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Title: Strongly Cavity-Enhanced Spontaneous Emission from Silicon-Vacancy Centers in Diamond

Abstract

Quantum emitters are an integral component for a broad range of quantum technologies, including quantum communication, quantum repeaters, and linear optical quantum computation. Solid-state color centers are promising candidates for scalable quantum optics due to their long coherence time and small inhomogeneous broadening. However, once excited, color centers often decay through phonon-assisted processes, limiting the efficiency of single-photon generation and photon-mediated entanglement generation. Herein, we demonstrate strong enhancement of spontaneous emission rate of a single silicon-vacancy center in diamond embedded within a monolithic optical cavity, reaching a regime in which the excited-state lifetime is dominated by spontaneous emission into the cavity mode. We observe 10-fold lifetime reduction and 42-fold enhancement in emission intensity when the cavity is tuned into resonance with the optical transition of a single silicon-vacancy center, corresponding to 90% of the excited-state energy decay occurring through spontaneous emission into the cavity mode. Here, we also demonstrate the largest coupling strength (g/2π = 4.9 ± 0.3 GHz) and cooperativity (C = 1.4) to date for color-center-based cavity quantum electrodynamics systems, bringing the system closer to the strong coupling regime.

Authors:
ORCiD logo [1];  [1];  [2];  [1]; ORCiD logo [1];  [1];  [1];  [1]; ORCiD logo [1];  [3];  [3];  [1];  [2];  [1]
  1. Stanford Univ., Stanford, CA (United States)
  2. Harvard Univ., Cambridge, MA (United States)
  3. Stanford Univ., Stanford, CA (United States); SLAC National Accelerator Lab., Menlo Park, CA (United States)
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1457052
Grant/Contract Number:  
EFRI-5710004174; W911NF1310309; N00014-15-1-2761; AC02-76SF00515
Resource Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 18; Journal Issue: 2; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; color center; defect-center materials; diamond; nanophotonics; Purcell enhancement; silicon-vacancy center; single-photon generation

Citation Formats

Zhang, Jingyuan Linda, Sun, Shuo, Burek, Michael J., Dory, Constantin, Tzeng, Yan -Kai, Fischer, Kevin A., Kelaita, Yousif, Lagoudakis, Konstantinos G., Radulaski, Marina, Shen, Zhi -Xun, Melosh, Nicholas A., Chu, Steven, Loncar, Marko, and Vuckovic, Jelena. Strongly Cavity-Enhanced Spontaneous Emission from Silicon-Vacancy Centers in Diamond. United States: N. p., 2018. Web. https://doi.org/10.1021/acs.nanolett.7b05075.
Zhang, Jingyuan Linda, Sun, Shuo, Burek, Michael J., Dory, Constantin, Tzeng, Yan -Kai, Fischer, Kevin A., Kelaita, Yousif, Lagoudakis, Konstantinos G., Radulaski, Marina, Shen, Zhi -Xun, Melosh, Nicholas A., Chu, Steven, Loncar, Marko, & Vuckovic, Jelena. Strongly Cavity-Enhanced Spontaneous Emission from Silicon-Vacancy Centers in Diamond. United States. https://doi.org/10.1021/acs.nanolett.7b05075
Zhang, Jingyuan Linda, Sun, Shuo, Burek, Michael J., Dory, Constantin, Tzeng, Yan -Kai, Fischer, Kevin A., Kelaita, Yousif, Lagoudakis, Konstantinos G., Radulaski, Marina, Shen, Zhi -Xun, Melosh, Nicholas A., Chu, Steven, Loncar, Marko, and Vuckovic, Jelena. Mon . "Strongly Cavity-Enhanced Spontaneous Emission from Silicon-Vacancy Centers in Diamond". United States. https://doi.org/10.1021/acs.nanolett.7b05075. https://www.osti.gov/servlets/purl/1457052.
@article{osti_1457052,
title = {Strongly Cavity-Enhanced Spontaneous Emission from Silicon-Vacancy Centers in Diamond},
author = {Zhang, Jingyuan Linda and Sun, Shuo and Burek, Michael J. and Dory, Constantin and Tzeng, Yan -Kai and Fischer, Kevin A. and Kelaita, Yousif and Lagoudakis, Konstantinos G. and Radulaski, Marina and Shen, Zhi -Xun and Melosh, Nicholas A. and Chu, Steven and Loncar, Marko and Vuckovic, Jelena},
abstractNote = {Quantum emitters are an integral component for a broad range of quantum technologies, including quantum communication, quantum repeaters, and linear optical quantum computation. Solid-state color centers are promising candidates for scalable quantum optics due to their long coherence time and small inhomogeneous broadening. However, once excited, color centers often decay through phonon-assisted processes, limiting the efficiency of single-photon generation and photon-mediated entanglement generation. Herein, we demonstrate strong enhancement of spontaneous emission rate of a single silicon-vacancy center in diamond embedded within a monolithic optical cavity, reaching a regime in which the excited-state lifetime is dominated by spontaneous emission into the cavity mode. We observe 10-fold lifetime reduction and 42-fold enhancement in emission intensity when the cavity is tuned into resonance with the optical transition of a single silicon-vacancy center, corresponding to 90% of the excited-state energy decay occurring through spontaneous emission into the cavity mode. Here, we also demonstrate the largest coupling strength (g/2π = 4.9 ± 0.3 GHz) and cooperativity (C = 1.4) to date for color-center-based cavity quantum electrodynamics systems, bringing the system closer to the strong coupling regime.},
doi = {10.1021/acs.nanolett.7b05075},
journal = {Nano Letters},
number = 2,
volume = 18,
place = {United States},
year = {2018},
month = {1}
}

Journal Article:
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Cited by: 13 works
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Figures / Tables:

Figure 1 Figure 1: High-Q nanobeam photonic crystal cavity. (a) Scanning electron microscopy (SEM) images of a nanobeam photonic crystal (PhC) cavity fabricated from single crystal diamond, with the inset showing the angled-view of the cavity region. Scale bars in (a) and the inset: 5 μm and 1 μm respectively. (b) Electricmore » field intensity profile of the fundamental cavity mode of the photonic crystal cavity. (c) Cross-sectional electric field intensity profile of the fundamental cavity mode of the photonic crystal cavity, taken at the center plane in the x-direction. (d) Low temperature photoluminescence (PL) spectrum of a SiV center and the cavity mode. The four narrow lines correspond to the four optical transitions of a SiV, as shown by the double arrows in the level structure in the inset. The cavity mode is blue-detuned from the SiV emission at ~ 734.5 nm.« less

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