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Title: Impact of thermally dead volume on phonon conduction along silicon nanoladders

Silicon nanoladders show that thermally dead volume minimally impacts on the ballistic effects.
Authors:
ORCiD logo [1] ;  [2] ;  [3] ;  [1] ;  [4] ;  [5] ;  [6] ;  [7] ; ORCiD logo [8] ;  [1] ;  [3] ;  [1]
  1. Department of Mechanical Engineering, Stanford University, Stanford, USA
  2. Department of Electrical Engineering, Stanford University, Stanford, USA
  3. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, USA
  4. Department of Mechanical Engineering, Stanford University, Stanford, USA, Department of Materials Science and Engineering
  5. Department of Mechanical Engineering, Stanford University, Stanford, USA, Department of Electrical Engineering
  6. Geballe Laboratory for Advanced Materials, Stanford University, Stanford, USA
  7. Department of Mechanical Engineering, Hanyang University, Seoul, South Korea
  8. Department of Electrical and Computer Engineering, The University of Texas at San Antonio, San Antonio, USA
Publication Date:
Grant/Contract Number:
SC0001299; FG02-09ER46577
Type:
Publisher's Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Name: Nanoscale Journal Volume: 10 Journal Issue: 23; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry (RSC)
Sponsoring Org:
USDOE
Country of Publication:
United Kingdom
Language:
English
OSTI Identifier:
1440794

Park, Woosung, Sohn, Joon, Romano, Giuseppe, Kodama, Takashi, Sood, Aditya, Katz, Joseph S., Kim, Brian S. Y., So, Hongyun, Ahn, Ethan C., Asheghi, Mehdi, Kolpak, Alexie M., and Goodson, Kenneth E.. Impact of thermally dead volume on phonon conduction along silicon nanoladders. United Kingdom: N. p., Web. doi:10.1039/C8NR01788C.
Park, Woosung, Sohn, Joon, Romano, Giuseppe, Kodama, Takashi, Sood, Aditya, Katz, Joseph S., Kim, Brian S. Y., So, Hongyun, Ahn, Ethan C., Asheghi, Mehdi, Kolpak, Alexie M., & Goodson, Kenneth E.. Impact of thermally dead volume on phonon conduction along silicon nanoladders. United Kingdom. doi:10.1039/C8NR01788C.
Park, Woosung, Sohn, Joon, Romano, Giuseppe, Kodama, Takashi, Sood, Aditya, Katz, Joseph S., Kim, Brian S. Y., So, Hongyun, Ahn, Ethan C., Asheghi, Mehdi, Kolpak, Alexie M., and Goodson, Kenneth E.. 2018. "Impact of thermally dead volume on phonon conduction along silicon nanoladders". United Kingdom. doi:10.1039/C8NR01788C.
@article{osti_1440794,
title = {Impact of thermally dead volume on phonon conduction along silicon nanoladders},
author = {Park, Woosung and Sohn, Joon and Romano, Giuseppe and Kodama, Takashi and Sood, Aditya and Katz, Joseph S. and Kim, Brian S. Y. and So, Hongyun and Ahn, Ethan C. and Asheghi, Mehdi and Kolpak, Alexie M. and Goodson, Kenneth E.},
abstractNote = {Silicon nanoladders show that thermally dead volume minimally impacts on the ballistic effects.},
doi = {10.1039/C8NR01788C},
journal = {Nanoscale},
number = 23,
volume = 10,
place = {United Kingdom},
year = {2018},
month = {1}
}

Works referenced in this record:

Enhanced thermoelectric performance of rough silicon nanowires
journal, January 2008
  • Hochbaum, Allon I.; Chen, Renkun; Delgado, Raul Diaz
  • Nature, Vol. 451, Issue 7175, p. 163-167
  • DOI: 10.1038/nature06381

Thermal conductivity of individual silicon nanowires
journal, October 2003
  • Li, Deyu; Wu, Yiying; Kim, Philip
  • Applied Physics Letters, Vol. 83, Issue 14, p. 2934-2936
  • DOI: 10.1063/1.1616981