Ai, Wensi, Chen, Liang, Pan, Chenlong, & Wang, Tieshan. Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures. United States. doi:10.1111/jace.15895.
Zhang, Limin, Jiang, Weilin, Ai, Wensi, Chen, Liang, Pan, Chenlong, and Wang, Tieshan. 2018. "Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures". United States. doi:10.1111/jace.15895.
@article{osti_1459040,
title = {Grain size variation in nanocrystalline silicon carbide irradiated at elevated temperatures},
author = {Zhang, Limin and Jiang, Weilin and Ai, Wensi and Chen, Liang and Pan, Chenlong and Wang, Tieshan},
abstractNote = {},
doi = {10.1111/jace.15895},
journal = {Journal of the American Ceramic Society},
number = ,
volume = ,
place = {United States},
year = {2018},
month = {7}
}

Works referenced in this record:

Interpretation of Raman spectra of disordered and amorphous carbon
journal, May 2000