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Title: Anomalous helicity-dependent photocurrent in the topological insulator ( Bi 0.5 Sb 0.5 ) 2 Te 3 on a GaAs substrate [Spin manipulation at the interface of a topological insulator and a non-magnetic semiconductor]

Abstract

We present that the emerging material, topological insulator, has provided new opportunities for spintronic applications, owing to its strong spin-orbit character. Topological insulator based heterostructures that display spin-charge coupling driven by topology at surfaces have great potential for the realization of novel spintronic devices. Here, we report the observation of anomalous photogalvanic effect in (Bi 0.5Sb 0.5) 2Te 3 thin films grown on GaAs substrate. We demonstrate that the magnitude, direction, and temperature dependence of the helicity-dependent photocurrent (HDPC) can be modulated by the gate voltage. From spatially resolved photocurrent measurements, we show that the line profile of HDPC in (Bi 0.5Sb 0.5) 2Te 3/GaAs is unaffected by the variation of beam size, in contrast to the photocurrent response measured in a (Bi 0.5Sb 0.5) 2Te 3/mica structure.

Authors:
 [1];  [2];  [2];  [2];  [1];  [1];  [1];  [2];  [1]
  1. Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
  2. Univ. of California, Los Angeles, CA (United States). Department of Electrical Engineering
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1458665
Alternate Identifier(s):
OSTI ID: 1417929
Report Number(s):
LLNL-JRNL-697157
Journal ID: ISSN 2469-9950; PRBMDO; 827767; TRN: US1901495
Grant/Contract Number:  
AC52-07NA27344; 15-LW-018; 16-SI-004
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 97; Journal Issue: 4; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE

Citation Formats

Qu, Dong-Xia, Che, Xiaoyu, Kou, Xufeng, Pan, Lei, Crowhurst, Jonathan, Armstrong, Michael R., Dubois, Jonathan, Wang, Kang L., and Chapline, George F. Anomalous helicity-dependent photocurrent in the topological insulator (Bi0.5Sb0.5)2Te3 on a GaAs substrate [Spin manipulation at the interface of a topological insulator and a non-magnetic semiconductor]. United States: N. p., 2018. Web. doi:10.1103/PhysRevB.97.045308.
Qu, Dong-Xia, Che, Xiaoyu, Kou, Xufeng, Pan, Lei, Crowhurst, Jonathan, Armstrong, Michael R., Dubois, Jonathan, Wang, Kang L., & Chapline, George F. Anomalous helicity-dependent photocurrent in the topological insulator (Bi0.5Sb0.5)2Te3 on a GaAs substrate [Spin manipulation at the interface of a topological insulator and a non-magnetic semiconductor]. United States. doi:10.1103/PhysRevB.97.045308.
Qu, Dong-Xia, Che, Xiaoyu, Kou, Xufeng, Pan, Lei, Crowhurst, Jonathan, Armstrong, Michael R., Dubois, Jonathan, Wang, Kang L., and Chapline, George F. Wed . "Anomalous helicity-dependent photocurrent in the topological insulator (Bi0.5Sb0.5)2Te3 on a GaAs substrate [Spin manipulation at the interface of a topological insulator and a non-magnetic semiconductor]". United States. doi:10.1103/PhysRevB.97.045308. https://www.osti.gov/servlets/purl/1458665.
@article{osti_1458665,
title = {Anomalous helicity-dependent photocurrent in the topological insulator (Bi0.5Sb0.5)2Te3 on a GaAs substrate [Spin manipulation at the interface of a topological insulator and a non-magnetic semiconductor]},
author = {Qu, Dong-Xia and Che, Xiaoyu and Kou, Xufeng and Pan, Lei and Crowhurst, Jonathan and Armstrong, Michael R. and Dubois, Jonathan and Wang, Kang L. and Chapline, George F.},
abstractNote = {We present that the emerging material, topological insulator, has provided new opportunities for spintronic applications, owing to its strong spin-orbit character. Topological insulator based heterostructures that display spin-charge coupling driven by topology at surfaces have great potential for the realization of novel spintronic devices. Here, we report the observation of anomalous photogalvanic effect in (Bi0.5Sb0.5)2Te3 thin films grown on GaAs substrate. We demonstrate that the magnitude, direction, and temperature dependence of the helicity-dependent photocurrent (HDPC) can be modulated by the gate voltage. From spatially resolved photocurrent measurements, we show that the line profile of HDPC in (Bi0.5Sb0.5)2Te3/GaAs is unaffected by the variation of beam size, in contrast to the photocurrent response measured in a (Bi0.5Sb0.5)2Te3/mica structure.},
doi = {10.1103/PhysRevB.97.045308},
journal = {Physical Review B},
number = 4,
volume = 97,
place = {United States},
year = {2018},
month = {1}
}

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Figures / Tables:

FIG. 1 FIG. 1: Sample geometry and results of scanning photocurrent measurements. (a) Schematic of the experimental geometry. (b) The optical image of a representative BST/GaAs sample patterned into a Hall bar structure. The red (black) triangle marks the laser excitation position in sample G1 (M1) with the corresponding Jy/I shown inmore » panel c (panel d). (c-d) Jy/I versus photon polarization for sample G1 at y = −65 µm (c) and sample M1 at y = −36 µm (d). The polarization of the light is modulated with a period from right-circularly polarized Ω−, to linearly polarized↔, to left-circularly polarized Ω+, and back to linearly polarized↔. The solid green lines are fits as explained in text. The solid blue curve is extracted circular photocurrent component JC = C sin 2α. (e-f) Scanning photocurrent images for sample G1 (e) and M1 (f) under linearly polarized light. Dashed and solid lines indicate the edges of the sample and electrodes. (g) Spatial profiles of JC /I along y axis for samples G1, M1, and G2 at room temperature.« less

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Works referenced in this record:

Topological insulators and superconductors
journal, October 2011


Evidence of the two surface states of (Bi0.53Sb0.47)2Te3 films grown by van der Waals epitaxy
journal, December 2013

  • He, Liang; Kou, Xufeng; Lang, Murong
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep03406

Spin Hall effect devices
journal, April 2012

  • Jungwirth, Tomas; Wunderlich, Jörg; Olejník, Kamil
  • Nature Materials, Vol. 11, Issue 5
  • DOI: 10.1038/nmat3279

Spin injection and helicity control of surface spin photocurrent in a three dimensional topological insulator
journal, May 2017

  • Huang, Y. Q.; Song, Y. X.; Wang, S. M.
  • Nature Communications, Vol. 8, Issue 1
  • DOI: 10.1038/ncomms15401

Spin-Electricity Conversion Induced by Spin Injection into Topological Insulators
journal, November 2014


Electrical and Optical Enhancement of Photoconductivity in Semi-Insulating GaAs
journal, October 1968


Helicity dependent photocurrent in electrically gated (Bi1−x Sb x )2Te3 thin films
journal, October 2017


Enhanced photogalvanic current in topological insulators via Fermi energy tuning
journal, February 2016


Ultrafast helicity control of surface currents in topological insulators with near-unity fidelity
journal, March 2015

  • Kastl, Christoph; Karnetzky, Christoph; Karl, Helmut
  • Nature Communications, Vol. 6, Issue 1
  • DOI: 10.1038/ncomms7617

Colloquium: Topological insulators
journal, November 2010


Control over topological insulator photocurrents with light polarization
journal, December 2011

  • McIver, J. W.; Hsieh, D.; Steinberg, H.
  • Nature Nanotechnology, Vol. 7, Issue 2, p. 96-100
  • DOI: 10.1038/nnano.2011.214

Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi2Te3
journal, July 2010


Multilevel Spin-Orbit Torque MRAMs
journal, February 2015

  • Kim, Yusung; Fong, Xuanyao; Kwon, Kon-Woo
  • IEEE Transactions on Electron Devices, Vol. 62, Issue 2
  • DOI: 10.1109/TED.2014.2377721

Spintronics and pseudospintronics in graphene and topological insulators
journal, April 2012

  • Pesin, Dmytro; MacDonald, Allan H.
  • Nature Materials, Vol. 11, Issue 5
  • DOI: 10.1038/nmat3305

Ambipolar field effect in the ternary topological insulator (BixSb1–x)2Te3 by composition tuning
journal, October 2011

  • Kong, Desheng; Chen, Yulin; Cha, Judy J.
  • Nature Nanotechnology, Vol. 6, Issue 11
  • DOI: 10.1038/nnano.2011.172

Exchange-Coupling-Induced Symmetry Breaking in Topological Insulators
journal, April 2013


EL2 related deep traps in semi‐insulating GaAs
journal, January 1991

  • Desnica, U. V.; Desnica, Dunja I.; Šantić, B.
  • Applied Physics Letters, Vol. 58, Issue 3
  • DOI: 10.1063/1.104660

Microscopic Theory of the Inverse Edelstein Effect
journal, March 2014


Identification of Helicity-Dependent Photocurrents from Topological Surface States in Bi2Se3 Gated by Ionic Liquid
journal, May 2014

  • Duan, Junxi; Tang, Ning; He, Xin
  • Scientific Reports, Vol. 4, Issue 1
  • DOI: 10.1038/srep04889

Imaging of Photocurrent Generation and Collection in Single-Layer Graphene
journal, May 2009

  • Park, Jiwoong; Ahn, Y. H.; Ruiz-Vargas, Carlos
  • Nano Letters, Vol. 9, Issue 5
  • DOI: 10.1021/nl8029493

Band structure engineering in (Bi1−xSbx)2Te3 ternary topological insulators
journal, September 2011

  • Zhang, Jinsong; Chang, Cui-Zu; Zhang, Zuocheng
  • Nature Communications, Vol. 2, Issue 1
  • DOI: 10.1038/ncomms1588

Electrical detection of charge-current-induced spin polarization due to spin-momentum locking in Bi2Se3
journal, February 2014

  • Li, C. H.; van ‘t Erve, O. M. J.; Robinson, J. T.
  • Nature Nanotechnology, Vol. 9, Issue 3
  • DOI: 10.1038/nnano.2014.16

Crossover of the three-dimensional topological insulator Bi2Se3 to the two-dimensional limit
journal, June 2010

  • Zhang, Yi; He, Ke; Chang, Cui-Zu
  • Nature Physics, Vol. 6, Issue 8
  • DOI: 10.1038/nphys1689

Observation of the Spin Hall Effect in Semiconductors
journal, December 2004


Terahertz spin current pulses controlled by magnetic heterostructures
journal, March 2013

  • Kampfrath, T.; Battiato, M.; Maldonado, P.
  • Nature Nanotechnology, Vol. 8, Issue 4
  • DOI: 10.1038/nnano.2013.43

The energy level of the EL2 defect in GaAs
journal, January 1999


Isolated arsenic-antisite defect in GaAs and the properties of EL 2
journal, November 1989


Spin Hall Effect Transistor
journal, December 2010


Photocurrent response of topological insulator surface states
journal, August 2013


    Figures/Tables have been extracted from DOE-funded journal article accepted manuscripts.