Realizing an Epitaxial Decorated Stanene with an Insulating Bandgap
Abstract
Abstract The exploration of intriguing topological quantum physics in stanene has attracted enormous interest but is challenged by lacking desirable material samples. The successful fabrication of monolayer stanene on PbTe(111) films with low‐temperature molecular beam epitaxy and thorough characterizations of its atomic and electronic structures are reported here. In situ angle‐resolved photoemission spectroscopy together with first‐principles calculations identify two hole bands of p xy orbital with a spin‐orbit coupling induced band splitting and meanwhile reveal an automatic passivation of p z orbital of stanene. Importantly, material properties are tuned by substrate engineering, realizing a decorated stanene sample with truly insulating bulk on Sr‐doped PbTe. This finding paves a road for studies of stanene‐based topological quantum effects and electronics.
- Authors:
-
[3];
- Tsinghua Univ., Beijing (China). State Key Lab. of Low Dimensional Quantum Physics, Dept. of Physics
- Tsinghua Univ., Beijing (China). State Key Lab. of Low Dimensional Quantum Physics, Dept. of Physics; National Univ. of Defense Technology, Changsha (China). College of Optoelectronic Science and Engineering
- Tsinghua Univ., Beijing (China). State Key Lab. of Low Dimensional Quantum Physics, Dept. of Physics; Collaborative Innovation Center of Quantum Matter, Beijing (China)
- Tsinghua Univ., Beijing (China). State Key Lab. of Low Dimensional Quantum Physics, Dept. of Physics; RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama (Japan); Collaborative Innovation Center of Quantum Matter, Beijing (China)
- Stanford Univ., CA (United States). Dept. of Physics
- Publication Date:
- Research Org.:
- SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES); National Natural Science Foundation of China (NSFC); Ministry of Science and Technology of China; Beijing Advanced Innovation Center for Future Chip (ICFC); Tsinghua University Initiative Scientific Research Program; National Thousand‐Young‐Talents Program
- OSTI Identifier:
- 1475572
- Alternate Identifier(s):
- OSTI ID: 1458580
- Grant/Contract Number:
- 51661135024; 2017YFA0303303; AC02-76SF00515; DE‐AC02‐76SF00515
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Advanced Functional Materials
- Additional Journal Information:
- Journal Volume: 28; Journal Issue: 35; Journal ID: ISSN 1616-301X
- Publisher:
- Wiley
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; insulating bandgaps; molecular beam epitaxy; stanene
Citation Formats
Zang, Yunyi, Jiang, Tian, Gong, Yan, Guan, Zhaoyong, Liu, Chong, Liao, Menghan, Zhu, Kejing, Li, Zhe, Wang, Lili, Li, Wei, Song, Canli, Zhang, Ding, Xu, Yong, He, Ke, Ma, Xucun, Zhang, Shou-Cheng, and Xue, Qi-Kun. Realizing an Epitaxial Decorated Stanene with an Insulating Bandgap. United States: N. p., 2018.
Web. doi:10.1002/adfm.201802723.
Zang, Yunyi, Jiang, Tian, Gong, Yan, Guan, Zhaoyong, Liu, Chong, Liao, Menghan, Zhu, Kejing, Li, Zhe, Wang, Lili, Li, Wei, Song, Canli, Zhang, Ding, Xu, Yong, He, Ke, Ma, Xucun, Zhang, Shou-Cheng, & Xue, Qi-Kun. Realizing an Epitaxial Decorated Stanene with an Insulating Bandgap. United States. https://doi.org/10.1002/adfm.201802723
Zang, Yunyi, Jiang, Tian, Gong, Yan, Guan, Zhaoyong, Liu, Chong, Liao, Menghan, Zhu, Kejing, Li, Zhe, Wang, Lili, Li, Wei, Song, Canli, Zhang, Ding, Xu, Yong, He, Ke, Ma, Xucun, Zhang, Shou-Cheng, and Xue, Qi-Kun. Sun .
"Realizing an Epitaxial Decorated Stanene with an Insulating Bandgap". United States. https://doi.org/10.1002/adfm.201802723. https://www.osti.gov/servlets/purl/1475572.
@article{osti_1475572,
title = {Realizing an Epitaxial Decorated Stanene with an Insulating Bandgap},
author = {Zang, Yunyi and Jiang, Tian and Gong, Yan and Guan, Zhaoyong and Liu, Chong and Liao, Menghan and Zhu, Kejing and Li, Zhe and Wang, Lili and Li, Wei and Song, Canli and Zhang, Ding and Xu, Yong and He, Ke and Ma, Xucun and Zhang, Shou-Cheng and Xue, Qi-Kun},
abstractNote = {Abstract The exploration of intriguing topological quantum physics in stanene has attracted enormous interest but is challenged by lacking desirable material samples. The successful fabrication of monolayer stanene on PbTe(111) films with low‐temperature molecular beam epitaxy and thorough characterizations of its atomic and electronic structures are reported here. In situ angle‐resolved photoemission spectroscopy together with first‐principles calculations identify two hole bands of p xy orbital with a spin‐orbit coupling induced band splitting and meanwhile reveal an automatic passivation of p z orbital of stanene. Importantly, material properties are tuned by substrate engineering, realizing a decorated stanene sample with truly insulating bulk on Sr‐doped PbTe. This finding paves a road for studies of stanene‐based topological quantum effects and electronics.},
doi = {10.1002/adfm.201802723},
journal = {Advanced Functional Materials},
number = 35,
volume = 28,
place = {United States},
year = {Sun Jul 01 00:00:00 EDT 2018},
month = {Sun Jul 01 00:00:00 EDT 2018}
}
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