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Title: Modeling the impact of radiation-enhanced diffusion on implanted ion profiles

Abstract

We report that ion irradiations are a valuable research tool for exploring radiation effects in materials. However, it is well recognized that the implanted ions can artificially modify the radiation damage evolution, e.g., enhancing amorphization processes at low irradiation temperatures and suppressing void swelling at elevated temperatures. Therefore, the implanted ion region should be avoided for most studies of ion irradiated materials. Due to increased interest in high damage, high temperature ion irradiations studying radiation effects in materials for proposed high dose Generation IV fission and fusion energy applications, it is crucial to quantify the extent of diffusional broadening of the implanted ion profile for a variety of temperatures, irradiation fluxes, and sink strengths. The present study summarizes computational analyses of thermal and depth-dependent radiation enhanced difusion (RED) on diffusion broadening of the implanted ion profiles in Fe and Ni for a variety of irradiation conditions. For a low assumed RED coefficient (10 -20-10 -19 m 2/s and 10 -4 and 10 -3 peak dpa/s, respectively) or high flux, broadening of the as-implanted ion profile is very small and a suitable artifact-free midrange region for analysis exists for ion energies above 5-6 MeV at 100 peak dpa. At high REDmore » coefficients (10 -19-10 -18 m 2/s and 10 -4 and 10 -3 peak dpa/s, respectively) broadening is much more significant, and no valid region for investigation exists below 6-8 MeV ion energies at any damage level >50 dpa. While increasing flux decreases irradiation time, it also increases the RED coefficient; these effects mostly offset except under recombination-dominant conditions. For typical high dose irradiation studies of void swelling that exceed ~100 displacement per atom (dpa), ion energies > 6-8 MeV must be employed in order to achieve suitable artifact-free midrange irradiation analysis regions, depending on the material system. Lastly, analysis of amorphization/precipitation require even higher energies (>10 MeV).« less

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2]
  1. Univ. of Tennessee, Knoxville, TN (United States). Department of Nuclear Engineering
  2. Univ. of Tennessee, Knoxville, TN (United States). Department of Nuclear Engineering; Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Univ. of Tennessee, Knoxville, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Fusion Energy Sciences (FES) (SC-24); USDOE Office of Nuclear Energy (NE)
OSTI Identifier:
1457548
Alternate Identifier(s):
OSTI ID: 1495284
Grant/Contract Number:  
SC0006661; NNX15AQ35H
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Nuclear Materials
Additional Journal Information:
Journal Volume: 509; Journal Issue: C; Journal ID: ISSN 0022-3115
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
07 ISOTOPE AND RADIATION SOURCES; 22 GENERAL STUDIES OF NUCLEAR REACTORS; Radiation-enhanced diffusion; ion implantation profile; radiation effects; modeling; SRIM; high-dpa; injected interstitials

Citation Formats

Doyle, Peter James, Benensky, Kelsa Marie, and Zinkle, Steven John. Modeling the impact of radiation-enhanced diffusion on implanted ion profiles. United States: N. p., 2018. Web. doi:10.1016/j.jnucmat.2018.06.042.
Doyle, Peter James, Benensky, Kelsa Marie, & Zinkle, Steven John. Modeling the impact of radiation-enhanced diffusion on implanted ion profiles. United States. doi:10.1016/j.jnucmat.2018.06.042.
Doyle, Peter James, Benensky, Kelsa Marie, and Zinkle, Steven John. Sat . "Modeling the impact of radiation-enhanced diffusion on implanted ion profiles". United States. doi:10.1016/j.jnucmat.2018.06.042. https://www.osti.gov/servlets/purl/1457548.
@article{osti_1457548,
title = {Modeling the impact of radiation-enhanced diffusion on implanted ion profiles},
author = {Doyle, Peter James and Benensky, Kelsa Marie and Zinkle, Steven John},
abstractNote = {We report that ion irradiations are a valuable research tool for exploring radiation effects in materials. However, it is well recognized that the implanted ions can artificially modify the radiation damage evolution, e.g., enhancing amorphization processes at low irradiation temperatures and suppressing void swelling at elevated temperatures. Therefore, the implanted ion region should be avoided for most studies of ion irradiated materials. Due to increased interest in high damage, high temperature ion irradiations studying radiation effects in materials for proposed high dose Generation IV fission and fusion energy applications, it is crucial to quantify the extent of diffusional broadening of the implanted ion profile for a variety of temperatures, irradiation fluxes, and sink strengths. The present study summarizes computational analyses of thermal and depth-dependent radiation enhanced difusion (RED) on diffusion broadening of the implanted ion profiles in Fe and Ni for a variety of irradiation conditions. For a low assumed RED coefficient (10-20-10-19 m2/s and 10-4 and 10-3 peak dpa/s, respectively) or high flux, broadening of the as-implanted ion profile is very small and a suitable artifact-free midrange region for analysis exists for ion energies above 5-6 MeV at 100 peak dpa. At high RED coefficients (10-19-10-18 m2/s and 10-4 and 10-3 peak dpa/s, respectively) broadening is much more significant, and no valid region for investigation exists below 6-8 MeV ion energies at any damage level >50 dpa. While increasing flux decreases irradiation time, it also increases the RED coefficient; these effects mostly offset except under recombination-dominant conditions. For typical high dose irradiation studies of void swelling that exceed ~100 displacement per atom (dpa), ion energies > 6-8 MeV must be employed in order to achieve suitable artifact-free midrange irradiation analysis regions, depending on the material system. Lastly, analysis of amorphization/precipitation require even higher energies (>10 MeV).},
doi = {10.1016/j.jnucmat.2018.06.042},
journal = {Journal of Nuclear Materials},
number = C,
volume = 509,
place = {United States},
year = {2018},
month = {6}
}

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