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Title: Tuning Excitonic Properties of Pure and Mixed Halide Perovskite Thin Films via Interfacial Engineering

Authors:
 [1];  [1];  [1];  [2];  [2]; ORCiD logo [1]
  1. School of Natural Sciences, University of California, Merced CA 95344 USA
  2. School of Engineering, University of California, Merced CA 95344 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1441052
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Advanced Materials Interfaces
Additional Journal Information:
Journal Name: Advanced Materials Interfaces Journal Volume: 5 Journal Issue: 14; Journal ID: ISSN 2196-7350
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Nikolaidou, Katerina, Sarang, Som, Martin, Denzal, Tung, Vincent, Lu, Jennifer Q., and Ghosh, Sayantani. Tuning Excitonic Properties of Pure and Mixed Halide Perovskite Thin Films via Interfacial Engineering. Germany: N. p., 2018. Web. doi:10.1002/admi.201800209.
Nikolaidou, Katerina, Sarang, Som, Martin, Denzal, Tung, Vincent, Lu, Jennifer Q., & Ghosh, Sayantani. Tuning Excitonic Properties of Pure and Mixed Halide Perovskite Thin Films via Interfacial Engineering. Germany. doi:10.1002/admi.201800209.
Nikolaidou, Katerina, Sarang, Som, Martin, Denzal, Tung, Vincent, Lu, Jennifer Q., and Ghosh, Sayantani. Thu . "Tuning Excitonic Properties of Pure and Mixed Halide Perovskite Thin Films via Interfacial Engineering". Germany. doi:10.1002/admi.201800209.
@article{osti_1441052,
title = {Tuning Excitonic Properties of Pure and Mixed Halide Perovskite Thin Films via Interfacial Engineering},
author = {Nikolaidou, Katerina and Sarang, Som and Martin, Denzal and Tung, Vincent and Lu, Jennifer Q. and Ghosh, Sayantani},
abstractNote = {},
doi = {10.1002/admi.201800209},
journal = {Advanced Materials Interfaces},
number = 14,
volume = 5,
place = {Germany},
year = {2018},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1002/admi.201800209

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