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Title: Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1458799
Grant/Contract Number:  
FG02-07ER46431
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 121 Journal Issue: 1; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Gong, Shi-Jing, Zheng, Fan, and Rappe, Andrew M. Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe. United States: N. p., 2018. Web. doi:10.1103/PhysRevLett.121.017402.
Gong, Shi-Jing, Zheng, Fan, & Rappe, Andrew M. Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe. United States. https://doi.org/10.1103/PhysRevLett.121.017402
Gong, Shi-Jing, Zheng, Fan, and Rappe, Andrew M. Tue . "Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe". United States. https://doi.org/10.1103/PhysRevLett.121.017402.
@article{osti_1458799,
title = {Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe},
author = {Gong, Shi-Jing and Zheng, Fan and Rappe, Andrew M.},
abstractNote = {},
doi = {10.1103/PhysRevLett.121.017402},
journal = {Physical Review Letters},
number = 1,
volume = 121,
place = {United States},
year = {2018},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
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https://doi.org/10.1103/PhysRevLett.121.017402

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