Synthesis and characterization of Ca-doped LaMnAsO
- Ames Lab. and Iowa State Univ., Ames, IA (United States)
- Univ. of Missouri, Columbia, MO (United States)
Here, we report on our attempt to hole-dope the antiferromagnetic semiconductor LaMnAsO by substitution of the La3+ site by Ca2+. We use neutron and x-ray diffraction, magnetic susceptibility, and transport techniques to characterize polycrystalline (La1–xCax)MnAsO samples prepared by solid-state reaction and find that the parent compound is highly resistant to substitution with an upper limit x ≤ 0.01. Magnetic susceptibility of the parent and the x = 0.002(xnom = 0.04) compounds indicate a negligible presence of magnetic impurities (i.e., MnO or MnAs). Rietveld analysis of neutron and x-ray diffraction data shows the preservation of both the tetragonal (P4/nmm) structure upon doping and the antiferromagnetic ordering temperature, TN = 355 ± 5 K.
- Research Organization:
- Ames Laboratory (AMES), Ames, IA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- Grant/Contract Number:
- AC02-07CH11358
- OSTI ID:
- 1441003
- Alternate ID(s):
- OSTI ID: 1437677
- Report Number(s):
- IS-J-9679; PRMHAR; TRN: US1900862
- Journal Information:
- Physical Review Materials, Vol. 2, Issue 5; ISSN 2475-9953
- Publisher:
- American Physical Society (APS)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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