Evolution of Metastable Defects and Its Effect on the Electronic Properties of MoS2 Films

Precner, Marian; Polakovic, T.; Qiao, Qiao; Trainer, D. J.; Putilov, A. V.; Di Giorgio, C.; Cone, I.; Zhu, Y.; Xi, X. X.; Iavarone, M.; Karapetrov, G.

doi:10.1038/s41598-018-24913-y

Title: Evolution of Metastable Defects and Its Effect on the Electronic Properties of MoS₂ Films

Journal Article · 30 April 2018 · Scientific Reports

DOI: https://doi.org/10.1038/s41598-018-24913-y · OSTI ID:1456903

Precner, Marian ^[1]; Polakovic, T. ^[2];

^[3]; Trainer, D. J. ^[4]; Putilov, A. V. ^[5]; Di Giorgio, C. ^[6]; Cone, I. ^[7]; Zhu, Y. ^[8]; Xi, X. X. ^[4]; Iavarone, M. ^[4];

^[2]

Drexel Univ., Philadelphia, PA (United States); Slovak Academy of Sciences, Bratislava (Slovak Republic)
Drexel Univ., Philadelphia, PA (United States)
Temple Univ., Philadelphia, PA (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)
Temple Univ., Philadelphia, PA (United States)
Temple Univ., Philadelphia, PA (United States); Institute for Physics of Microstructure RAS, Novgorod (Russia)
Temple Univ., Philadelphia, PA (United States); Univ. of Salerno, Fisciano (SA) (Italy)
Temple Univ., Philadelphia, PA (United States); Univ. of San Francisco, San Francisco, CA (United States)
Brookhaven National Lab. (BNL), Upton, NY (United States)

Here, we report on structural and electronic properties of defects in chemical vapor-deposited monolayer and few-layer MoS₂ films. Scanning tunneling microscopy, Kelvin probe force microscopy, and transmission electron microscopy were used to obtain high resolution images and quantitative measurements of the local density of states, work function and nature of defects in MoS₂ films. We track the evolution of defects that are formed under heating and electron beam irradiation. We observe formation of metastable domains with different work function values after annealing the material in ultra-high vacuum to moderate temperatures. We attribute these metastable values of the work function to evolution of crystal defects forming during the annealing. The experiments show that sulfur vacancies formed after exposure to elevated temperatures diffuse, coalesce, and migrate bringing the system from a metastable to equilibrium ground state. The process could be thermally or e-beam activated with estimated energy barrier for sulfur vacancy migration of 0.6 eV in single unit cell MoS₂. Even at equilibrium conditions, the work function and local density of states values are strongly affected near grain boundaries and edges. The results provide initial estimates of the thermal budgets available for reliable fabrication of MoS₂-based integrated electronics and indicate the importance of defect control and layer passivation.

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Research Organization:: Energy Frontier Research Centers (EFRC) (United States). Center for Complex Materials from First Principles (CCM); Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: SC0012704

OSTI ID:: 1456903

Report Number(s):: BNL--205792-2018-JAAM

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Journal Issue: 1 Vol. 8; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

References (85)

Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature Li, Hai; Yin, Zongyou; He, Qiyuan Small, Vol. 8, Issue 1 https://doi.org/10.1002/smll.201101016	journal	October 2011
Defect structure and electrical properties of molybdenum disulphide Potoczek, M.; Przybylski, K.; Rekas, M. Journal of Physics and Chemistry of Solids, Vol. 67, Issue 12 https://doi.org/10.1016/j.jpcs.2006.07.008	journal	December 2006
Chemical diffusion in molybdenum disulphide Potoczek, M.; Przybylski, K.; Rekas, M. Journal of Physics and Chemistry of Solids, Vol. 68, Issue 4 https://doi.org/10.1016/j.jpcs.2007.01.029	journal	April 2007
Point Defects and Grain Boundaries in Rotationally Commensurate MoS ₂ on Epitaxial Graphene Liu, Xiaolong; Balla, Itamar; Bergeron, Hadallia The Journal of Physical Chemistry C, Vol. 120, Issue 37 https://doi.org/10.1021/acs.jpcc.6b02073	journal	March 2016
Environment-Controlled Dislocation Migration and Superplasticity in Monolayer MoS ₂ Zou, Xiaolong; Liu, Mingjie; Shi, Zhiming Nano Letters, Vol. 15, Issue 5 https://doi.org/10.1021/acs.nanolett.5b00864	journal	April 2015
Electrical and Optical Characterization of MoS ₂ with Sulfur Vacancy Passivation by Treatment with Alkanethiol Molecules Cho, Kyungjune; Min, Misook; Kim, Tae-Young ACS Nano, Vol. 9, Issue 8 https://doi.org/10.1021/acsnano.5b04400	journal	July 2015
Structural Characterization and Thermal Stability of MoS ₂ Intercalation Compounds Dungey, Keenan E.; Curtis, M. David; Penner-Hahn, James E. Chemistry of Materials, Vol. 10, Issue 8 https://doi.org/10.1021/cm980034u	journal	August 1998
Preparation and Characterization of a New Crystalline Form of Molybdenum Disulfide Bell, Ronald E.; Herfert, Robert E. Journal of the American Chemical Society, Vol. 79, Issue 13 https://doi.org/10.1021/ja01570a012	journal	July 1957
Bandgap, Mid-Gap States, and Gating Effects in MoS ₂ Lu, Chih-Pin; Li, Guohong; Mao, Jinhai Nano Letters, Vol. 14, Issue 8 https://doi.org/10.1021/nl501659n	journal	July 2014
Coherent Atomic and Electronic Heterostructures of Single-Layer MoS₂ Eda, Goki; Fujita, Takeshi; Yamaguchi, Hisato ACS Nano, Vol. 6, Issue 8, p. 7311-7317 https://doi.org/10.1021/nn302422x	journal	July 2012
Defect-Dominated Doping and Contact Resistance in MoS ₂ McDonnell, Stephen; Addou, Rafik; Buie, Creighton ACS Nano, Vol. 8, Issue 3 https://doi.org/10.1021/nn500044q	journal	February 2014
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets Chhowalla, Manish; Shin, Hyeon Suk; Eda, Goki Nature Chemistry, Vol. 5, Issue 4, p. 263-275 https://doi.org/10.1038/nchem.1589	journal	April 2013
Exploring atomic defects in molybdenum disulphide monolayers Hong, Jinhua; Hu, Zhixin; Probert, Matt Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms7293	journal	February 2015
Bandgap tunability at single-layer molybdenum disulphide grain boundaries Huang, Yu Li; Chen, Yifeng; Zhang, Wenjing Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms7298	journal	February 2015
Single-layer MoS₂ transistors Radisavljevic, B.; Radenovic, A.; Brivio, J. Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150 https://doi.org/10.1038/nnano.2010.279	journal	January 2011
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712 https://doi.org/10.1038/nnano.2012.193	journal	November 2012
Ultrasensitive photodetectors based on monolayer MoS2 Lopez-Sanchez, Oriol; Lembke, Dominik; Kayci, Metin Nature Nanotechnology, Vol. 8, Issue 7 https://doi.org/10.1038/nnano.2013.100	journal	June 2013
Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2 Lin, Yung-Chang; Dumcenco, Dumitru O.; Huang, Ying-Sheng Nature Nanotechnology, Vol. 9, Issue 5 https://doi.org/10.1038/nnano.2014.64	journal	April 2014
Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS2 Films Yu, Yifei; Li, Chun; Liu, Yi Scientific Reports, Vol. 3, Issue 1 https://doi.org/10.1038/srep01866	journal	May 2013
Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2 Trainer, Daniel J.; Putilov, Aleksei V.; Di Giorgio, Cinzia Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/srep40559	journal	January 2017
High-sensitivity quantitative Kelvin probe microscopy by noncontact ultra-high-vacuum atomic force microscopy Sommerhalter, Ch.; Matthes, Th. W.; Glatzel, Th. Applied Physics Letters, Vol. 75, Issue 2 https://doi.org/10.1063/1.124357	journal	July 1999
Vacuum ultraviolet radiation effects on two-dimensional MoS ₂ field-effect transistors McMorrow, Julian J.; Cress, Cory D.; Arnold, Heather N. Applied Physics Letters, Vol. 110, Issue 7 https://doi.org/10.1063/1.4976023	journal	February 2017
Photon-induced selenium migration in TiSe ₂ Lioi, David B.; Gosztola, David J.; Wiederrecht, Gary P. Applied Physics Letters, Vol. 110, Issue 8 https://doi.org/10.1063/1.4976745	journal	February 2017
Systematic study of structural, electronic, and optical properties of atomic-scale defects in the two-dimensional transition metal dichalcogenides M X 2 ( M = Mo , W; X = S , Se, Te) Haldar, Soumyajyoti; Vovusha, Hakkim; Yadav, Manoj Kumar Physical Review B, Vol. 92, Issue 23 https://doi.org/10.1103/physrevb.92.235408	journal	December 2015
One-Dimensional Metallic Edge States in MoS 2 Bollinger, M. V.; Lauritsen, J. V.; Jacobsen, K. W. Physical Review Letters, Vol. 87, Issue 19 https://doi.org/10.1103/physrevlett.87.196803	journal	October 2001
Effect of contaminations and surface preparation on the work function of single layer MoS ₂ Ochedowski, Oliver; Marinov, Kolyo; Scheuschner, Nils Beilstein Journal of Nanotechnology, Vol. 5 https://doi.org/10.3762/bjnano.5.32	journal	January 2014
Scanning Tunneling Spectroscopy of Graphene on Graphite Li, Guohong; Luican, Adina; Andrei, Eva Y. arXiv https://doi.org/10.48550/arxiv.0803.4016	text	January 2008
The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors Ghatak, Subhamoy; Pal, Atindra Nath; Ghosh, Arindam arXiv https://doi.org/10.48550/arxiv.1203.5656	text	January 2012
Electronic properties of graphene: a perspective from scanning tunneling microscopy and magneto-transport Andrei, Eva Y.; Li, Guohong; Du, Xu arXiv https://doi.org/10.48550/arxiv.1204.4532	text	January 2012
Direct imaging of the band profile in single layer ${\small MoS_2}$ on graphite: quasiparticle energy gap, metallic edge states and edge band bending Zhang, Chendong; Johnson, Amber; Hsu, Chang-Lung arXiv https://doi.org/10.48550/arxiv.1401.5100	text	January 2014
Rotationally Commensurate Growth of MoS2 on Epitaxial Graphene Liu, Xiaolong; Balla, Itamar; Bergeron, Hadallia arXiv https://doi.org/10.48550/arxiv.1604.00677	text	January 2016
Transfer current in p-type graphene/MoS2 heterostructures Van Nguyen, Khoe; Lin, Shih-Yen; Chang, Yia-Chung arXiv https://doi.org/10.48550/arxiv.1912.07176	preprint	January 2019
Synthesis of Large-Area MoS₂ Atomic Layers with Chemical Vapor Deposition Lee, Yi-Hsien; Zhang, Xin-Quan; Zhang, Wenjing Advanced Materials, Vol. 24, Issue 17, p. 2320-2325 https://doi.org/10.1002/adma.201104798	journal	March 2012
Indirect Bandgap Puddles in Monolayer MoS ₂ by Substrate-Induced Local Strain Shin, Bong Gyu; Han, Gang Hee; Yun, Seok Joon Advanced Materials, Vol. 28, Issue 42 https://doi.org/10.1002/adma.201602626	journal	September 2016
Fabrication of Single- and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature Li, Hai; Yin, Zongyou; He, Qiyuan Small, Vol. 8, Issue 1 https://doi.org/10.1002/smll.201101016	journal	October 2011
Electrical and optical anisotropic properties of rhenium-doped molybdenum disulphide Tiong, K. K.; Huang, Y. S.; Ho, C. H. Journal of Alloys and Compounds, Vol. 317-318 https://doi.org/10.1016/S0925-8388(00)01327-X	journal	April 2001
Defect structure and electrical properties of molybdenum disulphide Potoczek, M.; Przybylski, K.; Rekas, M. Journal of Physics and Chemistry of Solids, Vol. 67, Issue 12 https://doi.org/10.1016/j.jpcs.2006.07.008	journal	December 2006
Chemical diffusion in molybdenum disulphide Potoczek, M.; Przybylski, K.; Rekas, M. Journal of Physics and Chemistry of Solids, Vol. 68, Issue 4 https://doi.org/10.1016/j.jpcs.2007.01.029	journal	April 2007
Point Defects and Grain Boundaries in Rotationally Commensurate MoS ₂ on Epitaxial Graphene Liu, Xiaolong; Balla, Itamar; Bergeron, Hadallia The Journal of Physical Chemistry C, Vol. 120, Issue 37 https://doi.org/10.1021/acs.jpcc.6b02073	journal	March 2016
Environment-Controlled Dislocation Migration and Superplasticity in Monolayer MoS ₂ Zou, Xiaolong; Liu, Mingjie; Shi, Zhiming Nano Letters, Vol. 15, Issue 5 https://doi.org/10.1021/acs.nanolett.5b00864	journal	April 2015
Electrical and Optical Characterization of MoS ₂ with Sulfur Vacancy Passivation by Treatment with Alkanethiol Molecules Cho, Kyungjune; Min, Misook; Kim, Tae-Young ACS Nano, Vol. 9, Issue 8 https://doi.org/10.1021/acsnano.5b04400	journal	July 2015
Rotationally Commensurate Growth of MoS ₂ on Epitaxial Graphene Liu, Xiaolong; Balla, Itamar; Bergeron, Hadallia ACS Nano, Vol. 10, Issue 1 https://doi.org/10.1021/acsnano.5b06398	journal	November 2015
Raman Shifts in Electron-Irradiated Monolayer MoS ₂ Parkin, William M.; Balan, Adrian; Liang, Liangbo ACS Nano, Vol. 10, Issue 4 https://doi.org/10.1021/acsnano.5b07388	journal	March 2016
Structural Characterization and Thermal Stability of MoS ₂ Intercalation Compounds Dungey, Keenan E.; Curtis, M. David; Penner-Hahn, James E. Chemistry of Materials, Vol. 10, Issue 8 https://doi.org/10.1021/cm980034u	journal	August 1998
Preparation and Characterization of a New Crystalline Form of Molybdenum Disulfide Bell, Ronald E.; Herfert, Robert E. Journal of the American Chemical Society, Vol. 79, Issue 13 https://doi.org/10.1021/ja01570a012	journal	July 1957
Atomic Mechanism of Dynamic Electrochemical Lithiation Processes of MoS ₂ Nanosheets Wang, Lifen; Xu, Zhi; Wang, Wenlong Journal of the American Chemical Society, Vol. 136, Issue 18 https://doi.org/10.1021/ja501686w	journal	April 2014
Direct Imaging of Band Profile in Single Layer MoS ₂ on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending Zhang, Chendong; Johnson, Amber; Hsu, Chang-Lung Nano Letters, Vol. 14, Issue 5 https://doi.org/10.1021/nl501133c	journal	April 2014
Bandgap, Mid-Gap States, and Gating Effects in MoS ₂ Lu, Chih-Pin; Li, Guohong; Mao, Jinhai Nano Letters, Vol. 14, Issue 8 https://doi.org/10.1021/nl501659n	journal	July 2014
Nature of Electronic States in Atomically Thin MoS₂ Field-Effect Transistors Ghatak, Subhamoy; Pal, Atindra Nath; Ghosh, Arindam ACS Nano, Vol. 5, Issue 10, p. 7707-7712 https://doi.org/10.1021/nn202852j	journal	October 2011
Coherent Atomic and Electronic Heterostructures of Single-Layer MoS₂ Eda, Goki; Fujita, Takeshi; Yamaguchi, Hisato ACS Nano, Vol. 6, Issue 8, p. 7311-7317 https://doi.org/10.1021/nn302422x	journal	July 2012
Defect-Dominated Doping and Contact Resistance in MoS ₂ McDonnell, Stephen; Addou, Rafik; Buie, Creighton ACS Nano, Vol. 8, Issue 3 https://doi.org/10.1021/nn500044q	journal	February 2014
Surface-Energy-Assisted Perfect Transfer of Centimeter-Scale Monolayer and Few-Layer MoS ₂ Films onto Arbitrary Substrates Gurarslan, Alper; Yu, Yifei; Su, Liqin ACS Nano, Vol. 8, Issue 11 https://doi.org/10.1021/nn5057673	journal	November 2014
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets Chhowalla, Manish; Shin, Hyeon Suk; Eda, Goki Nature Chemistry, Vol. 5, Issue 4, p. 263-275 https://doi.org/10.1038/nchem.1589	journal	April 2013
Visualizing band offsets and edge states in bilayer–monolayer transition metal dichalcogenides lateral heterojunction Zhang, Chendong; Chen, Yuxuan; Huang, Jing-Kai Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms10349	journal	January 2016
Exploring atomic defects in molybdenum disulphide monolayers Hong, Jinhua; Hu, Zhixin; Probert, Matt Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms7293	journal	February 2015
Bandgap tunability at single-layer molybdenum disulphide grain boundaries Huang, Yu Li; Chen, Yifeng; Zhang, Wenjing Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms7298	journal	February 2015
Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers Najmaei, Sina; Liu, Zheng; Zhou, Wu Nature Materials, Vol. 12, Issue 8, p. 754-759 https://doi.org/10.1038/nmat3673	journal	June 2013
Single-layer MoS₂ transistors Radisavljevic, B.; Radenovic, A.; Brivio, J. Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150 https://doi.org/10.1038/nnano.2010.279	journal	January 2011
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides Wang, Qing Hua; Kalantar-Zadeh, Kourosh; Kis, Andras Nature Nanotechnology, Vol. 7, Issue 11, p. 699-712 https://doi.org/10.1038/nnano.2012.193	journal	November 2012
Ultrasensitive photodetectors based on monolayer MoS2 Lopez-Sanchez, Oriol; Lembke, Dominik; Kayci, Metin Nature Nanotechnology, Vol. 8, Issue 7 https://doi.org/10.1038/nnano.2013.100	journal	June 2013
Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2 Lin, Yung-Chang; Dumcenco, Dumitru O.; Huang, Ying-Sheng Nature Nanotechnology, Vol. 9, Issue 5 https://doi.org/10.1038/nnano.2014.64	journal	April 2014
Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS2 Films Yu, Yifei; Li, Chun; Liu, Yi Scientific Reports, Vol. 3, Issue 1 https://doi.org/10.1038/srep01866	journal	May 2013
Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2 Trainer, Daniel J.; Putilov, Aleksei V.; Di Giorgio, Cinzia Scientific Reports, Vol. 7, Issue 1 https://doi.org/10.1038/srep40559	journal	January 2017
High-sensitivity quantitative Kelvin probe microscopy by noncontact ultra-high-vacuum atomic force microscopy Sommerhalter, Ch.; Matthes, Th. W.; Glatzel, Th. Applied Physics Letters, Vol. 75, Issue 2 https://doi.org/10.1063/1.124357	journal	July 1999
Erratum: “Edge effects on band gap energy in bilayer 2 H -MoS ₂ under uniaxial strain” [J. Appl. Phys. 117 , 244303 (2015)] Dong, Liang; Wang, Jin; Namburu, Raju Journal of Applied Physics, Vol. 118, Issue 18 https://doi.org/10.1063/1.4935944	journal	November 2015
Vacuum ultraviolet radiation effects on two-dimensional MoS ₂ field-effect transistors McMorrow, Julian J.; Cress, Cory D.; Arnold, Heather N. Applied Physics Letters, Vol. 110, Issue 7 https://doi.org/10.1063/1.4976023	journal	February 2017
Photon-induced selenium migration in TiSe ₂ Lioi, David B.; Gosztola, David J.; Wiederrecht, Gary P. Applied Physics Letters, Vol. 110, Issue 8 https://doi.org/10.1063/1.4976745	journal	February 2017
Electronic properties of graphene: a perspective from scanning tunneling microscopy and magnetotransport Andrei, Eva Y.; Li, Guohong; Du, Xu Reports on Progress in Physics, Vol. 75, Issue 5 https://doi.org/10.1088/0034-4885/75/5/056501	journal	April 2012
Impact of intrinsic atomic defects on the electronic structure of MoS ₂ monolayers Kc, Santosh; Longo, Roberto C.; Addou, Rafik Nanotechnology, Vol. 25, Issue 37 https://doi.org/10.1088/0957-4484/25/37/375703	journal	August 2014
Line-defect mediated formation of hole and Mo clusters in monolayer molybdenum disulfide Ryu, Gyeong Hee; Lee, Jongyeong; Kim, Na Yeon 2D Materials, Vol. 3, Issue 1 https://doi.org/10.1088/2053-1583/3/1/014002	journal	January 2016
Angle-resolved ultraviolet photoelectron spectroscopy of the unoccupied band structure of graphite Takahashi, T.; Tokailin, H.; Sagawa, T. Physical Review B, Vol. 32, Issue 12 https://doi.org/10.1103/PhysRevB.32.8317	journal	December 1985
Chemically exfoliated single-layer MoS 2 : Stability, lattice dynamics, and catalytic adsorption from first principles Calandra, Matteo Physical Review B, Vol. 88, Issue 24 https://doi.org/10.1103/PhysRevB.88.245428	journal	December 2013
Stability and electronic structures of native defects in single-layer MoS 2 Noh, Ji-Young; Kim, Hanchul; Kim, Yong-Sung Physical Review B, Vol. 89, Issue 20 https://doi.org/10.1103/PhysRevB.89.205417	journal	May 2014
Systematic study of structural, electronic, and optical properties of atomic-scale defects in the two-dimensional transition metal dichalcogenides M X 2 ( M = Mo , W; X = S , Se, Te) Haldar, Soumyajyoti; Vovusha, Hakkim; Yadav, Manoj Kumar Physical Review B, Vol. 92, Issue 23 https://doi.org/10.1103/PhysRevB.92.235408	journal	December 2015
Scanning Tunneling Spectroscopy of Graphene on Graphite Li, Guohong; Luican, Adina; Andrei, Eva Y. Physical Review Letters, Vol. 102, Issue 17 https://doi.org/10.1103/PhysRevLett.102.176804	journal	April 2009
Doping Nature of Native Defects in 1 T − TiSe 2 Hildebrand, B.; Didiot, C.; Novello, A. M. Physical Review Letters, Vol. 112, Issue 19 https://doi.org/10.1103/PhysRevLett.112.197001	journal	May 2014
Dense Network of One-Dimensional Midgap Metallic Modes in Monolayer MoSe 2 and Their Spatial Undulations Liu, Hongjun; Jiao, Lu; Yang, Fang Physical Review Letters, Vol. 113, Issue 6 https://doi.org/10.1103/PhysRevLett.113.066105	journal	August 2014
One-Dimensional Metallic Edge States in MoS 2 Bollinger, M. V.; Lauritsen, J. V.; Jacobsen, K. W. Physical Review Letters, Vol. 87, Issue 19 https://doi.org/10.1103/PhysRevLett.87.196803	journal	October 2001
Investigations of Electronic Structures of Defects Introduced by Ar Ion Bombardments on MoS ₂ by Scanning Tunneling Microscopy Sengoku, Naohisa; Ogawa, Keiichi Japanese Journal of Applied Physics, Vol. 34, Issue Part 1, No. 6B https://doi.org/10.1143/JJAP.34.3363	journal	June 1995
One-Dimensional Metallic Edge States in MoS2 Bollinger, M. V.; Helveg, S.; Jacobsen, K. W. The American Physical Society https://doi.org/10.17877/de290r-11341	text	January 2001
Effect of contaminations and surface preparation on the work function of single layer MoS ₂ Ochedowski, Oliver; Marinov, Kolyo; Scheuschner, Nils Beilstein Journal of Nanotechnology, Vol. 5 https://doi.org/10.3762/bjnano.5.32	journal	January 2014
The Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors Ghatak, Subhamoy; Pal, Atindra Nath; Ghosh, Arindam arXiv https://doi.org/10.48550/arxiv.1203.5656	text	January 2012
Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers Najmaei, Sina; Liu, Zheng; Zhou, Wu arXiv https://doi.org/10.48550/arxiv.1301.2812	text	January 2013
Direct imaging of the band profile in single layer ${\small MoS_2}$ on graphite: quasiparticle energy gap, metallic edge states and edge band bending Zhang, Chendong; Johnson, Amber; Hsu, Chang-Lung arXiv https://doi.org/10.48550/arxiv.1401.5100	text	January 2014
Visualizing Band Offsets and Edge States in Bilayer-Monolayer Transition Metal Dichalcogenides Lateral Heterojunction Zhang, Chendong; Chen, Yuxuan; Huang, Jing-Kai arXiv https://doi.org/10.48550/arxiv.1512.01707	text	January 2015

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Theoretical Analysis of Surface Active Sites in Defective 2H and 1T′ MoS ₂ Polymorphs for Hydrogen Evolution Reaction: Quantifying the Total Activity of Point Defects Ekspong, Joakim; Gracia‐Espino, Eduardo Advanced Theory and Simulations, Vol. 3, Issue 3 https://doi.org/10.1002/adts.201900213	journal	January 2020
Imaging Nanoscale Inhomogeneities and Edge Delamination in As‐Grown MoS ₂ Using Tip‐Enhanced Photoluminescence Rodriguez, Alvaro; Verhagen, Tim; Kalbac, Martin physica status solidi (RRL) – Rapid Research Letters, Vol. 13, Issue 11 https://doi.org/10.1002/pssr.201900381	journal	May 2019
Local electrical characterization of two-dimensional materials with functional atomic force microscopy Hussain, Sabir; Xu, Kunqi; Ye, Shili Frontiers of Physics, Vol. 14, Issue 3 https://doi.org/10.1007/s11467-018-0879-7	journal	January 2019
In situ high temperature atomic level dynamics of large inversion domain formations in monolayer MoS ₂ Chen, Jun; Zhou, Si; Wen, Yi Nanoscale, Vol. 11, Issue 4 https://doi.org/10.1039/c8nr08821g	journal	January 2019
In situ work-function measurement during chemical transformation of MoS ₂ to MoO ₃ by ambient-pressure x-ray photoelectron spectroscopy Lee, Dooyong; Hyuck Jang, Jae; Song, Wooseok 2D Materials, Vol. 7, Issue 2 https://doi.org/10.1088/2053-1583/ab6780	journal	February 2020
Imaging Nanoscale Inhomogeneities and Edge Delamination in As-Grown MoS2 Using Tip-Enhanced Photoluminescence Rodriguez, Alvaro; Verhagen, Tim; Kalbac, Martin arXiv https://doi.org/10.48550/arxiv.1910.06778	text	January 2019

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Title: Evolution of Metastable Defects and Its Effect on the Electronic Properties of MoS₂ Films