Radiative and Auger recombination processes in indium nitride
Abstract
InN and In-rich InGaN alloys emit in the infrared range desirable for telecommunication applications. However, the droop problem reduces their efficiency at high power. Nonradiative Auger recombination is a strong contributor to this efficiency loss. Here, we investigate radiative and Auger recombination in InN and In-rich InGaN with first-principles calculations. We find that the direct eeh process dominates Auger recombination in these materials. In the degenerate carrier regime, the Auger and radiative rates are suppressed by different mechanisms: the radiative rate is affected by phase-space filling while Auger recombination is primarily reduced by free-carrier screening. The suppression of the radiative rate onsets at lower carrier densities than that of the Auger rate, which reduces the internal quantum efficiency of InN devices. Droop in InN can be mitigated by increasing the bandgap through alloying with GaN. Here, we demonstrate that the peak efficiency of In0.93Ga0.07N alloys (which emit at 1550 nm) is 33% higher than that of InN and occurs at higher carrier densities.
- Publication Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). National Energy Research Scientific Computing Center (NERSC); Univ. of California, Oakland, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1543870
- Alternate Identifier(s):
- OSTI ID: 1455105
- Grant/Contract Number:
- AC02-05CH11231
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 112; Journal Issue: 25; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Physics
Citation Formats
McAllister, Andrew, Bayerl, Dylan, and Kioupakis, Emmanouil. Radiative and Auger recombination processes in indium nitride. United States: N. p., 2018.
Web. doi:10.1063/1.5038106.
McAllister, Andrew, Bayerl, Dylan, & Kioupakis, Emmanouil. Radiative and Auger recombination processes in indium nitride. United States. https://doi.org/10.1063/1.5038106
McAllister, Andrew, Bayerl, Dylan, and Kioupakis, Emmanouil. Mon .
"Radiative and Auger recombination processes in indium nitride". United States. https://doi.org/10.1063/1.5038106. https://www.osti.gov/servlets/purl/1543870.
@article{osti_1543870,
title = {Radiative and Auger recombination processes in indium nitride},
author = {McAllister, Andrew and Bayerl, Dylan and Kioupakis, Emmanouil},
abstractNote = {InN and In-rich InGaN alloys emit in the infrared range desirable for telecommunication applications. However, the droop problem reduces their efficiency at high power. Nonradiative Auger recombination is a strong contributor to this efficiency loss. Here, we investigate radiative and Auger recombination in InN and In-rich InGaN with first-principles calculations. We find that the direct eeh process dominates Auger recombination in these materials. In the degenerate carrier regime, the Auger and radiative rates are suppressed by different mechanisms: the radiative rate is affected by phase-space filling while Auger recombination is primarily reduced by free-carrier screening. The suppression of the radiative rate onsets at lower carrier densities than that of the Auger rate, which reduces the internal quantum efficiency of InN devices. Droop in InN can be mitigated by increasing the bandgap through alloying with GaN. Here, we demonstrate that the peak efficiency of In0.93Ga0.07N alloys (which emit at 1550 nm) is 33% higher than that of InN and occurs at higher carrier densities.},
doi = {10.1063/1.5038106},
journal = {Applied Physics Letters},
number = 25,
volume = 112,
place = {United States},
year = {Mon Jun 18 00:00:00 EDT 2018},
month = {Mon Jun 18 00:00:00 EDT 2018}
}
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