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Title: Enhancement-mode two-channel triple quantum dot from an undoped Si/Si 0.8Ge 0.2 quantum well hetero-structure

Here, we demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si 0.8Ge 0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ~2% in the sensor current.
Authors:
ORCiD logo [1] ;  [1] ;  [2] ;  [1] ;  [1]
  1. National Research Council of Canada, Ottawa, ON (Canada)
  2. National Research Council of Canada, Ottawa, ON (Canada); Tohoku Univ., Miyagi (Japan)
Publication Date:
Report Number(s):
SAND-2017-13809J
Journal ID: ISSN 0003-6951; 659682
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 23; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 36 MATERIALS SCIENCE
OSTI Identifier:
1457184

Studenikin, S. A., Gaudreau, L., Kataoka, K., Austing, D. G., and Sachrajda, A. S.. Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure. United States: N. p., Web. doi:10.1063/1.5023596.
Studenikin, S. A., Gaudreau, L., Kataoka, K., Austing, D. G., & Sachrajda, A. S.. Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure. United States. doi:10.1063/1.5023596.
Studenikin, S. A., Gaudreau, L., Kataoka, K., Austing, D. G., and Sachrajda, A. S.. 2018. "Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure". United States. doi:10.1063/1.5023596.
@article{osti_1457184,
title = {Enhancement-mode two-channel triple quantum dot from an undoped Si/Si0.8Ge0.2 quantum well hetero-structure},
author = {Studenikin, S. A. and Gaudreau, L. and Kataoka, K. and Austing, D. G. and Sachrajda, A. S.},
abstractNote = {Here, we demonstrate coupled triple dot operation and charge sensing capability for the recently introduced quantum dot technology employing undoped Si/Si0.8Ge0.2 hetero-structures which also incorporate a single metal-gate layer to simplify fabrication. Si/SiGe hetero-structures with a Ge concentration of 20% rather than the more usual 30% typically encountered offer higher electron mobility. The devices consist of two in-plane parallel electron channels that host a double dot in one channel and a single dot in the other channel. In a device where the channels are sufficiently close a triple dot in a triangular configuration is induced leading to regions in the charge stability diagram where three charge-addition lines of different slope approach each other and anti-cross. In a device where the channels are further apart, the single dot charge-senses the double dot with relative change of ~2% in the sensor current.},
doi = {10.1063/1.5023596},
journal = {Applied Physics Letters},
number = 23,
volume = 112,
place = {United States},
year = {2018},
month = {6}
}