Charge trapping properties of Ge nanocrystals grown via solid-state dewetting

Jadli, I.; Aouassa, M.; Johnston, S.; Maaref, H.; Favre, L.; Ronda, A.; Berbezier, I.; M'ghaieth, R.

doi:10.1016/j.jallcom.2018.05.022

Title: Charge trapping properties of Ge nanocrystals grown via solid-state dewetting

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Abstract

In the present work, we report on the charge trapping properties of Germanium Nanocrystals (Ge NCs) self assembled on SiO₂ thin layer for promising applications in next-generation non volatile memory by the means of Deep Level Transient Spectroscopy (DLTS) and high frequency C-V method. The Ge NCs were grown via dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing and passivated with silicon before SiO₂ capping. The role of the surface passivation is to reduce the electrical defect density at the Ge NCs-SiO₂ interface. The presence of the Ge NCs in the oxide of the MOS capacitors strongly affects the C-V characteristics and increases the accumulation capacitance, causes a negative flat band voltage (VFB) shift. The DLTS has been used to study the individual Ge NCs as a single point deep level defect in the oxide. DLTS reveals two main features: the first electron traps around 255 K could correspond to dangling bonds at the Si/SiO2 interface and the second, at high-temperature (>300 K) response, could be originated from minority carrier generation in Ge NCs.

Authors:

Jadli, I. ^[1]; Aouassa, M. ^[1]; Johnston, S. ^[2]; Maaref, H. ^[1]; Favre, L. ^[3]; Ronda, A. ^[1]; Berbezier, I. ^[3]; M'ghaieth, R. ^[1]

Monastir Univ. (Tunisia)
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Aix-Marseille Univ., and CNRS/IN2P3, Marseille (France)

Publication Date:: Fri May 04 00:00:00 EDT 2018

Research Org.:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE)

OSTI Identifier:: 1440737

Report Number(s):: NREL/JA-5K00-71687
Journal ID: ISSN 0925-8388

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Accepted Manuscript

Journal Name:: Journal of Alloys and Compounds

Additional Journal Information:: Journal Volume: 756; Journal Issue: C; Journal ID: ISSN 0925-8388

Publisher:: Elsevier

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; Ge NCs; dewetting; nonvolatile memory

Citation Formats


                    Jadli, I., Aouassa, M., Johnston, S., Maaref, H., Favre, L., Ronda, A., Berbezier, I., and M'ghaieth, R. Charge trapping properties of Ge nanocrystals grown via solid-state dewetting.  United States: N. p., 2018. 
Web.  doi:10.1016/j.jallcom.2018.05.022.

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                    Jadli, I., Aouassa, M., Johnston, S., Maaref, H., Favre, L., Ronda, A., Berbezier, I., & M'ghaieth, R. Charge trapping properties of Ge nanocrystals grown via solid-state dewetting.  United States.  https://doi.org/10.1016/j.jallcom.2018.05.022

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                    Jadli, I., Aouassa, M., Johnston, S., Maaref, H., Favre, L., Ronda, A., Berbezier, I., and M'ghaieth, R. Fri .  
"Charge trapping properties of Ge nanocrystals grown via solid-state dewetting".  United States.  https://doi.org/10.1016/j.jallcom.2018.05.022.  https://www.osti.gov/servlets/purl/1440737.

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@article{osti_1440737,

  title        = {Charge trapping properties of Ge nanocrystals grown via solid-state dewetting},

  author       = {Jadli, I. and Aouassa, M. and Johnston, S. and Maaref, H. and Favre, L. and Ronda, A. and Berbezier, I. and M'ghaieth, R.},

  abstractNote = {In the present work, we report on the charge trapping properties of Germanium Nanocrystals (Ge NCs) self assembled on SiO2 thin layer for promising applications in next-generation non volatile memory by the means of Deep Level Transient Spectroscopy (DLTS) and high frequency C-V method. The Ge NCs were grown via dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing and passivated with silicon before SiO2 capping. The role of the surface passivation is to reduce the electrical defect density at the Ge NCs-SiO2 interface. The presence of the Ge NCs in the oxide of the MOS capacitors strongly affects the C-V characteristics and increases the accumulation capacitance, causes a negative flat band voltage (VFB) shift. The DLTS has been used to study the individual Ge NCs as a single point deep level defect in the oxide. DLTS reveals two main features: the first electron traps around 255 K could correspond to dangling bonds at the Si/SiO2 interface and the second, at high-temperature (>300 K) response, could be originated from minority carrier generation in Ge NCs.},

  doi          = {10.1016/j.jallcom.2018.05.022},

  journal      = {Journal of Alloys and Compounds},

  number       = C,

  volume       = 756,

  place        = {United States},

  year         = {Fri May 04 00:00:00 EDT 2018},

  month        = {Fri May 04 00:00:00 EDT 2018}

}

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