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Title: Impact of thermally dead volume on phonon conduction along silicon nanoladders

Abstract

Silicon nanoladders show that thermally dead volume minimally impacts on the ballistic effects.

Authors:
ORCiD logo [1];  [2];  [3];  [1];  [4];  [5];  [6];  [7]; ORCiD logo [8];  [1];  [3];  [1]
  1. Department of Mechanical Engineering, Stanford University, Stanford, USA
  2. Department of Electrical Engineering, Stanford University, Stanford, USA
  3. Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, USA
  4. Department of Mechanical Engineering, Stanford University, Stanford, USA, Department of Materials Science and Engineering
  5. Department of Mechanical Engineering, Stanford University, Stanford, USA, Department of Electrical Engineering
  6. Geballe Laboratory for Advanced Materials, Stanford University, Stanford, USA
  7. Department of Mechanical Engineering, Hanyang University, Seoul, South Korea
  8. Department of Electrical and Computer Engineering, The University of Texas at San Antonio, San Antonio, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1440794
Grant/Contract Number:  
SC0001299; FG02-09ER46577
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Nanoscale
Additional Journal Information:
Journal Name: Nanoscale Journal Volume: 10 Journal Issue: 23; Journal ID: ISSN 2040-3364
Publisher:
Royal Society of Chemistry (RSC)
Country of Publication:
United Kingdom
Language:
English

Citation Formats

Park, Woosung, Sohn, Joon, Romano, Giuseppe, Kodama, Takashi, Sood, Aditya, Katz, Joseph S., Kim, Brian S. Y., So, Hongyun, Ahn, Ethan C., Asheghi, Mehdi, Kolpak, Alexie M., and Goodson, Kenneth E. Impact of thermally dead volume on phonon conduction along silicon nanoladders. United Kingdom: N. p., 2018. Web. doi:10.1039/C8NR01788C.
Park, Woosung, Sohn, Joon, Romano, Giuseppe, Kodama, Takashi, Sood, Aditya, Katz, Joseph S., Kim, Brian S. Y., So, Hongyun, Ahn, Ethan C., Asheghi, Mehdi, Kolpak, Alexie M., & Goodson, Kenneth E. Impact of thermally dead volume on phonon conduction along silicon nanoladders. United Kingdom. doi:10.1039/C8NR01788C.
Park, Woosung, Sohn, Joon, Romano, Giuseppe, Kodama, Takashi, Sood, Aditya, Katz, Joseph S., Kim, Brian S. Y., So, Hongyun, Ahn, Ethan C., Asheghi, Mehdi, Kolpak, Alexie M., and Goodson, Kenneth E. Mon . "Impact of thermally dead volume on phonon conduction along silicon nanoladders". United Kingdom. doi:10.1039/C8NR01788C.
@article{osti_1440794,
title = {Impact of thermally dead volume on phonon conduction along silicon nanoladders},
author = {Park, Woosung and Sohn, Joon and Romano, Giuseppe and Kodama, Takashi and Sood, Aditya and Katz, Joseph S. and Kim, Brian S. Y. and So, Hongyun and Ahn, Ethan C. and Asheghi, Mehdi and Kolpak, Alexie M. and Goodson, Kenneth E.},
abstractNote = {Silicon nanoladders show that thermally dead volume minimally impacts on the ballistic effects.},
doi = {10.1039/C8NR01788C},
journal = {Nanoscale},
number = 23,
volume = 10,
place = {United Kingdom},
year = {2018},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1039/C8NR01788C

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Cited by: 2 works
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