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Title: High-harmonic generation in ZnO driven by self-compressed mid-infrared pulses

Progress in attosecond science has relied on advancements in few-cycle pulse generation technology and its application to high-order harmonic generation. Traditionally, self-phase modulation in bulk solids has been used for the compression of moderate-energy pulses, additionally exhibiting favorable dispersion properties for mid-infrared (mid-IR) pulses. For this study, we use the anomalous dispersion of Y 3Al 5O 12 (YAG) to self-compress many-cycle pulses from a 50 kHz mid-IR OPA down to produce sub-three-cycle 10 μJ pulses and further use them to generate high-order harmonics in a ZnO crystal. In agreement with theoretical predictions, we observe a boost in the harmonic yield by a factor of two, and spectral broadening of above-gap harmonics, compared to longer driving pulses. The enhanced yield results from an increase in the intensity for the self-compressed pulses.
ORCiD logo [1] ;  [1] ; ORCiD logo [2] ; ORCiD logo [3]
  1. Univ. of Central Florida, Orlando, FL (United States). Dept. of Physics
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. Univ. of Central Florida, Orlando, FL (United States). Dept. of Physics, the College of Optics and Photonics and the Center for Research and Education in Optics and Lasers (CREOL)
Publication Date:
Report Number(s):
Journal ID: ISSN 0740-3224; JOBPDE
Grant/Contract Number:
AC52-06NA25396; FA9550-16-1-0149
Accepted Manuscript
Journal Name:
Journal of the Optical Society of America. Part B, Optical Physics
Additional Journal Information:
Journal Volume: 35; Journal Issue: 4; Journal ID: ISSN 0740-3224
Optical Society of America (OSA)
Research Org:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org:
USDOE Office of Science (SC); US Air Force Office of Scientific Research (AFOSR); Oak Ridge Associated Univ., Oak Ridge, TN (United States)
Country of Publication:
United States
36 MATERIALS SCIENCE; Material Science; high harmonic generation in semiconductors
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1425252