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Title: Mobility and quantum mobility of modern GaAs/AlGaAs heterostructures

Journal Article · · Physical Review Materials

Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
ER 46640-SC0002567
OSTI ID:
1456300
Journal Information:
Physical Review Materials, Journal Name: Physical Review Materials Vol. 2 Journal Issue: 6; ISSN 2475-9953
Publisher:
American Physical SocietyCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 24 works
Citation information provided by
Web of Science

References (60)

Fine structure of high-power microwave-induced resistance oscillations journal January 2017
Increasing the ν = 5/2 gap energy: an analysis of MBE growth parameters journal February 2014
Extremely high-mobility two dimensional electron gas: Evaluation of scattering mechanisms journal August 1997
Reorientation of quantum Hall stripes within a partially filled Landau level journal March 2016
Universal Prefactor of Activated Conductivity in the Quantum Hall Effect journal January 1995
Maximum low-temperature mobility of two-dimensional electrons in heterojunctions with a thick spacer layer journal April 1990
Quantitative analysis of the disorder broadening and the intrinsic gap for the ν = 5 2 fractional quantum Hall state journal September 2011
Distribution of electron density and magnetocapacitance in the regime of the fractional quantum Hall effect journal June 1993
Giant microwave photoresistance of two-dimensional electron gas journal October 2001
MBE growth of ultra-low disorder 2DEG with mobility exceeding 35×106cm2/Vs journal March 2009
Insulating and Fractional Quantum Hall States in the First Excited Landau Level journal January 2002
Electronic transport properties of a two-dimensional electron gas in a silicon quantum-well structure at low temperature journal January 1987
Quantitative examination of the collapse of spin splitting in the quantum Hall regime journal October 2011
Evidence for a New Dissipationless Effect in 2D Electronic Transport journal January 2003
An investigation of orientational symmetry-breaking mechanisms in high Landau levels journal July 2001
Band parameters for III–V compound semiconductors and their alloys journal June 2001
Surface segregation and the Al problem in GaAs quantum wells journal March 2018
The role of MBE in recent quantum Hall effect physics discoveries journal December 2003
ν = 5 / 2 Fractional Quantum Hall State in the Presence of Alloy Disorder journal March 2014
Transport in two-dimensional modulation-doped semiconductor structures journal May 2015
Charge Density Wave in Two-Dimensional Electron Liquid in Weak Magnetic Field journal January 1996
New Class of Magnetoresistance Oscillations: Interaction of a Two-Dimensional Electron Gas with Leaky Interface Phonons journal April 2001
Observation of an even-denominator quantum number in the fractional quantum Hall effect journal October 1987
New Concept for the Reduction of Impurity Scattering in Remotely Doped GaAs Quantum Wells journal November 1996
Hall field-induced resistance oscillations in a tunable-density GaAs quantum well journal September 2017
Two-Dimensional Magnetotransport in the Extreme Quantum Limit journal May 1982
Scattering time and single-particle relaxation time in a disordered two-dimensional electron gas journal November 1988
Microwave photoresistance in an ultra-high-quality GaAs quantum well journal March 2016
Quantum lifetime in ultrahigh quality GaAs quantum wells: Relationship to Δ 5 / 2 and impact of density fluctuations journal July 2017
Effect of charged donor correlation and Wigner liquid formation on the transport properties of a two-dimensional electron gas in modulation δ -doped heterojunctions journal April 1999
Surface roughness scattering in multisubband accumulation layers journal June 2016
Role of background impurities in the single-particle relaxation lifetime of a two-dimensional electron gas journal July 2009
Shubnikov–de Haas-like oscillations in millimeterwave photoconductivity in a high-mobility two-dimensional electron gas journal October 2001
Molecular Beam Epitaxy of Ultra-High-Quality AlGaAs/GaAs Heterostructures: Enabling Physics in Low-Dimensional Electronic Systems journal March 2014
Density dependence of the ν = 5 2 energy gap: Experiment and theory journal January 2010
Influence of the substrate orientation on Si incorporation in molecular‐beam epitaxial GaAs journal February 1988
Experimental evidence for new particles in the fractional quantum Hall effect journal May 1993
Dynamics of Spontaneous Electric Field Domains in a Two-Dimensional Electron System Irradiated by Microwaves and the Conductance of a Donor Layer journal January 2018
Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures journal December 2002
Electron mobilities exceeding 10 7 cm 2 /V s in modulation‐doped GaAs journal October 1989
Two‐dimensional electron transport in semiconductor layers II: Screening journal September 1981
Zener Tunneling Between Landau Orbits in a High-Mobility Two-Dimensional Electron Gas journal July 2002
Universal density scaling of disorder-limited low-temperature conductivity in high-mobility two-dimensional systems journal July 2013
Effects of the layer thickness on the electronic character in GaAs‐AlAs superlattices journal April 1987
Nonequilibrium phenomena in high Landau levels journal November 2012
Interface roughness scattering in GaAs/AlAs quantum wells journal December 1987
Two-dimensional electron gas at a semiconductor-semiconductor interface journal March 1979
Evidence for an Anisotropic State of Two-Dimensional Electrons in High Landau Levels journal January 1999
Non-linear screening and the background density of 2DEG states in magnetic field journal September 1988
Mobility versus quality in two-dimensional semiconductor structures journal July 2014
Impurity bands in inversion layers journal December 1980
ν = 5 / 2 fractional quantum Hall state in low-mobility electron systems: Different roles of disorder journal August 2013
High-temperature resistivity measured at ν = 5 2 as a predictor of the two-dimensional electron gas quality in the N = 1 Landau level journal June 2017
Strongly anisotropic transport in higher two-dimensional Landau levels journal January 1999
Bose–Einstein condensation of excitons in bilayer electron systems journal December 2004
Direct observation of a Γ − X energy spectrum transition in narrow AlAs quantum wells journal March 2018
Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35×106cm2/V s in AlGaAs/GaAs quantum wells grown by MBE journal May 2016
Bolometric detection of magnetoplasma resonances in microwave absorption by two-dimensional electron systems based on doping layer conductivity measurements in GaAs/AlGaAs heterostructures journal November 2014
Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al-Ga-As:Si Solid System -- a Novel Short Period AlAs/n-GaAs Superlattice -- journal October 1983
Model for Dissipative Conductance in Fractional Quantum Hall States journal March 2011

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