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Title: Iron and intrinsic deep level states in Ga2O3

Abstract

In this study, using a combination of deep level transient spectroscopy, secondary ion mass spectrometry, proton irradiation, and hybrid functional calculations, we identify two similar deep levels that are associated with Fe impurities and intrinsic defects in bulk crystals and molecular beam epitaxy and hydride vapor phase epitaxi-grown epilayers of β-Ga2O3. First, our results indicate that FeGa, and not an intrinsic defect, acts as the deep acceptor responsible for the often dominating E2 level at ~0.78 eV below the conduction band minimum. Second, by provoking additional intrinsic defect generation via proton irradiation, we identified the emergence of a new level, labeled as E2*, having the ionization energy very close to that of E2, but exhibiting an order of magnitude larger capture cross section. Importantly, the properties of E2* are found to be consistent with its intrinsic origin. As such, contradictory opinions of a long standing literature debate on either extrinsic or intrinsic origin of the deep acceptor in question converge accounting for possible contributions from E2 and E2* in different experimental conditions.

Authors:
ORCiD logo [1];  [2];  [1];  [1];  [3];  [3];  [3];  [1]
  1. Univ. of Oslo (Norway). Department of Physics/Centre for Materials Science and Nanotechnology
  2. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  3. ABB Corporate Research, Segelhofstrasse (Switzerland)
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1458679
Alternate Identifier(s):
OSTI ID: 1417925
Report Number(s):
LLNL-JRNL-743968
Journal ID: ISSN 0003-6951; 898727
Grant/Contract Number:  
AC52-07NA27344
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 4; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Ingebrigtsen, M. E., Varley, J. B., Kuznetsov, A. Yu., Svensson, B. G., Alfieri, G., Mihaila, A., Badstubner, U., and Vines, L. Iron and intrinsic deep level states in Ga2O3. United States: N. p., 2018. Web. doi:10.1063/1.5020134.
Ingebrigtsen, M. E., Varley, J. B., Kuznetsov, A. Yu., Svensson, B. G., Alfieri, G., Mihaila, A., Badstubner, U., & Vines, L. Iron and intrinsic deep level states in Ga2O3. United States. https://doi.org/10.1063/1.5020134
Ingebrigtsen, M. E., Varley, J. B., Kuznetsov, A. Yu., Svensson, B. G., Alfieri, G., Mihaila, A., Badstubner, U., and Vines, L. Wed . "Iron and intrinsic deep level states in Ga2O3". United States. https://doi.org/10.1063/1.5020134. https://www.osti.gov/servlets/purl/1458679.
@article{osti_1458679,
title = {Iron and intrinsic deep level states in Ga2O3},
author = {Ingebrigtsen, M. E. and Varley, J. B. and Kuznetsov, A. Yu. and Svensson, B. G. and Alfieri, G. and Mihaila, A. and Badstubner, U. and Vines, L.},
abstractNote = {In this study, using a combination of deep level transient spectroscopy, secondary ion mass spectrometry, proton irradiation, and hybrid functional calculations, we identify two similar deep levels that are associated with Fe impurities and intrinsic defects in bulk crystals and molecular beam epitaxy and hydride vapor phase epitaxi-grown epilayers of β-Ga2O3. First, our results indicate that FeGa, and not an intrinsic defect, acts as the deep acceptor responsible for the often dominating E2 level at ~0.78 eV below the conduction band minimum. Second, by provoking additional intrinsic defect generation via proton irradiation, we identified the emergence of a new level, labeled as E2*, having the ionization energy very close to that of E2, but exhibiting an order of magnitude larger capture cross section. Importantly, the properties of E2* are found to be consistent with its intrinsic origin. As such, contradictory opinions of a long standing literature debate on either extrinsic or intrinsic origin of the deep acceptor in question converge accounting for possible contributions from E2 and E2* in different experimental conditions.},
doi = {10.1063/1.5020134},
journal = {Applied Physics Letters},
number = 4,
volume = 112,
place = {United States},
year = {Wed Jan 24 00:00:00 EST 2018},
month = {Wed Jan 24 00:00:00 EST 2018}
}

Journal Article:
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Cited by: 153 works
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Figures / Tables:

Figure 1 Figure 1: DLTS signal (2Nd x ${\Delta}C/C$) versus temperature for (010) and ($\bar{2}01$) oriented bulk, as well as MBE and HVPE samples, here represented by (640 ms)-1 lock-in rate window. Note the different vertical-scale in the temperature range of E2.

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Works referenced in this record:

Hydrogenated cation vacancies in semiconducting oxides
journal, August 2011


Projector augmented-wave method
journal, December 1994


Electrical conductivity and carrier concentration control in β-Ga2O3 by Si doping
journal, May 2008

  • Víllora, Encarnación G.; Shimamura, Kiyoshi; Yoshikawa, Yukio
  • Applied Physics Letters, Vol. 92, Issue 20
  • DOI: 10.1063/1.2919728

Hybrid functionals based on a screened Coulomb potential
journal, May 2003

  • Heyd, Jochen; Scuseria, Gustavo E.; Ernzerhof, Matthias
  • The Journal of Chemical Physics, Vol. 118, Issue 18
  • DOI: 10.1063/1.1564060

Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β -gallium oxide single crystals
journal, March 2016


Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
journal, July 1996


Optical Absorption and Photoconductivity in the Band Edge of β Ga 2 O 3
journal, October 1965


Recent progress in Ga 2 O 3 power devices
journal, January 2016

  • Higashiwaki, Masataka; Sasaki, Kohei; Murakami, Hisashi
  • Semiconductor Science and Technology, Vol. 31, Issue 3
  • DOI: 10.1088/0268-1242/31/3/034001

Electrostatic interactions between charged defects in supercells
journal, December 2010

  • Freysoldt, Christoph; Neugebauer, Jörg; Van de Walle, Chris G.
  • physica status solidi (b), Vol. 248, Issue 5
  • DOI: 10.1002/pssb.201046289

Inhibition of unintentional extra carriers by Mn valence change for high insulating devices
journal, April 2016

  • Guo, Daoyou; Li, Peigang; Wu, Zhenping
  • Scientific Reports, Vol. 6, Issue 1
  • DOI: 10.1038/srep24190

Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


Gallium vacancies in β-Ga 2 O 3 crystals
journal, May 2017

  • Kananen, B. E.; Halliburton, L. E.; Stevens, K. T.
  • Applied Physics Letters, Vol. 110, Issue 20
  • DOI: 10.1063/1.4983814

Standard enthalpies of formation of some 3d transition metal gallides by high temperature direct synthesis calorimetry
journal, August 1999


Overlapping electron traps in n ‐type silicon studied by capacitance transient spectroscopy
journal, August 1989

  • Svensson, B. G.; Rydén, K. ‐H.; Lewerentz, B. M. S.
  • Journal of Applied Physics, Vol. 66, Issue 4
  • DOI: 10.1063/1.344389

First-principles calculations for point defects in solids
journal, March 2014

  • Freysoldt, Christoph; Grabowski, Blazej; Hickel, Tilmann
  • Reviews of Modern Physics, Vol. 86, Issue 1
  • DOI: 10.1103/RevModPhys.86.253

Iron as a source of efficient Shockley-Read-Hall recombination in GaN
journal, October 2016

  • Wickramaratne, Darshana; Shen, Jimmy-Xuan; Dreyer, Cyrus E.
  • Applied Physics Letters, Vol. 109, Issue 16
  • DOI: 10.1063/1.4964831

Fabrication and characterization of transparent conductive Sn-doped β-Ga2O3 single crystal
journal, June 2007


Gallium oxide (Ga 2 O 3 ) metal-semiconductor field-effect transistors on single-crystal β-Ga 2 O 3 (010) substrates
journal, January 2012

  • Higashiwaki, Masataka; Sasaki, Kohei; Kuramata, Akito
  • Applied Physics Letters, Vol. 100, Issue 1
  • DOI: 10.1063/1.3674287

Temperature-dependent exciton resonance energies and their correlation with IR-active optical phonon modes in β-Ga2O3 single crystals
journal, March 2016

  • Onuma, T.; Saito, S.; Sasaki, K.
  • Applied Physics Letters, Vol. 108, Issue 10
  • DOI: 10.1063/1.4943175

Depletion-mode Ga 2 O 3 metal-oxide-semiconductor field-effect transistors on β-Ga 2 O 3 (010) substrates and temperature dependence of their device characteristics
journal, September 2013

  • Higashiwaki, Masataka; Sasaki, Kohei; Kamimura, Takafumi
  • Applied Physics Letters, Vol. 103, Issue 12
  • DOI: 10.1063/1.4821858

Erratum: “Hybrid functionals based on a screened Coulomb potential” [J. Chem. Phys. 118, 8207 (2003)]
journal, June 2006

  • Heyd, Jochen; Scuseria, Gustavo E.; Ernzerhof, Matthias
  • The Journal of Chemical Physics, Vol. 124, Issue 21
  • DOI: 10.1063/1.2204597

Electrostatics-based finite-size corrections for first-principles point defect calculations
journal, May 2014


Electrical compensation by Ga vacancies in Ga 2 O 3 thin films
journal, June 2015

  • Korhonen, E.; Tuomisto, F.; Gogova, D.
  • Applied Physics Letters, Vol. 106, Issue 24
  • DOI: 10.1063/1.4922814

On the bulk β-Ga2O3 single crystals grown by the Czochralski method
journal, October 2014


Choosing the correct hybrid for defect calculations: A case study on intrinsic carrier trapping in β G a 2 O 3
journal, February 2017


Self-trapped holes in β-Ga 2 O 3 crystals
journal, December 2017

  • Kananen, B. E.; Giles, N. C.; Halliburton, L. E.
  • Journal of Applied Physics, Vol. 122, Issue 21
  • DOI: 10.1063/1.5007095

Ion mass effect on vacancy-related deep levels in Si induced by ion implantation
journal, May 2002


Crystal Structure of β‐Ga 2 O 3
journal, September 1960

  • Geller, S.
  • The Journal of Chemical Physics, Vol. 33, Issue 3
  • DOI: 10.1063/1.1731237

Deep level defects throughout the bandgap of (010) β-Ga 2 O 3 detected by optically and thermally stimulated defect spectroscopy
journal, February 2016

  • Zhang, Z.; Farzana, E.; Arehart, A. R.
  • Applied Physics Letters, Vol. 108, Issue 5
  • DOI: 10.1063/1.4941429

Bulk β-Ga<sub>2</sub>O<sub>3</sub> with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects
journal, May 2017


Oxygen vacancies and donor impurities in β-Ga2O3
journal, October 2010

  • Varley, J. B.; Weber, J. R.; Janotti, A.
  • Applied Physics Letters, Vol. 97, Issue 14
  • DOI: 10.1063/1.3499306

Electrical properties of β -Ga 2 O 3 single crystals grown by the Czochralski method
journal, September 2011

  • Irmscher, K.; Galazka, Z.; Pietsch, M.
  • Journal of Applied Physics, Vol. 110, Issue 6
  • DOI: 10.1063/1.3642962

High-resolution X-ray luminescence extension imaging
journal, February 2021


Electronic structure of AlFeN films exhibiting crystallographic orientation change from c- to a-axis with Fe concentrations and annealing effect
journal, February 2020


Works referencing / citing this record:

Electrical Properties of Vertical p‐NiO/n‐Ga 2 O 3 and p‐ZnCo 2 O 4 /n‐Ga 2 O 3 pn‐Heterodiodes
journal, March 2019

  • Schlupp, Peter; Splith, Daniel; von Wenckstern, Holger
  • physica status solidi (a), Vol. 216, Issue 7
  • DOI: 10.1002/pssa.201800729

Defect Formation Energies of Interstitial C, Si, and Ge Impurities in β ‐Ga 2 O 3
journal, April 2019

  • Bouzid, Assil; Pasquarello, Alfredo
  • physica status solidi (RRL) – Rapid Research Letters, Vol. 13, Issue 8
  • DOI: 10.1002/pssr.201800633

Ga 2 O 3 photodetector arrays for solar-blind imaging
journal, January 2019

  • Chen, Yan-Cheng; Lu, Ying-Jie; Liu, Qian
  • Journal of Materials Chemistry C, Vol. 7, Issue 9
  • DOI: 10.1039/c8tc05251d

Deep level defects in Ge-doped (010) β-Ga 2 O 3 layers grown by plasma-assisted molecular beam epitaxy
journal, April 2018

  • Farzana, Esmat; Ahmadi, Elaheh; Speck, James S.
  • Journal of Applied Physics, Vol. 123, Issue 16
  • DOI: 10.1063/1.5010608

Compensation and persistent photocapacitance in homoepitaxial Sn-doped β-Ga 2 O 3
journal, March 2018

  • Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.
  • Journal of Applied Physics, Vol. 123, Issue 11
  • DOI: 10.1063/1.5025916

Diffusion length of non-equilibrium minority charge carriers in β-Ga 2 O 3 measured by electron beam induced current
journal, May 2018

  • Yakimov, E. B.; Polyakov, A. Y.; Smirnov, N. B.
  • Journal of Applied Physics, Vol. 123, Issue 18
  • DOI: 10.1063/1.5027559

Donors and deep acceptors in β-Ga 2 O 3
journal, August 2018

  • Neal, Adam T.; Mou, Shin; Rafique, Subrina
  • Applied Physics Letters, Vol. 113, Issue 6
  • DOI: 10.1063/1.5034474

Demonstration of β-(Al x Ga 1-x ) 2 O 3 /Ga 2 O 3 double heterostructure field effect transistors
journal, June 2018

  • Zhang, Yuewei; Joishi, Chandan; Xia, Zhanbo
  • Applied Physics Letters, Vol. 112, Issue 23
  • DOI: 10.1063/1.5037095

Effect of buffer iron doping on delta-doped β-Ga 2 O 3 metal semiconductor field effect transistors
journal, September 2018

  • Joishi, Chandan; Xia, Zhanbo; McGlone, Joe
  • Applied Physics Letters, Vol. 113, Issue 12
  • DOI: 10.1063/1.5039502

Hole traps and persistent photocapacitance in proton irradiated β-Ga 2 O 3 films doped with Si
journal, September 2018

  • Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.
  • APL Materials, Vol. 6, Issue 9
  • DOI: 10.1063/1.5042646

Compensation and hydrogen passivation of magnesium acceptors in β-Ga 2 O 3
journal, July 2018

  • Ritter, Jacob R.; Huso, Jesse; Dickens, Peter T.
  • Applied Physics Letters, Vol. 113, Issue 5
  • DOI: 10.1063/1.5044627

Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga 2 O 3
journal, August 2018

  • Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.
  • Applied Physics Letters, Vol. 113, Issue 9
  • DOI: 10.1063/1.5049130

Deep level defects in β-Ga 2 O 3 pulsed laser deposited thin films and Czochralski-grown bulk single crystals by thermally stimulated techniques
journal, March 2019

  • Wang, Buguo; Look, David; Leedy, Kevin
  • Journal of Applied Physics, Vol. 125, Issue 10
  • DOI: 10.1063/1.5049820

Electrical properties of bulk semi-insulating β-Ga 2 O 3 (Fe)
journal, October 2018

  • Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.
  • Applied Physics Letters, Vol. 113, Issue 14
  • DOI: 10.1063/1.5051986

Proton irradiation induced defects in β-Ga 2 O 3 : A combined EPR and theory study
journal, February 2019

  • von Bardeleben, Hans Jürgen; Zhou, Shengqiang; Gerstmann, Uwe
  • APL Materials, Vol. 7, Issue 2
  • DOI: 10.1063/1.5053158

Transition from electron accumulation to depletion at β-Ga 2 O 3 surfaces: The role of hydrogen and the charge neutrality level
journal, February 2019

  • Swallow, J. E. N.; Varley, J. B.; Jones, L. A. H.
  • APL Materials, Vol. 7, Issue 2
  • DOI: 10.1063/1.5054091

Impact of deep level defects induced by high energy neutron radiation in β-Ga 2 O 3
journal, February 2019

  • Farzana, Esmat; Chaiken, Max F.; Blue, Thomas E.
  • APL Materials, Vol. 7, Issue 2
  • DOI: 10.1063/1.5054606

Impact of proton irradiation on conductivity and deep level defects in β-Ga 2 O 3
journal, February 2019

  • Ingebrigtsen, M. E.; Kuznetsov, A. Yu.; Svensson, B. G.
  • APL Materials, Vol. 7, Issue 2
  • DOI: 10.1063/1.5054826

Measurement of ultrafast dynamics of photoexcited carriers in β -Ga 2 O 3 by two-color optical pump-probe spectroscopy
journal, December 2018

  • Koksal, Okan; Tanen, Nicholas; Jena, Debdeep
  • Applied Physics Letters, Vol. 113, Issue 25
  • DOI: 10.1063/1.5058164

Perspective: Ga 2 O 3 for ultra-high power rectifiers and MOSFETS
journal, December 2018

  • Pearton, S. J.; Ren, Fan; Tadjer, Marko
  • Journal of Applied Physics, Vol. 124, Issue 22
  • DOI: 10.1063/1.5062841

Study of trap levels in β-Ga 2 O 3 by thermoluminescence spectroscopy
journal, February 2019

  • Islam, Md Minhazul; Rana, Dhan; Hernandez, Armando
  • Journal of Applied Physics, Vol. 125, Issue 5
  • DOI: 10.1063/1.5066424

Deep traps and persistent photocapacitance in β-(Al 0.14 Ga 0.86 ) 2 O 3 /Ga 2 O 3 heterojunctions
journal, March 2019

  • Polyakov, A. Y.; Smirnov, N. B.; Schemerov, I. V.
  • Journal of Applied Physics, Vol. 125, Issue 9
  • DOI: 10.1063/1.5080941

Ir 4+ ions in β-Ga 2 O 3 crystals: An unintentional deep donor
journal, January 2019

  • Lenyk, C. A.; Giles, N. C.; Scherrer, E. M.
  • Journal of Applied Physics, Vol. 125, Issue 4
  • DOI: 10.1063/1.5081825

Generation and metastability of deep level states in β-Ga 2 O 3 exposed to reverse bias at elevated temperatures
journal, May 2019

  • Ingebrigtsen, M. E.; Kuznetsov, A. Yu.; Svensson, B. G.
  • Journal of Applied Physics, Vol. 125, Issue 18
  • DOI: 10.1063/1.5088655

Computational identification of Ga-vacancy related electron paramagnetic resonance centers in β -Ga 2 O 3
journal, May 2019

  • Skachkov, Dmitry; Lambrecht, Walter R. L.; von Bardeleben, Hans Jürgen
  • Journal of Applied Physics, Vol. 125, Issue 18
  • DOI: 10.1063/1.5092626

Deep trap spectra of Sn-doped α-Ga 2 O 3 grown by halide vapor phase epitaxy on sapphire
journal, May 2019

  • Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.
  • APL Materials, Vol. 7, Issue 5
  • DOI: 10.1063/1.5094787

Deep-level noise characterization of MOVPE-grown β -Ga 2 O 3
journal, September 2019

  • Golz, Christian; Galazka, Zbigniew; Popp, Andreas
  • Applied Physics Letters, Vol. 115, Issue 13
  • DOI: 10.1063/1.5098994

Hydrogen plasma treatment of β -Ga 2 O 3 : Changes in electrical properties and deep trap spectra
journal, July 2019

  • Polyakov, A. Y.; Lee, In-Hwan; Smirnov, N. B.
  • Applied Physics Letters, Vol. 115, Issue 3
  • DOI: 10.1063/1.5108790

Defects at the surface of β-Ga 2 O 3 produced by Ar plasma exposure
journal, June 2019

  • Polyakov, A. Y.; Lee, In-Hwan; Smirnov, N. B.
  • APL Materials, Vol. 7, Issue 6
  • DOI: 10.1063/1.5109025

Optimized hybrid functionals for defect calculations in semiconductors
journal, October 2019

  • Deák, Peter; Lorke, Michael; Aradi, Bálint
  • Journal of Applied Physics, Vol. 126, Issue 13
  • DOI: 10.1063/1.5110643

Identification of critical buffer traps in Si δ-doped β-Ga 2 O 3 MESFETs
journal, October 2019

  • McGlone, Joe F.; Xia, Zhanbo; Joishi, Chandan
  • Applied Physics Letters, Vol. 115, Issue 15
  • DOI: 10.1063/1.5118250

Optical absorption of Fe in doped Ga 2 O 3
journal, October 2019

  • Bhandari, Suman; Zvanut, M. E.; Varley, J. B.
  • Journal of Applied Physics, Vol. 126, Issue 16
  • DOI: 10.1063/1.5124825

Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga 2 O 3 layers grown by plasma-assisted molecular beam epitaxy
journal, December 2019

  • Farzana, Esmat; Mauze, Akhil; Varley, Joel B.
  • APL Materials, Vol. 7, Issue 12
  • DOI: 10.1063/1.5126463

Iridium-related complexes in Czochralski-grown β-Ga 2 O 3
journal, December 2019

  • Ritter, Jacob R.; Lynn, Kelvin G.; McCluskey, Matthew D.
  • Journal of Applied Physics, Vol. 126, Issue 22
  • DOI: 10.1063/1.5129781

Deep donors and acceptors in β-Ga 2 O 3 crystals: Determination of the Fe 2+/3+ level by a noncontact method
journal, December 2019

  • Lenyk, C. A.; Gustafson, T. D.; Halliburton, L. E.
  • Journal of Applied Physics, Vol. 126, Issue 24
  • DOI: 10.1063/1.5133051

Optical transitions for impurities in Ga 2 O 3 as determined by photo-induced electron paramagnetic resonance spectroscopy
journal, February 2020

  • Bhandari, Suman; Zvanut, M. E.
  • Journal of Applied Physics, Vol. 127, Issue 6
  • DOI: 10.1063/1.5140193

Self-trapped hole and impurity-related broad luminescence in β -Ga 2 O 3
journal, February 2020

  • Frodason, Y. K.; Johansen, K. M.; Vines, L.
  • Journal of Applied Physics, Vol. 127, Issue 7
  • DOI: 10.1063/1.5140742

A survey of acceptor dopants for β -Ga 2 O 3
journal, April 2018


β -Ga 2 O 3 for wide-bandgap electronics and optoelectronics
journal, October 2018


Lateral β -Ga 2 O 3 field effect transistors
journal, November 2019

  • Chabak, Kelson D.; Leedy, Kevin D.; Green, Andrew J.
  • Semiconductor Science and Technology, Vol. 35, Issue 1
  • DOI: 10.1088/1361-6641/ab55fe

Gallium oxide-based solar-blind ultraviolet photodetectors
journal, January 2020

  • Chen, Xuanhu; Ren, Fang-Fang; Ye, Jiandong
  • Semiconductor Science and Technology, Vol. 35, Issue 2
  • DOI: 10.1088/1361-6641/ab6102

Degenerate doping in β -Ga 2 O 3 single crystals through Hf-doping
journal, March 2020

  • Saleh, Muad; Varley, Joel B.; Jesenovec, Jani
  • Semiconductor Science and Technology, Vol. 35, Issue 4
  • DOI: 10.1088/1361-6641/ab75a6

Defect States Determining Dynamic Trapping-Detrapping in β-Ga 2 O 3 Field-Effect Transistors
journal, January 2019

  • Polyakov, Alexander Y.; Smirnov, Nikolai B.; Shchemerov, Ivan V.
  • ECS Journal of Solid State Science and Technology, Vol. 8, Issue 7
  • DOI: 10.1149/2.0031907jss

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journal, January 2019

  • Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.
  • ECS Journal of Solid State Science and Technology, Vol. 8, Issue 7
  • DOI: 10.1149/2.0041907jss

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journal, January 2019

  • Polyakov, A. Y.; Lee, In-Hwan; Smirnov, N. B.
  • ECS Journal of Solid State Science and Technology, Vol. 8, Issue 11
  • DOI: 10.1149/2.0041911jss

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journal, January 2019

  • Polyakov, A. Y.; Smirnov, N. B.; Schemerov, I. V.
  • ECS Journal of Solid State Science and Technology, Vol. 8, Issue 7
  • DOI: 10.1149/2.0171907jss

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journal, January 2019

  • Tadjer, Marko J.; Fares, Chaker; Mahadik, Nadeemullah A.
  • ECS Journal of Solid State Science and Technology, Vol. 8, Issue 7
  • DOI: 10.1149/2.0271907jss

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journal, January 2019

  • Lyons, John L.
  • ECS Journal of Solid State Science and Technology, Vol. 8, Issue 7
  • DOI: 10.1149/2.0331907jss

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  • Tadjer, Marko J.; Lyons, John L.; Nepal, Neeraj
  • ECS Journal of Solid State Science and Technology, Vol. 8, Issue 7
  • DOI: 10.1149/2.0341907jss

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text, January 2020


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