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Title: Radiative and Auger recombination processes in indium nitride

Authors:
ORCiD logo [1] ;  [2] ;  [2]
  1. Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109, USA
  2. Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
Publication Date:
Grant/Contract Number:
AC02-05CH11231
Type:
Publisher's Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 112 Journal Issue: 25; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1455105

McAllister, Andrew, Bayerl, Dylan, and Kioupakis, Emmanouil. Radiative and Auger recombination processes in indium nitride. United States: N. p., Web. doi:10.1063/1.5038106.
McAllister, Andrew, Bayerl, Dylan, & Kioupakis, Emmanouil. Radiative and Auger recombination processes in indium nitride. United States. doi:10.1063/1.5038106.
McAllister, Andrew, Bayerl, Dylan, and Kioupakis, Emmanouil. 2018. "Radiative and Auger recombination processes in indium nitride". United States. doi:10.1063/1.5038106.
@article{osti_1455105,
title = {Radiative and Auger recombination processes in indium nitride},
author = {McAllister, Andrew and Bayerl, Dylan and Kioupakis, Emmanouil},
abstractNote = {},
doi = {10.1063/1.5038106},
journal = {Applied Physics Letters},
number = 25,
volume = 112,
place = {United States},
year = {2018},
month = {6}
}

Works referenced in this record:

Efficiency droop in nitride-based light-emitting diodes
journal, July 2010