Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1458799
- Grant/Contract Number:
- FG02-07ER46431
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Name: Physical Review Letters Journal Volume: 121 Journal Issue: 1; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Gong, Shi-Jing, Zheng, Fan, and Rappe, Andrew M. Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe. United States: N. p., 2018.
Web. doi:10.1103/PhysRevLett.121.017402.
Gong, Shi-Jing, Zheng, Fan, & Rappe, Andrew M. Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe. United States. https://doi.org/10.1103/PhysRevLett.121.017402
Gong, Shi-Jing, Zheng, Fan, and Rappe, Andrew M. Tue .
"Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe". United States. https://doi.org/10.1103/PhysRevLett.121.017402.
@article{osti_1458799,
title = {Phonon Influence on Bulk Photovoltaic Effect in the Ferroelectric Semiconductor GeTe},
author = {Gong, Shi-Jing and Zheng, Fan and Rappe, Andrew M.},
abstractNote = {},
doi = {10.1103/PhysRevLett.121.017402},
journal = {Physical Review Letters},
number = 1,
volume = 121,
place = {United States},
year = {2018},
month = {7}
}
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https://doi.org/10.1103/PhysRevLett.121.017402
https://doi.org/10.1103/PhysRevLett.121.017402
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Cited by: 1 work
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