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Title: Recombination velocity less than 100 cm/s at polycrystalline Al 2O 3/CdSeTe interfaces

Abstract

Reducing recombination in polycrystalline solar cells by orders of magnitude is currently one of the greatest challenges for increasing thin-film solar cell efficiency to theoretical limits. The question of how to do this has been a challenge for the thin-film community for decades. This work indicates that effective interface passivation is critical. Here, polycrystalline Al 2O 3/CdSeTe/Al 2O 3/glass heterostructures are grown, and a combination of spectroscopic, microscopic, and time-resolved electro-optical measurements demonstrates that the interface recombination velocity at alumina/thin-film interfaces can be less than 100 cm/s. This is three orders of magnitude less than typical CdTe interfaces without passivation, commensurate with single-crystal epitaxial CdMgSeTe/CdSeTe/CdMgSeTe double heterostructures, and enables minority-carrier lifetimes in polycrystalline CdSeTe well above 100 ns. Microscopic interfacial electric-field measurements identify the field effect as a potential mechanism for polycrystalline Al 2O 3/CdSeTe interface passivation. Furthermore, the results provide guidance for modeling and interface passivation in devices and indicate future paths to realize highly efficient thin-film solar cells.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [1];  [1];  [3];  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Colorado State Univ., Fort Collins, CO (United States); First Solar, Santa Clara, CA (United States)
  3. Colorado State Univ., Fort Collins, CO (United States)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1458907
Alternate Identifier(s):
OSTI ID: 1457491
Report Number(s):
NREL/JA-5900-71105
Journal ID: ISSN 0003-6951
Grant/Contract Number:  
AC36-08GO28308; 30306; 30307; EE0007365
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 26; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; spectroscopy; time resolved spectroscopy; thin films; solar cells; emission spectroscopy; passivation; second harmonic generation; heterojunctions

Citation Formats

Kuciauskas, Darius, Kephart, Jason M., Moseley, John, Metzger, Wyatt K., Sampath, Walajabad S., and Dippo, Pat. Recombination velocity less than 100 cm/s at polycrystalline Al2O3/CdSeTe interfaces. United States: N. p., 2018. Web. doi:10.1063/1.5030870.
Kuciauskas, Darius, Kephart, Jason M., Moseley, John, Metzger, Wyatt K., Sampath, Walajabad S., & Dippo, Pat. Recombination velocity less than 100 cm/s at polycrystalline Al2O3/CdSeTe interfaces. United States. doi:10.1063/1.5030870.
Kuciauskas, Darius, Kephart, Jason M., Moseley, John, Metzger, Wyatt K., Sampath, Walajabad S., and Dippo, Pat. Mon . "Recombination velocity less than 100 cm/s at polycrystalline Al2O3/CdSeTe interfaces". United States. doi:10.1063/1.5030870. https://www.osti.gov/servlets/purl/1458907.
@article{osti_1458907,
title = {Recombination velocity less than 100 cm/s at polycrystalline Al2O3/CdSeTe interfaces},
author = {Kuciauskas, Darius and Kephart, Jason M. and Moseley, John and Metzger, Wyatt K. and Sampath, Walajabad S. and Dippo, Pat},
abstractNote = {Reducing recombination in polycrystalline solar cells by orders of magnitude is currently one of the greatest challenges for increasing thin-film solar cell efficiency to theoretical limits. The question of how to do this has been a challenge for the thin-film community for decades. This work indicates that effective interface passivation is critical. Here, polycrystalline Al2O3/CdSeTe/Al2O3/glass heterostructures are grown, and a combination of spectroscopic, microscopic, and time-resolved electro-optical measurements demonstrates that the interface recombination velocity at alumina/thin-film interfaces can be less than 100 cm/s. This is three orders of magnitude less than typical CdTe interfaces without passivation, commensurate with single-crystal epitaxial CdMgSeTe/CdSeTe/CdMgSeTe double heterostructures, and enables minority-carrier lifetimes in polycrystalline CdSeTe well above 100 ns. Microscopic interfacial electric-field measurements identify the field effect as a potential mechanism for polycrystalline Al2O3/CdSeTe interface passivation. Furthermore, the results provide guidance for modeling and interface passivation in devices and indicate future paths to realize highly efficient thin-film solar cells.},
doi = {10.1063/1.5030870},
journal = {Applied Physics Letters},
number = 26,
volume = 112,
place = {United States},
year = {2018},
month = {6}
}

Journal Article:
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Cited by: 8 works
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Figures / Tables:

Fig. 1 Fig. 1: Illustration of substrate, absorber, and passivation layers in polycrystalline (a, ref. 9) and single-crystal epitaxial (b, ref. 16) double heterostructures studied here.

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    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.