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Title: Effect of strain and thickness on the transition temperature of epitaxial FeRh thin-films

Abstract

The separate effects of strain and film thickness on the antiferromagnetic-to-ferromagnetic phase transition temperature of FeRh thin films by both experiment and density functional calculations were determined. Strain was introduced by epitaxial growth onto MgO, SrTiO 3, and KTaO 3 substrates. Film thicknesses below 15 nm substantially suppress the transition temperature, T, to below room temperature in unstrained films. For strained films, tensile/compressive strain decreases/increases T, respectively. KTaO 3(001) substrates produce sufficient compressive strain to increase the transition temperature of 10 nm FeRh films above room temperature, which is useful for many proposed applications previously limited by the stabilization of the ferromagnetic state at small thicknesses. These results demonstrate that a judicious use of film thickness and substrate can be used to manipulate FeRh's transition temperature over a ~200 K range.

Authors:
 [1];  [2]; ORCiD logo [2];  [2];  [2];  [3]
  1. Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Engineering
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division
  3. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Univ. of California, Berkeley, CA (United States). Dept. of Physics
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; USDOE
OSTI Identifier:
1456979
Alternate Identifier(s):
OSTI ID: 1402102
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 17; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Ceballos, A., Chen, Zhanghui, Schneider, O., Bordel, C., Wang, Lin-Wang, and Hellman, F. Effect of strain and thickness on the transition temperature of epitaxial FeRh thin-films. United States: N. p., 2017. Web. doi:10.1063/1.4997901.
Ceballos, A., Chen, Zhanghui, Schneider, O., Bordel, C., Wang, Lin-Wang, & Hellman, F. Effect of strain and thickness on the transition temperature of epitaxial FeRh thin-films. United States. doi:10.1063/1.4997901.
Ceballos, A., Chen, Zhanghui, Schneider, O., Bordel, C., Wang, Lin-Wang, and Hellman, F. Mon . "Effect of strain and thickness on the transition temperature of epitaxial FeRh thin-films". United States. doi:10.1063/1.4997901. https://www.osti.gov/servlets/purl/1456979.
@article{osti_1456979,
title = {Effect of strain and thickness on the transition temperature of epitaxial FeRh thin-films},
author = {Ceballos, A. and Chen, Zhanghui and Schneider, O. and Bordel, C. and Wang, Lin-Wang and Hellman, F.},
abstractNote = {The separate effects of strain and film thickness on the antiferromagnetic-to-ferromagnetic phase transition temperature of FeRh thin films by both experiment and density functional calculations were determined. Strain was introduced by epitaxial growth onto MgO, SrTiO3, and KTaO3 substrates. Film thicknesses below 15 nm substantially suppress the transition temperature, T, to below room temperature in unstrained films. For strained films, tensile/compressive strain decreases/increases T, respectively. KTaO3(001) substrates produce sufficient compressive strain to increase the transition temperature of 10 nm FeRh films above room temperature, which is useful for many proposed applications previously limited by the stabilization of the ferromagnetic state at small thicknesses. These results demonstrate that a judicious use of film thickness and substrate can be used to manipulate FeRh's transition temperature over a ~200 K range.},
doi = {10.1063/1.4997901},
journal = {Applied Physics Letters},
number = 17,
volume = 111,
place = {United States},
year = {2017},
month = {10}
}

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Cited by: 3 works
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