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Title: Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor

Authors:
ORCiD logo [1];  [1];  [2]; ORCiD logo [2];  [3];  [4];  [5]
  1. LTCI, Télécom ParisTech, Université Paris-Saclay, 46 Rue Barrault, 75013 Paris, France
  2. Institute for Energy Efficiency, University of California Santa Barbara, 2314 Phelps Hall, Santa Barbara, California 93106, USA
  3. Institute for Energy Efficiency, University of California Santa Barbara, 2314 Phelps Hall, Santa Barbara, California 93106, USA, Materials Department, Engineering II Building, 1355, University of California Santa Barbara, Santa Barbara, California 93106, USA
  4. Institute for Energy Efficiency, University of California Santa Barbara, 2314 Phelps Hall, Santa Barbara, California 93106, USA, Materials Department, Engineering II Building, 1355, University of California Santa Barbara, Santa Barbara, California 93106, USA, Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, USA
  5. LTCI, Télécom ParisTech, Université Paris-Saclay, 46 Rue Barrault, 75013 Paris, France, Center for High Technology Materials, University of New-Mexico, 1313 Goddard St SE, Albuquerque, New-Mexico 87106, USA
Publication Date:
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E)
OSTI Identifier:
1456260
Grant/Contract Number:  
AR000067
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 112 Journal Issue: 25; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Duan, J., Huang, H., Jung, D., Zhang, Z., Norman, J., Bowers, J. E., and Grillot, F. Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor. United States: N. p., 2018. Web. doi:10.1063/1.5025879.
Duan, J., Huang, H., Jung, D., Zhang, Z., Norman, J., Bowers, J. E., & Grillot, F. Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor. United States. doi:10.1063/1.5025879.
Duan, J., Huang, H., Jung, D., Zhang, Z., Norman, J., Bowers, J. E., and Grillot, F. Mon . "Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor". United States. doi:10.1063/1.5025879.
@article{osti_1456260,
title = {Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor},
author = {Duan, J. and Huang, H. and Jung, D. and Zhang, Z. and Norman, J. and Bowers, J. E. and Grillot, F.},
abstractNote = {},
doi = {10.1063/1.5025879},
journal = {Applied Physics Letters},
number = 25,
volume = 112,
place = {United States},
year = {2018},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.5025879

Citation Metrics:
Cited by: 13 works
Citation information provided by
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