The effects of core-level broadening in determining band alignment at the epitaxial SrTiO3 (001)/p-Ge(001) heterojunction
Abstract
Chemical effects at the surface and interface can broaden core-level spectra in X-ray photoemission for thin-film heterojunctions, as can electronic charge redistributions. We explore these effects and their influence on the measurement of valence and conduction band offsets at the epitaxial SrTiO3(001)/p-Ge(001) heterojunction. Here, we observe a clear broadening in Ge 3d and Sr 3d core-level X-ray photoelectron spectra relative to those of clean, bulk Ge(001), and homoepitaxial SrTiO3(001), respectively. Angle-resolved measurements indicate that this broadening is driven primarily by chemical shifts associated with surface hydroxylation, with built-in potentials playing only a minor role. The impact of these two interpretations on the valence band offset is significant on the scale of transport energetics, amounting to a difference of 0.2 eV.
- Authors:
-
[1];
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical and Computational Sciences Directorate
- Publication Date:
- Research Org.:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Biological and Environmental Research (BER)
- OSTI Identifier:
- 1454742
- Alternate Identifier(s):
- OSTI ID: 1348949
- Report Number(s):
- PNNL-SA-123225
Journal ID: ISSN 0003-6951
- Grant/Contract Number:
- 10122; AC05-76RL01830
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 110; Journal Issue: 8; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
Citation Formats
Chambers, Scott A., Du, Yingge, Comes, Ryan B., Spurgeon, Steven R., and Sushko, Peter V. The effects of core-level broadening in determining band alignment at the epitaxial SrTiO3 (001)/p-Ge(001) heterojunction. United States: N. p., 2017.
Web. doi:10.1063/1.4977422.
Chambers, Scott A., Du, Yingge, Comes, Ryan B., Spurgeon, Steven R., & Sushko, Peter V. The effects of core-level broadening in determining band alignment at the epitaxial SrTiO3 (001)/p-Ge(001) heterojunction. United States. https://doi.org/10.1063/1.4977422
Chambers, Scott A., Du, Yingge, Comes, Ryan B., Spurgeon, Steven R., and Sushko, Peter V. Mon .
"The effects of core-level broadening in determining band alignment at the epitaxial SrTiO3 (001)/p-Ge(001) heterojunction". United States. https://doi.org/10.1063/1.4977422. https://www.osti.gov/servlets/purl/1454742.
@article{osti_1454742,
title = {The effects of core-level broadening in determining band alignment at the epitaxial SrTiO3 (001)/p-Ge(001) heterojunction},
author = {Chambers, Scott A. and Du, Yingge and Comes, Ryan B. and Spurgeon, Steven R. and Sushko, Peter V.},
abstractNote = {Chemical effects at the surface and interface can broaden core-level spectra in X-ray photoemission for thin-film heterojunctions, as can electronic charge redistributions. We explore these effects and their influence on the measurement of valence and conduction band offsets at the epitaxial SrTiO3(001)/p-Ge(001) heterojunction. Here, we observe a clear broadening in Ge 3d and Sr 3d core-level X-ray photoelectron spectra relative to those of clean, bulk Ge(001), and homoepitaxial SrTiO3(001), respectively. Angle-resolved measurements indicate that this broadening is driven primarily by chemical shifts associated with surface hydroxylation, with built-in potentials playing only a minor role. The impact of these two interpretations on the valence band offset is significant on the scale of transport energetics, amounting to a difference of 0.2 eV.},
doi = {10.1063/1.4977422},
journal = {Applied Physics Letters},
number = 8,
volume = 110,
place = {United States},
year = {Mon Feb 20 00:00:00 EST 2017},
month = {Mon Feb 20 00:00:00 EST 2017}
}
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Works referencing / citing this record:
Epitaxial Oxides on Semiconductors: From Fundamentals to New Devices
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Effect of Cationic Interface Defects on Band Alignment and Contact Resistance in Metal/Oxide Heterojunctions
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Valence-band offsets of InGaZnO4, LaAlO3, and SrTiO3 heterostructures explained by interface-induced gap states
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The elusive photocatalytic water splitting reaction using sunlight on suspended nanoparticles: is there a way forward?
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Oxygen partial pressure dependence of surface space charge formation in donor-doped SrTiO 3
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