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Title: Experimental and theoretical electronic structure and symmetry effects in ultrathin NbSe 2 films

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Grant/Contract Number:
FG02-07ER46383; AC02-05CH11231
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Materials
Additional Journal Information:
Journal Name: Physical Review Materials Journal Volume: 2 Journal Issue: 6; Journal ID: ISSN 2475-9953
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1455094

Xu, Cai-Zhi, Wang, Xiaoxiong, Chen, Peng, Flötotto, David, Hlevyack, Joseph Andrew, Lin, Meng-Kai, Bian, Guang, Mo, Sung-Kwan, and Chiang, Tai-Chang. Experimental and theoretical electronic structure and symmetry effects in ultrathin NbSe 2 films. United States: N. p., Web. doi:10.1103/PhysRevMaterials.2.064002.
Xu, Cai-Zhi, Wang, Xiaoxiong, Chen, Peng, Flötotto, David, Hlevyack, Joseph Andrew, Lin, Meng-Kai, Bian, Guang, Mo, Sung-Kwan, & Chiang, Tai-Chang. Experimental and theoretical electronic structure and symmetry effects in ultrathin NbSe 2 films. United States. doi:10.1103/PhysRevMaterials.2.064002.
Xu, Cai-Zhi, Wang, Xiaoxiong, Chen, Peng, Flötotto, David, Hlevyack, Joseph Andrew, Lin, Meng-Kai, Bian, Guang, Mo, Sung-Kwan, and Chiang, Tai-Chang. 2018. "Experimental and theoretical electronic structure and symmetry effects in ultrathin NbSe 2 films". United States. doi:10.1103/PhysRevMaterials.2.064002.
@article{osti_1455094,
title = {Experimental and theoretical electronic structure and symmetry effects in ultrathin NbSe 2 films},
author = {Xu, Cai-Zhi and Wang, Xiaoxiong and Chen, Peng and Flötotto, David and Hlevyack, Joseph Andrew and Lin, Meng-Kai and Bian, Guang and Mo, Sung-Kwan and Chiang, Tai-Chang},
abstractNote = {},
doi = {10.1103/PhysRevMaterials.2.064002},
journal = {Physical Review Materials},
number = 6,
volume = 2,
place = {United States},
year = {2018},
month = {6}
}

Works referenced in this record:

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