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Title: Optical and Electrical Properties of Sn-Doped Zinc Oxide Single Crystals

Abstract

Here, Sn dopant in ZnO may significantly improve the n-type conductivity of ZnO through a characteristic double effect. However, studies on bulk Sn-doped ZnO are rare, and the effect of Sn doping on the optoelectronic properties of bulk ZnO is not well understood. In this work, the effect of Sn doping on the optical and electrical properties of ZnO bulk single crystals was investigated through optical absorption spectroscopy, Hall-effect measurements, and thermoluminescence (TL) spectroscopy. Undoped and Sn-doped ZnO single crystals were grown by chemical vapor transport method and characterized by x-ray diffraction analysis. The Sn doping level in the crystals was evaluated by inductively coupled plasma mass spectroscopy measurements. Hall-effect measurements revealed an increase in conductivity and carrier concentration with increasing Sn doping, while TL measurements identified a few donor species in the crystals with donor ionization energy ranging from 35 meV to 118 meV. Increasing Sn doping was also associated with a color change of single crystals from colorless to dark blue.

Authors:
 [1];  [1];  [1];  [2];  [1];  [3]; ORCiD logo [3]; ORCiD logo [1]
  1. Bowling Green State Univ., Bowling Green, OH (United States)
  2. Univ. of Toledo, Toledo, OH (United States)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1456794
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Electronic Materials
Additional Journal Information:
Journal Volume: 47; Journal Issue: 2; Journal ID: ISSN 0361-5235
Publisher:
Springer
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Semiconducting oxides; Sn-doped ZnO; Sn concentration; thermoluminescence spectroscopy; color center

Citation Formats

Haseman, M. S., Saadatkia, Pooneh, Warfield, J. T., Lawrence, J., Hernandez, A., Jellison, Jr., Gerald E., Boatner, Lynn A., and Selim, F. A. Optical and Electrical Properties of Sn-Doped Zinc Oxide Single Crystals. United States: N. p., 2017. Web. doi:10.1007/s11664-017-5942-6.
Haseman, M. S., Saadatkia, Pooneh, Warfield, J. T., Lawrence, J., Hernandez, A., Jellison, Jr., Gerald E., Boatner, Lynn A., & Selim, F. A. Optical and Electrical Properties of Sn-Doped Zinc Oxide Single Crystals. United States. doi:10.1007/s11664-017-5942-6.
Haseman, M. S., Saadatkia, Pooneh, Warfield, J. T., Lawrence, J., Hernandez, A., Jellison, Jr., Gerald E., Boatner, Lynn A., and Selim, F. A. Tue . "Optical and Electrical Properties of Sn-Doped Zinc Oxide Single Crystals". United States. doi:10.1007/s11664-017-5942-6. https://www.osti.gov/servlets/purl/1456794.
@article{osti_1456794,
title = {Optical and Electrical Properties of Sn-Doped Zinc Oxide Single Crystals},
author = {Haseman, M. S. and Saadatkia, Pooneh and Warfield, J. T. and Lawrence, J. and Hernandez, A. and Jellison, Jr., Gerald E. and Boatner, Lynn A. and Selim, F. A.},
abstractNote = {Here, Sn dopant in ZnO may significantly improve the n-type conductivity of ZnO through a characteristic double effect. However, studies on bulk Sn-doped ZnO are rare, and the effect of Sn doping on the optoelectronic properties of bulk ZnO is not well understood. In this work, the effect of Sn doping on the optical and electrical properties of ZnO bulk single crystals was investigated through optical absorption spectroscopy, Hall-effect measurements, and thermoluminescence (TL) spectroscopy. Undoped and Sn-doped ZnO single crystals were grown by chemical vapor transport method and characterized by x-ray diffraction analysis. The Sn doping level in the crystals was evaluated by inductively coupled plasma mass spectroscopy measurements. Hall-effect measurements revealed an increase in conductivity and carrier concentration with increasing Sn doping, while TL measurements identified a few donor species in the crystals with donor ionization energy ranging from 35 meV to 118 meV. Increasing Sn doping was also associated with a color change of single crystals from colorless to dark blue.},
doi = {10.1007/s11664-017-5942-6},
journal = {Journal of Electronic Materials},
number = 2,
volume = 47,
place = {United States},
year = {2017},
month = {11}
}

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