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Title: Magnetoresistance in LuBi and YBi semimetals due to nearly perfect carrier compensation

Abstract

In this paper, monobismuthides of lutetium and yttrium are shown as representatives of materials which exhibit extreme magnetoresistance and magnetic-field-induced resistivity plateaus. At low temperatures and in magnetic fields of 9 T, the magnetoresistance attains orders of magnitude of 104% and 103%, on YBi and LuBi, respectively. Our thorough examination of electron-transport properties of both compounds shows that observed features are the consequence of nearly perfect carrier compensation rather than of possible nontrivial topology of electronic states. The field-induced plateau of electrical resistivity can be explained with Kohler scaling. An anisotropic multiband model of electronic transport describes very well the magnetic field dependence of electrical resistivity and Hall resistivity. Data obtained from the Shubnikov–de Haas oscillation analysis also confirm that the Fermi surface of each compound contains almost equal amounts of holes and electrons. Finally, first-principle calculations of electronic band structure are in a very good agreement with the experimental data.

Authors:
 [1];  [2];  [1];  [1]
+ Show Author Affiliations
  1. Polish Academy of Sciences (PAS), Wrocław (Poland). Inst. of Low Temperature and Structure Research
  2. Polish Academy of Sciences (PAS), Wrocław (Poland). Inst. of Low Temperature and Structure Research; Ames Lab. and Iowa State Univ., Ames, IA (United States). Division of Materials Science and Engineering. Dept. of Physics and Astronomy
Publication Date:
Research Org.:
Ames Lab. and Iowa State Univ., Ames, IA (United States); Polish Academy of Sciences (PAS), Wrocław (Poland)
Sponsoring Org.:
USDOE; Ames Laboratory Directed Research and Development (LDRD) Program; National Science Centre of Poland
OSTI Identifier:
1459545
Alternate Identifier(s):
OSTI ID: 1454891
Report Number(s):
IS-J-9701
Journal ID: ISSN 2469-9950; TRN: US1901567
Grant/Contract Number:  
AC02-07CH11358; 2015/18/A/ST3/00057
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 97; Journal Issue: 23; Journal ID: ISSN 2469-9950
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; conductivity; Fermi surface; first-principles calculations; giant magnetoresistance; magnetotransport; Shubnikov-de Haas effect; spin-orbit coupling; topological materials; pnictides; rare-earth alloys

Citation Formats

Pavlosiuk, Orest, Swatek, Przemyslaw, Kaczorowski, Dariusz, and Wisniewski, Piotr. Magnetoresistance in LuBi and YBi semimetals due to nearly perfect carrier compensation. United States: N. p., 2018. Web. doi:10.1103/PhysRevB.97.235132.
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Pavlosiuk, Orest, Swatek, Przemyslaw, Kaczorowski, Dariusz, & Wisniewski, Piotr. Magnetoresistance in LuBi and YBi semimetals due to nearly perfect carrier compensation. United States. https://doi.org/10.1103/PhysRevB.97.235132
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Pavlosiuk, Orest, Swatek, Przemyslaw, Kaczorowski, Dariusz, and Wisniewski, Piotr. Tue . "Magnetoresistance in LuBi and YBi semimetals due to nearly perfect carrier compensation". United States. https://doi.org/10.1103/PhysRevB.97.235132. https://www.osti.gov/servlets/purl/1459545.
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@article{osti_1459545,
title = {Magnetoresistance in LuBi and YBi semimetals due to nearly perfect carrier compensation},
author = {Pavlosiuk, Orest and Swatek, Przemyslaw and Kaczorowski, Dariusz and Wisniewski, Piotr},
abstractNote = {In this paper, monobismuthides of lutetium and yttrium are shown as representatives of materials which exhibit extreme magnetoresistance and magnetic-field-induced resistivity plateaus. At low temperatures and in magnetic fields of 9 T, the magnetoresistance attains orders of magnitude of 104% and 103%, on YBi and LuBi, respectively. Our thorough examination of electron-transport properties of both compounds shows that observed features are the consequence of nearly perfect carrier compensation rather than of possible nontrivial topology of electronic states. The field-induced plateau of electrical resistivity can be explained with Kohler scaling. An anisotropic multiband model of electronic transport describes very well the magnetic field dependence of electrical resistivity and Hall resistivity. Data obtained from the Shubnikov–de Haas oscillation analysis also confirm that the Fermi surface of each compound contains almost equal amounts of holes and electrons. Finally, first-principle calculations of electronic band structure are in a very good agreement with the experimental data.},
doi = {10.1103/PhysRevB.97.235132},
journal = {Physical Review B},
number = 23,
volume = 97,
place = {United States},
year = {Tue Jun 19 00:00:00 EDT 2018},
month = {Tue Jun 19 00:00:00 EDT 2018}
}
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Journal Article:
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Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.97.235132
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Cited by: 42 works
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Figures / Tables:

FIG. 1 FIG. 1: Magnetoresistance isotherms of YBi (a) and LuBi (b) measured in magnetic field applied along [001] direction, transverse to electrical current.
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    Works referencing / citing this record:

    Orbital-flop Induced Magnetoresistance Anisotropy in Rare Earth Monopnictide CeSb
    journal, June 2019

    Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe2
    journal, July 2018

    Magneto-resistance in pristine and irradiated TaAs 2
    journal, April 2019

    • Harimohan, V.; Bharathi, A.; Rajaraman, R.
    • AIP Advances, Vol. 9, Issue 4
    • DOI: 10.1063/1.5087772

    First principles investigation of topological phase in XMR material TmSb under hydrostatic pressure
    journal, May 2019

    • Wadhwa, Payal; Kumar, Shailesh; Shukla, Alok
    • Journal of Physics: Condensed Matter, Vol. 31, Issue 33
    • DOI: 10.1088/1361-648x/ab1f5b

    Nonsaturating extreme magnetoresistance and large electronic magnetostriction in LuAs
    journal, November 2019

    Galvanomagnetic properties of the putative type-II Dirac semimetal PtTe$_2$
    text, January 2018

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      Figures / Tables found in this record:

      FIG. 1 (p. 4)figure
      FIG. 2 (p. 5)figure
      FIG. 3 (p. 5)figure
      FIG. 4 (p. 6)figure
      FIG. 5 (p. 7)figure
      TABLE I (p. 7)table
      FIG. 6 (p. 9)figure
      FIG. 7 (p. 9)figure
      FIG. 8 (p. 10)figure
      TABLE II (p. 11)table
      FIG. 9 (p. 12)figure
      TABLE III (p. 13)table
      FIG. S1 (p. 20)figure
      TABLE S1 (p. 21)table
      FIG. S2 (p. 22)figure
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