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Title: A silicon metal-oxide-semiconductor electron spin-orbit qubit

Here, the silicon metal-oxide-semiconductor (MOS) material system is a technologically important implementation of spin-based quantum information processing. However, the MOS interface is imperfect leading to concerns about 1/f trap noise and variability in the electron g-factor due to spin–orbit (SO) effects. Here we advantageously use interface–SO coupling for a critical control axis in a double-quantum-dot singlet–triplet qubit. The magnetic field-orientation dependence of the g-factors is consistent with Rashba and Dresselhaus interface–SO contributions. The resulting all-electrical, two-axis control is also used to probe the MOS interface noise. The measured inhomogeneous dephasing time, T* 2m, of 1.6 μs is consistent with 99.95% 28Si enrichment. Furthermore, when tuned to be sensitive to exchange fluctuations, a quasi-static charge noise detuning variance of 2 μeV is observed, competitive with low-noise reports in other semiconductor qubits. This work, therefore, demonstrates that the MOS interface inherently provides properties for two-axis qubit control, while not increasing noise relative to other material choices.
Authors:
ORCiD logo [1] ;  [1] ;  [2] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. de Sherbrooke, Sherbrooke, QC (Canada)
Publication Date:
Report Number(s):
SAND-2018-2432J; SAND-2018-0080J
Journal ID: ISSN 2041-1723; 661217
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 9; Journal Issue: 1; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
Work for Others (WFO); USDOE
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE
OSTI Identifier:
1452895
Alternate Identifier(s):
OSTI ID: 1457181

Jock, Ryan Michael, Jacobson, Noah Tobias, Harvey-Collard, Patrick, Mounce, Andrew M., Srinivasa, Vanita, Ward, Daniel Robert, Anderson, John, Manginell, Ron, Wendt, Joel R., Rudolph, Martin, Pluym, Tammy, Gamble, John King, Baczewski, Andrew David, Witzel, Wayne M., and Carroll, Malcolm S.. A silicon metal-oxide-semiconductor electron spin-orbit qubit. United States: N. p., Web. doi:10.1038/s41467-018-04200-0.
Jock, Ryan Michael, Jacobson, Noah Tobias, Harvey-Collard, Patrick, Mounce, Andrew M., Srinivasa, Vanita, Ward, Daniel Robert, Anderson, John, Manginell, Ron, Wendt, Joel R., Rudolph, Martin, Pluym, Tammy, Gamble, John King, Baczewski, Andrew David, Witzel, Wayne M., & Carroll, Malcolm S.. A silicon metal-oxide-semiconductor electron spin-orbit qubit. United States. doi:10.1038/s41467-018-04200-0.
Jock, Ryan Michael, Jacobson, Noah Tobias, Harvey-Collard, Patrick, Mounce, Andrew M., Srinivasa, Vanita, Ward, Daniel Robert, Anderson, John, Manginell, Ron, Wendt, Joel R., Rudolph, Martin, Pluym, Tammy, Gamble, John King, Baczewski, Andrew David, Witzel, Wayne M., and Carroll, Malcolm S.. 2018. "A silicon metal-oxide-semiconductor electron spin-orbit qubit". United States. doi:10.1038/s41467-018-04200-0. https://www.osti.gov/servlets/purl/1452895.
@article{osti_1452895,
title = {A silicon metal-oxide-semiconductor electron spin-orbit qubit},
author = {Jock, Ryan Michael and Jacobson, Noah Tobias and Harvey-Collard, Patrick and Mounce, Andrew M. and Srinivasa, Vanita and Ward, Daniel Robert and Anderson, John and Manginell, Ron and Wendt, Joel R. and Rudolph, Martin and Pluym, Tammy and Gamble, John King and Baczewski, Andrew David and Witzel, Wayne M. and Carroll, Malcolm S.},
abstractNote = {Here, the silicon metal-oxide-semiconductor (MOS) material system is a technologically important implementation of spin-based quantum information processing. However, the MOS interface is imperfect leading to concerns about 1/f trap noise and variability in the electron g-factor due to spin–orbit (SO) effects. Here we advantageously use interface–SO coupling for a critical control axis in a double-quantum-dot singlet–triplet qubit. The magnetic field-orientation dependence of the g-factors is consistent with Rashba and Dresselhaus interface–SO contributions. The resulting all-electrical, two-axis control is also used to probe the MOS interface noise. The measured inhomogeneous dephasing time, T*2m, of 1.6 μs is consistent with 99.95% 28Si enrichment. Furthermore, when tuned to be sensitive to exchange fluctuations, a quasi-static charge noise detuning variance of 2 μeV is observed, competitive with low-noise reports in other semiconductor qubits. This work, therefore, demonstrates that the MOS interface inherently provides properties for two-axis qubit control, while not increasing noise relative to other material choices.},
doi = {10.1038/s41467-018-04200-0},
journal = {Nature Communications},
number = 1,
volume = 9,
place = {United States},
year = {2018},
month = {5}
}