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Title: Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films

Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. Here, this study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.
Authors:
 [1] ;  [1] ;  [2] ;  [3] ; ORCiD logo [4] ; ORCiD logo [4] ; ORCiD logo [1]
  1. Univ. of Virginia, Charlottesville, VA (United States). Dept. of Physics
  2. Univ. of Virginia, Charlottesville, VA (United States). Dept. of of Materials Science and Engineering
  3. Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
  4. Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Physical and Computational Sciences Directorate
Publication Date:
Report Number(s):
PNNL-SA-113796
Journal ID: ISSN 0003-6951; APPLAB
Grant/Contract Number:
HDTRA 1-11-1-0024; AC05-76RL01830
Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 108; Journal Issue: 1; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
Sponsoring Org:
USDOE Laboratory Directed Research and Development (LDRD) Program; Defense Threat Reduction Agency (DTRA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
OSTI Identifier:
1454741
Alternate Identifier(s):
OSTI ID: 1234173

Li, Xiaopu, Ma, Chung T., Lu, Jiwei, Devaraj, Arun, Spurgeon, Steven R., Comes, Ryan B., and Poon, S. Joseph. Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films. United States: N. p., Web. doi:10.1063/1.4939240.
Li, Xiaopu, Ma, Chung T., Lu, Jiwei, Devaraj, Arun, Spurgeon, Steven R., Comes, Ryan B., & Poon, S. Joseph. Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films. United States. doi:10.1063/1.4939240.
Li, Xiaopu, Ma, Chung T., Lu, Jiwei, Devaraj, Arun, Spurgeon, Steven R., Comes, Ryan B., and Poon, S. Joseph. 2016. "Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films". United States. doi:10.1063/1.4939240. https://www.osti.gov/servlets/purl/1454741.
@article{osti_1454741,
title = {Exchange bias and bistable magneto-resistance states in amorphous TbFeCo thin films},
author = {Li, Xiaopu and Ma, Chung T. and Lu, Jiwei and Devaraj, Arun and Spurgeon, Steven R. and Comes, Ryan B. and Poon, S. Joseph},
abstractNote = {Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy. Atom probe tomography, scanning transmission electron microscopy, and energy dispersive X-ray spectroscopy mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. Here, this study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.},
doi = {10.1063/1.4939240},
journal = {Applied Physics Letters},
number = 1,
volume = 108,
place = {United States},
year = {2016},
month = {1}
}