skip to main content

DOE PAGESDOE PAGES

This content will become publicly available on June 7, 2019

Title: The initial stages of ZnO atomic layer deposition on atomically flat In 0.53 Ga 0.47 As substrates

Growth per cycle. Visualizing the fabrication of a ZnO ultra-thin layer at the very early stage of ZnO ALD on InGaAs substrate, before the 3D growth mode begins.
Authors:
 [1] ;  [1] ;  [1] ; ORCiD logo [1] ;  [1] ;  [2] ;  [3] ; ORCiD logo [4] ; ORCiD logo [1]
  1. Univ. Grenoble Alpes, CNRS, F-38000 Grenoble, France
  2. Synchrotron SOLEIL - Beamline SIRIUS, L’ Orme des Merisiers, Saint-Aubin, France
  3. Materials Science Division, Argonne National Laboratory, Argonne, USA
  4. Aix-Marseille Université, CNRS, Université de Toulon, F-13397 Marseille, France
Publication Date:
Type:
Publisher's Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Name: Nanoscale Journal Volume: 10 Journal Issue: 24; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry (RSC)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United Kingdom
Language:
English
OSTI Identifier:
1441229

Skopin, Evgeniy V., Rapenne, Laetitia, Roussel, Hervé, Deschanvres, Jean-Luc, Blanquet, Elisabeth, Ciatto, Gianluca, Fong, Dillon D., Richard, Marie-Ingrid, and Renevier, Hubert. The initial stages of ZnO atomic layer deposition on atomically flat In 0.53 Ga 0.47 As substrates. United Kingdom: N. p., Web. doi:10.1039/C8NR02440E.
Skopin, Evgeniy V., Rapenne, Laetitia, Roussel, Hervé, Deschanvres, Jean-Luc, Blanquet, Elisabeth, Ciatto, Gianluca, Fong, Dillon D., Richard, Marie-Ingrid, & Renevier, Hubert. The initial stages of ZnO atomic layer deposition on atomically flat In 0.53 Ga 0.47 As substrates. United Kingdom. doi:10.1039/C8NR02440E.
Skopin, Evgeniy V., Rapenne, Laetitia, Roussel, Hervé, Deschanvres, Jean-Luc, Blanquet, Elisabeth, Ciatto, Gianluca, Fong, Dillon D., Richard, Marie-Ingrid, and Renevier, Hubert. 2018. "The initial stages of ZnO atomic layer deposition on atomically flat In 0.53 Ga 0.47 As substrates". United Kingdom. doi:10.1039/C8NR02440E.
@article{osti_1441229,
title = {The initial stages of ZnO atomic layer deposition on atomically flat In 0.53 Ga 0.47 As substrates},
author = {Skopin, Evgeniy V. and Rapenne, Laetitia and Roussel, Hervé and Deschanvres, Jean-Luc and Blanquet, Elisabeth and Ciatto, Gianluca and Fong, Dillon D. and Richard, Marie-Ingrid and Renevier, Hubert},
abstractNote = {Growth per cycle. Visualizing the fabrication of a ZnO ultra-thin layer at the very early stage of ZnO ALD on InGaAs substrate, before the 3D growth mode begins.},
doi = {10.1039/C8NR02440E},
journal = {Nanoscale},
number = 24,
volume = 10,
place = {United Kingdom},
year = {2018},
month = {1}
}

Works referenced in this record:

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
journal, June 2005
  • Puurunen, Riikka L.
  • Journal of Applied Physics, Vol. 97, Issue 12, Article No. 121301
  • DOI: 10.1063/1.1940727

Atomic Layer Deposition: An Overview
journal, January 2010
  • George, Steven M.
  • Chemical Reviews, Vol. 110, Issue 1, p. 111-131
  • DOI: 10.1021/cr900056b