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Title: Synthesis and characterization of Ca-doped LaMnAsO

Journal Article · · Physical Review Materials
 [1];  [1];  [1];  [1];  [2];  [1];  [1]
  1. Ames Lab. and Iowa State Univ., Ames, IA (United States)
  2. Univ. of Missouri, Columbia, MO (United States)

Here, we report on our attempt to hole-dope the antiferromagnetic semiconductor LaMnAsO by substitution of the La3+ site by Ca2+. We use neutron and x-ray diffraction, magnetic susceptibility, and transport techniques to characterize polycrystalline (La1–xCax)MnAsO samples prepared by solid-state reaction and find that the parent compound is highly resistant to substitution with an upper limit x ≤ 0.01. Magnetic susceptibility of the parent and the x = 0.002(xnom = 0.04) compounds indicate a negligible presence of magnetic impurities (i.e., MnO or MnAs). Rietveld analysis of neutron and x-ray diffraction data shows the preservation of both the tetragonal (P4/nmm) structure upon doping and the antiferromagnetic ordering temperature, TN = 355 ± 5 K.

Research Organization:
Ames Laboratory (AMES), Ames, IA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
AC02-07CH11358
OSTI ID:
1441003
Alternate ID(s):
OSTI ID: 1437677
Report Number(s):
IS-J-9679; PRMHAR; TRN: US1900862
Journal Information:
Physical Review Materials, Vol. 2, Issue 5; ISSN 2475-9953
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

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Figures / Tables (9)