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Title: Atomic-scale strain manipulation of a charge density wave

Abstract

A charge density wave (CDW) is one of the fundamental instabilities of the Fermi surface occurring in a wide range of quantum materials. In dimensions higher than one, where Fermi surface nesting can play only a limited role, the selection of the particular wavevector and geometry of an emerging CDW should in principle be susceptible to controllable manipulation. In this work, we implement a simple method for straining materials compatible with low-temperature scanning tunneling microscopy/spectroscopy (STM/S), and use it to strain-engineer CDWs in 2H -NbSe 2 . Our STM/S measurements, combined with theory, reveal how small strain-induced changes in the electronic band structure and phonon dispersion lead to dramatic changes in the CDW ordering wavevector and geometry. Our work unveils the microscopic mechanism of a CDW formation in this system, and can serve as a general tool compatible with a range of spectroscopic techniques to engineer electronic states in any material where local strain or lattice symmetry breaking plays a role.

Authors:
 [1];  [2];  [3];  [1];  [1];  [1];  [1];  [4];  [1];  [1];  [5];  [1]
  1. Boston College, Chestnut Hill, MA (United States)
  2. Univ. of California, Berkeley, CA (United States); Univ. of Oxford (United Kingdom)
  3. National Taiwan Univ., Taipei (Taiwan); Academia Sinica, Taipei (Taiwan)
  4. National Taiwan Univ., Taipei (Taiwan)
  5. Univ. of Amsterdam (Netherlands)
Publication Date:
Research Org.:
Boston College, Chestnut Hill, MA (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22); National Science Foundation (NSF)
OSTI Identifier:
1454667
Alternate Identifier(s):
OSTI ID: 1547351
Grant/Contract Number:  
FG02-99ER45747
Resource Type:
Published Article
Journal Name:
Proceedings of the National Academy of Sciences of the United States of America
Additional Journal Information:
Journal Volume: 115; Journal Issue: 27; Journal ID: ISSN 0027-8424
Publisher:
National Academy of Sciences, Washington, DC (United States)
Country of Publication:
United States
Language:
English
Subject:
scanning tunneling microscopy; charge density waves; strain; NbSe2

Citation Formats

Gao, Shang, Flicker, Felix, Sankar, Raman, Zhao, He, Ren, Zheng, Rachmilowitz, Bryan, Balachandar, Sidhika, Chou, Fangcheng, Burch, Kenneth S., Wang, Ziqiang, van Wezel, Jasper, and Zeljkovic, Ilija. Atomic-scale strain manipulation of a charge density wave. United States: N. p., 2018. Web. doi:10.1073/pnas.1718931115.
Gao, Shang, Flicker, Felix, Sankar, Raman, Zhao, He, Ren, Zheng, Rachmilowitz, Bryan, Balachandar, Sidhika, Chou, Fangcheng, Burch, Kenneth S., Wang, Ziqiang, van Wezel, Jasper, & Zeljkovic, Ilija. Atomic-scale strain manipulation of a charge density wave. United States. doi:10.1073/pnas.1718931115.
Gao, Shang, Flicker, Felix, Sankar, Raman, Zhao, He, Ren, Zheng, Rachmilowitz, Bryan, Balachandar, Sidhika, Chou, Fangcheng, Burch, Kenneth S., Wang, Ziqiang, van Wezel, Jasper, and Zeljkovic, Ilija. Mon . "Atomic-scale strain manipulation of a charge density wave". United States. doi:10.1073/pnas.1718931115.
@article{osti_1454667,
title = {Atomic-scale strain manipulation of a charge density wave},
author = {Gao, Shang and Flicker, Felix and Sankar, Raman and Zhao, He and Ren, Zheng and Rachmilowitz, Bryan and Balachandar, Sidhika and Chou, Fangcheng and Burch, Kenneth S. and Wang, Ziqiang and van Wezel, Jasper and Zeljkovic, Ilija},
abstractNote = {A charge density wave (CDW) is one of the fundamental instabilities of the Fermi surface occurring in a wide range of quantum materials. In dimensions higher than one, where Fermi surface nesting can play only a limited role, the selection of the particular wavevector and geometry of an emerging CDW should in principle be susceptible to controllable manipulation. In this work, we implement a simple method for straining materials compatible with low-temperature scanning tunneling microscopy/spectroscopy (STM/S), and use it to strain-engineer CDWs in 2H -NbSe 2 . Our STM/S measurements, combined with theory, reveal how small strain-induced changes in the electronic band structure and phonon dispersion lead to dramatic changes in the CDW ordering wavevector and geometry. Our work unveils the microscopic mechanism of a CDW formation in this system, and can serve as a general tool compatible with a range of spectroscopic techniques to engineer electronic states in any material where local strain or lattice symmetry breaking plays a role.},
doi = {10.1073/pnas.1718931115},
journal = {Proceedings of the National Academy of Sciences of the United States of America},
number = 27,
volume = 115,
place = {United States},
year = {2018},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1073/pnas.1718931115

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Cited by: 2 works
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Works referenced in this record:

Quantitative measurement of displacement and strain fields from HREM micrographs
journal, August 1998