Activation energy of metastable amorphous Ge2Sb2Te5 from room temperature to melt
Abstract
Resistivity of metastable amorphous Ge2Sb2Te5 (GST) measured at device level show an exponential decline with temperature matching with the steady-state thin-film resistivity measured at 858 K (melting temperature). This suggests that the free carrier activation mechanisms form a continuum in a large temperature scale (300 K – 858 K) and the metastable amorphous phase can be treated as a super-cooled liquid. The effective activation energy calculated using the resistivity versus temperature data follow a parabolic behavior, with a room temperature value of 333 meV, peaking to ~377 meV at ~465 K and reaching zero at ~930 K, using a reference activation energy of 111 meV (3kBT/2) at melt. Amorphous GST is expected to behave as a p-type semiconductor at Tmelt ~ 858 K and transitions from the semiconducting-liquid phase to the metallic-liquid phase at ~930 K at equilibrium. The simultaneous Seebeck (S) and resistivity versus temperature measurements of amorphous-fcc mixed-phase GST thin-films show linear S-T trends that meet S = 0 at 0 K, consistent with degenerate semiconductors, and the dS/dT and room temperature activation energy show a linear correlation. The single-crystal fcc is calculated to have dS/dT = 0.153 μV/K2 for an activation energy of zero and a Fermimore »
- Authors:
-
- Univ. of Connecticut, Storrs, CT (United States)
- Univ. of Connecticut, Storrs, CT (United States); Eskisehire Osmangasi Univ. (Turkey)
- Univ. of Connecticut, Storrs, CT (United States); Atilim Univ., Ankara (Turkey)
- IBM, Yorktown Heights, NY (United States). Thomas J. Watson Research Center
- Publication Date:
- Research Org.:
- Univ. of Connecticut, Storrs, CT (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1499133
- Alternate Identifier(s):
- OSTI ID: 1454344
- Grant/Contract Number:
- SC0005038
- Resource Type:
- Accepted Manuscript
- Journal Name:
- AIP Advances
- Additional Journal Information:
- Journal Volume: 8; Journal Issue: 6; Journal ID: ISSN 2158-3226
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE
Citation Formats
Muneer, Sadid, Scoggin, Jake, Dirisaglik, Faruk, Adnane, Lhacene, Cywar, Adam, Bakan, Gokhan, Cil, Kadir, Lam, Chung, Silva, Helena, and Gokirmak, Ali. Activation energy of metastable amorphous Ge2Sb2Te5 from room temperature to melt. United States: N. p., 2018.
Web. doi:10.1063/1.5035085.
Muneer, Sadid, Scoggin, Jake, Dirisaglik, Faruk, Adnane, Lhacene, Cywar, Adam, Bakan, Gokhan, Cil, Kadir, Lam, Chung, Silva, Helena, & Gokirmak, Ali. Activation energy of metastable amorphous Ge2Sb2Te5 from room temperature to melt. United States. https://doi.org/10.1063/1.5035085
Muneer, Sadid, Scoggin, Jake, Dirisaglik, Faruk, Adnane, Lhacene, Cywar, Adam, Bakan, Gokhan, Cil, Kadir, Lam, Chung, Silva, Helena, and Gokirmak, Ali. Wed .
"Activation energy of metastable amorphous Ge2Sb2Te5 from room temperature to melt". United States. https://doi.org/10.1063/1.5035085. https://www.osti.gov/servlets/purl/1499133.
@article{osti_1499133,
title = {Activation energy of metastable amorphous Ge2Sb2Te5 from room temperature to melt},
author = {Muneer, Sadid and Scoggin, Jake and Dirisaglik, Faruk and Adnane, Lhacene and Cywar, Adam and Bakan, Gokhan and Cil, Kadir and Lam, Chung and Silva, Helena and Gokirmak, Ali},
abstractNote = {Resistivity of metastable amorphous Ge2Sb2Te5 (GST) measured at device level show an exponential decline with temperature matching with the steady-state thin-film resistivity measured at 858 K (melting temperature). This suggests that the free carrier activation mechanisms form a continuum in a large temperature scale (300 K – 858 K) and the metastable amorphous phase can be treated as a super-cooled liquid. The effective activation energy calculated using the resistivity versus temperature data follow a parabolic behavior, with a room temperature value of 333 meV, peaking to ~377 meV at ~465 K and reaching zero at ~930 K, using a reference activation energy of 111 meV (3kBT/2) at melt. Amorphous GST is expected to behave as a p-type semiconductor at Tmelt ~ 858 K and transitions from the semiconducting-liquid phase to the metallic-liquid phase at ~930 K at equilibrium. The simultaneous Seebeck (S) and resistivity versus temperature measurements of amorphous-fcc mixed-phase GST thin-films show linear S-T trends that meet S = 0 at 0 K, consistent with degenerate semiconductors, and the dS/dT and room temperature activation energy show a linear correlation. The single-crystal fcc is calculated to have dS/dT = 0.153 μV/K2 for an activation energy of zero and a Fermi level 0.16 eV below the valance band edge.},
doi = {10.1063/1.5035085},
journal = {AIP Advances},
number = 6,
volume = 8,
place = {United States},
year = {Wed Jun 13 00:00:00 EDT 2018},
month = {Wed Jun 13 00:00:00 EDT 2018}
}
Web of Science
Figures / Tables:
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Works referencing / citing this record:
Modeling heterogeneous melting in phase change memory devices
journal, January 2019
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Figures / Tables found in this record: