Carrier scattering mechanisms limiting mobility in hydrogen-doped indium oxide

Husein, Sebastian; Stuckelberger, Michael; West, Bradley; Ding, Laura; Dauzou, Fabien; Morales-Masis, Monica; Duchamp, Martial; Holman, Zachary; Bertoni, Mariana I.

doi:10.1063/1.5033561

Title: Carrier scattering mechanisms limiting mobility in hydrogen-doped indium oxide

Authors:

^[1];

^[1]; West, Bradley ^[1]; Ding, Laura ^[2]; Dauzou, Fabien ^[3];

^[3];

^[4]; Holman, Zachary ^[1];

^[1]

Ira A. Fulton Schools of Engineering, Arizona State University, 551 E. Tyler Mall, Tempe, Arizona 85287, USA
Centre Suisse d'Electronique et de Microtechnique (CSEM), Rue Jaquet-Droz 1, 2002 Neuchâtel, Switzerland
Photovoltaics and Thin Film Electronics Laboratory, Institute of Microengineering, École Polytechnique Fédérale de Lausanne, Rue de la Maladière 71b, 2002 Neuchâtel 2, Switzerland
Peter Grunberg Institut, Forschungzentrum Jülich PGI 5, Ernst Ruska Centre for Microscopy and Spectroscopy with Electrons, 52425 Jülich, Germany

Publication Date:: 2018-06-28

Sponsoring Org.:: USDOE

OSTI Identifier:: 1457091

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Journal of Applied Physics

Additional Journal Information:: Journal Name: Journal of Applied Physics Journal Volume: 123 Journal Issue: 24; Journal ID: ISSN 0021-8979

Publisher:: American Institute of Physics

Country of Publication:: United States

Language:: English

Citation Formats


                    Husein, Sebastian, Stuckelberger, Michael, West, Bradley, Ding, Laura, Dauzou, Fabien, Morales-Masis, Monica, Duchamp, Martial, Holman, Zachary, and Bertoni, Mariana I. Carrier scattering mechanisms limiting mobility in hydrogen-doped indium oxide.  United States: N. p., 2018. 
Web.  doi:10.1063/1.5033561.

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                    Husein, Sebastian, Stuckelberger, Michael, West, Bradley, Ding, Laura, Dauzou, Fabien, Morales-Masis, Monica, Duchamp, Martial, Holman, Zachary, & Bertoni, Mariana I. Carrier scattering mechanisms limiting mobility in hydrogen-doped indium oxide.  United States.  https://doi.org/10.1063/1.5033561

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                    Husein, Sebastian, Stuckelberger, Michael, West, Bradley, Ding, Laura, Dauzou, Fabien, Morales-Masis, Monica, Duchamp, Martial, Holman, Zachary, and Bertoni, Mariana I. Thu .  
"Carrier scattering mechanisms limiting mobility in hydrogen-doped indium oxide".  United States.  https://doi.org/10.1063/1.5033561.

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@article{osti_1457091,

  title        = {Carrier scattering mechanisms limiting mobility in hydrogen-doped indium oxide},

  author       = {Husein, Sebastian and Stuckelberger, Michael and West, Bradley and Ding, Laura and Dauzou, Fabien and Morales-Masis, Monica and Duchamp, Martial and Holman, Zachary and Bertoni, Mariana I.},

  abstractNote = {},

  doi          = {10.1063/1.5033561},

  journal      = {Journal of Applied Physics},

  number       = 24,

  volume       = 123,

  place        = {United States},

  year         = {2018},

  month        = {6}

}

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Title: Carrier scattering mechanisms limiting mobility in hydrogen-doped indium oxide

Citation Formats

Transparent Conducting Oxides for Photovoltaics journal, March 2007

22.5% efficient silicon heterojunction solar cell with molybdenum oxide hole collector journal, August 2015

Electrical transport, electrothermal transport, and effective electron mass in single-crystalline In 2 O 3 films journal, August 2013

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Analytic approximations for the Fermi energy of an ideal Fermi gas
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journal, November 1966

Zur Elektronentheorie der Metalle
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A review of piezoelectric polymers as functional materials for electromechanical transducers
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Scattering of charge carriers in transparent and conducting thin oxide films with a non-parabolic conduction band
journal, July 1989

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journal, May 1996

Untersuchungen der elektrischen und lichtelektrischen Leitf�higkeit d�nner Indiumoxydschichten
journal, October 1954

Carrier transport in polycrystalline transparent conductive oxides: A comparative study of zinc oxide and indium oxide
journal, May 2008

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journal, May 1996

XCIV. Scattering of electrons and holes by charged donors and acceptors in semiconductors
journal, August 1955

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