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Title: Charge trapping properties of Ge nanocrystals grown via solid-state dewetting

Abstract

In the present work, we report on the charge trapping properties of Germanium Nanocrystals (Ge NCs) self assembled on SiO 2 thin layer for promising applications in next-generation non volatile memory by the means of Deep Level Transient Spectroscopy (DLTS) and high frequency C-V method. The Ge NCs were grown via dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing and passivated with silicon before SiO 2 capping. The role of the surface passivation is to reduce the electrical defect density at the Ge NCs-SiO 2 interface. The presence of the Ge NCs in the oxide of the MOS capacitors strongly affects the C-V characteristics and increases the accumulation capacitance, causes a negative flat band voltage (VFB) shift. The DLTS has been used to study the individual Ge NCs as a single point deep level defect in the oxide. DLTS reveals two main features: the first electron traps around 255 K could correspond to dangling bonds at the Si/SiO2 interface and the second, at high-temperature (>300 K) response, could be originated from minority carrier generation in Ge NCs.

Authors:
 [1];  [1];  [2];  [1];  [3];  [1];  [3];  [1]
  1. Monastir Univ. (Tunisia)
  2. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  3. Aix-Marseille Univ., and CNRS/IN2P3, Marseille (France)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
1440737
Report Number(s):
[NREL/JA-5K00-71687]
[Journal ID: ISSN 0925-8388]
Grant/Contract Number:  
[AC36-08GO28308]
Resource Type:
Accepted Manuscript
Journal Name:
Journal of Alloys and Compounds
Additional Journal Information:
[ Journal Volume: 756; Journal Issue: C]; Journal ID: ISSN 0925-8388
Publisher:
Elsevier
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Ge NCs; dewetting; nonvolatile memory

Citation Formats

Jadli, I., Aouassa, M., Johnston, S., Maaref, H., Favre, L., Ronda, A., Berbezier, I., and M'ghaieth, R. Charge trapping properties of Ge nanocrystals grown via solid-state dewetting. United States: N. p., 2018. Web. doi:10.1016/j.jallcom.2018.05.022.
Jadli, I., Aouassa, M., Johnston, S., Maaref, H., Favre, L., Ronda, A., Berbezier, I., & M'ghaieth, R. Charge trapping properties of Ge nanocrystals grown via solid-state dewetting. United States. doi:10.1016/j.jallcom.2018.05.022.
Jadli, I., Aouassa, M., Johnston, S., Maaref, H., Favre, L., Ronda, A., Berbezier, I., and M'ghaieth, R. Fri . "Charge trapping properties of Ge nanocrystals grown via solid-state dewetting". United States. doi:10.1016/j.jallcom.2018.05.022. https://www.osti.gov/servlets/purl/1440737.
@article{osti_1440737,
title = {Charge trapping properties of Ge nanocrystals grown via solid-state dewetting},
author = {Jadli, I. and Aouassa, M. and Johnston, S. and Maaref, H. and Favre, L. and Ronda, A. and Berbezier, I. and M'ghaieth, R.},
abstractNote = {In the present work, we report on the charge trapping properties of Germanium Nanocrystals (Ge NCs) self assembled on SiO2 thin layer for promising applications in next-generation non volatile memory by the means of Deep Level Transient Spectroscopy (DLTS) and high frequency C-V method. The Ge NCs were grown via dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing and passivated with silicon before SiO2 capping. The role of the surface passivation is to reduce the electrical defect density at the Ge NCs-SiO2 interface. The presence of the Ge NCs in the oxide of the MOS capacitors strongly affects the C-V characteristics and increases the accumulation capacitance, causes a negative flat band voltage (VFB) shift. The DLTS has been used to study the individual Ge NCs as a single point deep level defect in the oxide. DLTS reveals two main features: the first electron traps around 255 K could correspond to dangling bonds at the Si/SiO2 interface and the second, at high-temperature (>300 K) response, could be originated from minority carrier generation in Ge NCs.},
doi = {10.1016/j.jallcom.2018.05.022},
journal = {Journal of Alloys and Compounds},
number = [C],
volume = [756],
place = {United States},
year = {2018},
month = {5}
}

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