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This content will become publicly available on January 5, 2019

Title: Strain Tuning in Complex Oxide Epitaxial Films Using an Ultrathin Strontium Aluminate Buffer Layer

A reliable method to apply biaxial strain over a wide range of values with minimal dislocation generation is critical for the study of strain dependent physical properties in oxide thin films and heterostructures. In this study, we systematically controlled the strain state in a perovskite manganite thin film by as much as 1% using a new ultrathin strain-releasing buffer layer Sr 3Al 2O 6, and observed signatures of accompanying magnetic and metal–insulator transitions. The near-zero strain state is achieved within five nanometers of buffer layer thickness, substantially thinner than any oxide epitaxial buffer layers that can continuously tune the film strain states. Furthermore, the majority of misfit dislocations were confined to the Sr 3Al 2O 6 layer, structurally decoupling defects in the film from the substrate.
Authors:
ORCiD logo [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [4] ;  [6] ;  [7] ;  [8] ;  [9] ;  [10]
  1. Stanford Univ., CA (United States). Dept. of Physics
  2. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES)
  3. Cornell Univ., Ithaca, NY (United States). School of Electrical and Computer Engineering
  4. Stanford Univ., CA (United States). Dept. of Applied Physics
  5. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Univ. of Tokyo (Japan). Dept. of Advanced Materials Science
  6. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Univ. of Tokyo (Japan). Dept. of Materials Engineering
  7. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Bristol Univ. (United Kingdom). H.H. Wills Physics Lab.
  8. Stanford Univ., CA (United States). Stanford Nano Shared Facilities
  9. Cornell Univ., Ithaca, NY (United States). School of Applied and Engineering Physics and Kavli Inst. at Cornell for Nanoscale Science
  10. SLAC National Accelerator Lab., Menlo Park, CA (United States). Stanford Institute for Materials and Energy Science (SIMES); Stanford Univ., CA (United States). Dept. of Applied Physics
Publication Date:
Grant/Contract Number:
AC02-76SF00515; DGE-114747; DMR-1120296; GBMF4415
Type:
Accepted Manuscript
Journal Name:
Physica Status Solidi rrl
Additional Journal Information:
Journal Volume: 12; Journal Issue: 3; Journal ID: ISSN 1862-6254
Research Org:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; Gordon and Betty Moore Foundation; National Science Foundation (NSF)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; buffer layers; epitaxy; oxides; Sr3Al2O6; strain control; strain relaxation
OSTI Identifier:
1457702