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Title: Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure

Abstract

Here, we demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si0.8Ge0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ~2% in the sensor current.

Authors:
ORCiD logo [1];  [1];  [2];  [1];  [1]
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  1. National Research Council of Canada, Ottawa, ON (Canada)
  2. National Research Council of Canada, Ottawa, ON (Canada); Tohoku Univ., Miyagi (Japan)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1457184
Report Number(s):
SAND-2017-13809J
Journal ID: ISSN 0003-6951; 659682
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 23; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE

Citation Formats

Studenikin, S. A., Gaudreau, L., Kataoka, K., Austing, D. G., and Sachrajda, A. S. Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure. United States: N. p., 2018. Web. doi:10.1063/1.5023596.
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Studenikin, S. A., Gaudreau, L., Kataoka, K., Austing, D. G., & Sachrajda, A. S. Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure. United States. https://doi.org/10.1063/1.5023596
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Studenikin, S. A., Gaudreau, L., Kataoka, K., Austing, D. G., and Sachrajda, A. S. Mon . "Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure". United States. https://doi.org/10.1063/1.5023596. https://www.osti.gov/servlets/purl/1457184.
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@article{osti_1457184,
title = {Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure},
author = {Studenikin, S. A. and Gaudreau, L. and Kataoka, K. and Austing, D. G. and Sachrajda, A. S.},
abstractNote = {Here, we demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si0.8Ge0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ~2% in the sensor current.},
doi = {10.1063/1.5023596},
journal = {Applied Physics Letters},
number = 23,
volume = 112,
place = {United States},
year = {Mon Jun 04 00:00:00 EDT 2018},
month = {Mon Jun 04 00:00:00 EDT 2018}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1063/1.5023596
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Cited by: 6 works
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Figures / Tables:

FIG. 1 FIG. 1: (a) SEM image of first device. Ti/Au gates on top of the Si/SiGe substrate are labelled UL, UC, UR, AGU, LL, LC, LR, and AGL. Ohmic contact regions in which dopants are implanted are indicated by blue squares. In the coupled triple quantum dot mode of operation currentmore » IU is measured through the upper channel coupled quantum dots (depicted as red and green circles). They are tunnel coupled to the lower channel single quantum dot (pink circle) which is energized even though the lower channel is non-conducting, i.e., VAGL is below threshold. (b) Charge stability diagram in the VUR-VUL plane at 0.3 K for VLC=0 V. Solid red, green, and pink guide lines respectively indicate distinctive slopes of addition lines attributed to the upper left, upper right, and lower quantum dots. Three regions revealing anti-crossing behavior between each pair of quantum dots are circled. The bias (source-drain voltage) applied across the upper channel is 25 μV. Fixed gate voltages are: VUC=-0.03 V, VAGU=+0.65 V, VLL=VLR=0 V, and VAGL=+0.5 V.« less
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    Works referencing / citing this record:

    Capillary-driven elastic attraction between quantum dots
    journal, January 2019

    • Liu, Kailang; Berbezier, Isabelle; Favre, Luc
    • Nanoscale, Vol. 11, Issue 16
    • DOI: 10.1039/c9nr00238c

    Quantum dots with split enhancement gate tunnel barrier control
    journal, February 2019

    • Rochette, S.; Rudolph, M.; Roy, A. -M.
    • Applied Physics Letters, Vol. 114, Issue 8
    • DOI: 10.1063/1.5091111

    Applied Physics Letters welcomes papers in Quantum Technologies
    journal, January 2020

    Single and double hole quantum dots in strained Ge/SiGe quantum wells
    journal, March 2019

    Spin-Blockade Spectroscopy of Si / Si - Ge Quantum Dots
    journal, July 2019

    Single and Double Hole Quantum Dots in Strained Ge/SiGe Quantum Wells
    text, January 2018

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      FIG. 1 (p. 11)figure
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