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Title: Dielectric properties of amorphous Ta-Ge-O and Ta-Si-O thin films

Authors:
 [1] ;  [1]
  1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Publication Date:
Grant/Contract Number:
FG02-06ER06-15
Type:
Publisher's Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Name: Journal of Applied Physics Journal Volume: 123 Journal Issue: 24; Journal ID: ISSN 0021-8979
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1457478

Naoi, T. A., and van Dover, R. B.. Dielectric properties of amorphous Ta-Ge-O and Ta-Si-O thin films. United States: N. p., Web. doi:10.1063/1.5022336.
Naoi, T. A., & van Dover, R. B.. Dielectric properties of amorphous Ta-Ge-O and Ta-Si-O thin films. United States. doi:10.1063/1.5022336.
Naoi, T. A., and van Dover, R. B.. 2018. "Dielectric properties of amorphous Ta-Ge-O and Ta-Si-O thin films". United States. doi:10.1063/1.5022336.
@article{osti_1457478,
title = {Dielectric properties of amorphous Ta-Ge-O and Ta-Si-O thin films},
author = {Naoi, T. A. and van Dover, R. B.},
abstractNote = {},
doi = {10.1063/1.5022336},
journal = {Journal of Applied Physics},
number = 24,
volume = 123,
place = {United States},
year = {2018},
month = {6}
}

Works referenced in this record:

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
journal, July 2011
  • Lee, Myoung-Jae; Lee, Chang Bum; Lee, Dongsoo
  • Nature Materials, Vol. 10, Issue 8, p. 625-630
  • DOI: 10.1038/nmat3070