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Title: Landau levels and shallow donor states in GaAs/AlGaAs multiple quantum wells at megagauss magnetic fields

Journal Article · · Physical Review B
 [1];  [1];  [1];  [2];  [2];  [2];  [2];  [2];  [2];  [3];  [3]
  1. Univ. of Rzeszów (Poland). Centre for Microelectronics and Nanotechnology
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. Polish Academy of Sciences (PAS), Warsaw (Poland). Inst. of Physics

Landau levels and shallow donor states in multiple GaAs/AlGaAs quantum wells (MQWs) are investigated in this paper by means of the cyclotron resonance at megagauss magnetic fields. Measurements of magneto-optical transitions were performed in pulsed fields up to 140 T and temperatures from 6–300 K. The 14 x 14 P∙p band model for GaAs is used to interpret free-electron transitions in a magnetic field. Temperature behavior of the observed resonant structure indicates, in addition to the free-electron Landau states, contributions of magnetodonor states in the GaAs wells and possibly in the AlGaAs barriers. The magnetodonor energies are calculated using a variational procedure suitable for high magnetic fields and accounting for conduction band nonparabolicity in GaAs. It is shown that the above states, including their spin splitting, allow one to interpret the observed magneto-optical transitions in MQWs in the middle infrared region. Finally, our experimental and theoretical results at very high magnetic fields are consistent with the picture used previously for GaAs/AlGaAs MQWs at lower magnetic fields.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE; National Science Foundation (NSF)
Grant/Contract Number:
AC52-06NA25396; DMR-1157490
OSTI ID:
1441306
Alternate ID(s):
OSTI ID: 1348864
Report Number(s):
LA-UR-17-27396
Journal Information:
Physical Review B, Vol. 95, Issue 11; ISSN 2469-9950
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 4 works
Citation information provided by
Web of Science

References (43)

Perovskite light-emitting diodes based on solution-processed self-organized multiple quantum wells journal September 2016
Multiple Quantum Wells for P T -Symmetric Phononic Crystals journal November 2016
Multiple Quantum Well AlGaAs Nanowires journal February 2008
Electronic properties of D− centers in quantum wells in high magnetic fields journal February 1995
The influence of the growth rate and V/III ratio on the crystal quality of InGaAs/GaAs QW structures grown by MBE and MOCVD methods journal September 2009
Electron Spin Coherence of Shallow Donors in Natural and Isotopically Enriched Germanium journal December 2015
Temperature and many-body effects on the intersubband transition in a GaAs/ Al 0.3 Ga 0.7 As multiple quantum well journal October 1994
Benchmarking Quantum Control Methods on a 12-Qubit System journal May 2006
Theory of impurity photo-ionization spectrum of semiconductors in magnetic fields journal October 1958
Magnetophonon resonance in double quantum wells journal May 2009
Excitonic Many-Body Interactions in Two-Dimensional Lead Iodide Perovskite Quantum Wells journal March 2015
Energy level scheme of InAs / In x Ga 1 − x As / GaAs quantum-dots-in-a-well infrared photodetector structures journal July 2010
Optical detection of symmetric and antisymmetric states in double quantum wells at room temperature journal September 2009
Valence Bands of Germanium and Silicon in an External Magnetic Field journal March 1962
Negative-donor centres in quantum wells journal January 1992
Potential and magnetic field confinement of shallow donor impurities in semiconductor quantum wells journal July 1989
Electro-refractive effect in Ge/SiGe multiple quantum wells journal February 2013
Experimental and theoretical study of magnetodonors in GaAs and InP at megagauss fields journal January 1994
Intersubband absorption line broadening in semiconductor quantum wells: Nonparabolicity contribution journal February 1991
Three-Dimensional Mapping of Quantum Wells in a GaN/InGaN Core–Shell Nanowire Light-Emitting Diode Array journal August 2013
Far-infrared magnetoabsorption study of weakly bound electrons in GaAs / Al x Ga 1 − x As multiple quantum wells journal November 1987
Triplet transitions of D − centers in quantum wells in high magnetic fields journal August 1994
Quantum Cascade Laser journal April 1994
Quantum of optical absorption in two-dimensional semiconductors journal July 2013
Dominant shallow donors in zinc oxide layers obtained by low-temperature atomic layer deposition: Electrical and optical investigations journal February 2014
Modeling of multiple-quantum-well solar cells including capture, escape, and recombination of photoexcited carriers in quantum wells journal May 2003
Giant nonlinear response from plasmonic metasurfaces coupled to intersubband transitions journal July 2014
Magnetooptical detection of carrier-dynamics in p-type indiumantimonide journal April 2004
Magnetospectroscopy of symmetric and anti-symmetric states in double quantum wells journal February 2008
Anomalous deep-level transients related to quantum well piezoelectric fields in In y Ga 1 − y N ∕ Ga N -heterostructure light-emitting diodes journal January 2008
Electron–electron interaction in Multiple Quantum Wells journal July 2012
Intrinsic optical intersubband bistability in quantum well structures: Role of multiple reflections journal January 2015
Well-width dependence of D − cyclotron resonance in quantum wells journal July 1993
Hyperfine Stark effect of shallow donors in silicon journal November 2014
Five-level kp model for the conduction and valence bands of GaAs and InP journal May 1996
Two-dimensional D − centers journal September 1990
Effects of the screened exchange interaction on the tunneling and Landau gaps in double quantum wells journal July 1996
Circular polarization dependent cyclotron resonance in large-area graphene in ultrahigh magnetic fields journal May 2012
Continuous Voltage Tunability of Intersubband Relaxation Times in Coupled SiGe Quantum Well Structures Using Ultrafast Spectroscopy journal April 2009
Temperature dependence of the electron spin g factor in GaAs journal December 2008
Excited states of donors in quantum wells in a magnetic field journal September 1991
Many-electron effects on quasi-two-dimensional shallow-donor impurity states in high magnetic fields journal January 1993
Infrared magnetospectroscopy of GaAs at magnetic fields up to 150 T journal September 1989

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Recent advances in ternary two-dimensional materials: synthesis, properties and applications journal January 2017
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Figures / Tables (7)