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Title: Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities

Abstract

Single-walled carbon nanotubes are a promising material as quantum light sources at room temperature and as nanoscale light sources for integrated photonic circuits on silicon. Here, we show that the integration of dopant states in carbon nanotubes and silicon microcavities can provide bright and high-purity single-photon emitters on a silicon photonics platform at room temperature. We perform photoluminescence spectroscopy and observe the enhancement of emission from the dopant states by a factor of ~50, and cavity-enhanced radiative decay is confirmed using time-resolved measurements, in which a ~30% decrease of emission lifetime is observed. The statistics of photons emitted from the cavity-coupled dopant states are investigated by photon-correlation measurements, and high-purity single photon generation is observed. The excitation power dependence of photon emission statistics shows that the degree of photon antibunching can be kept high even when the excitation power increases, while the single-photon emission rate can be increased to ~1.7 × 107 Hz.

Authors:
 [1]; ORCiD logo [2]; ORCiD logo [2];  [3]; ORCiD logo [2]; ORCiD logo [2]; ORCiD logo [1]
  1. RIKEN, Saitama (Japan). Nanoscale Quantum Photonics Lab.; RIKEN Center for Advanced Photonics, Saitama (Japan). Quantum Optoelectronics Research Team
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. RIKEN, Saitama (Japan). Nanoscale Quantum Photonics Lab.; Univ. of Tokyo (Japan). Dept. of Electrical Engineering
Publication Date:
Research Org.:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
Sponsoring Org.:
USDOE Office of Science (SC); USDOE Laboratory Directed Research and Development (LDRD) Program; Japan Society for the Promotion of Science (JSPS); Ministry of Education, Culture, Sports, Science and Technology (MEXT) (Japan)
OSTI Identifier:
1440454
Report Number(s):
LA-UR-18-22596
Journal ID: ISSN 1530-6984
Grant/Contract Number:  
AC52-06NA25396; JP16K13613; JP17H07359
Resource Type:
Accepted Manuscript
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 18; Journal Issue: 6; Journal ID: ISSN 1530-6984
Publisher:
American Chemical Society
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Material Science; Carbon nanotubes; diazonium doping; photoluminescence; photonic crystal; single-photon source

Citation Formats

Ishii, Akihiro, He, Xiaowei, Hartmann, Nicolai F., Machiya, Hidenori, Htoon, Han, Doorn, Stephen K., and Kato, Yuichiro K. Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities. United States: N. p., 2018. Web. doi:10.1021/acs.nanolett.8b01170.
Ishii, Akihiro, He, Xiaowei, Hartmann, Nicolai F., Machiya, Hidenori, Htoon, Han, Doorn, Stephen K., & Kato, Yuichiro K. Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities. United States. https://doi.org/10.1021/acs.nanolett.8b01170
Ishii, Akihiro, He, Xiaowei, Hartmann, Nicolai F., Machiya, Hidenori, Htoon, Han, Doorn, Stephen K., and Kato, Yuichiro K. Mon . "Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities". United States. https://doi.org/10.1021/acs.nanolett.8b01170. https://www.osti.gov/servlets/purl/1440454.
@article{osti_1440454,
title = {Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities},
author = {Ishii, Akihiro and He, Xiaowei and Hartmann, Nicolai F. and Machiya, Hidenori and Htoon, Han and Doorn, Stephen K. and Kato, Yuichiro K.},
abstractNote = {Single-walled carbon nanotubes are a promising material as quantum light sources at room temperature and as nanoscale light sources for integrated photonic circuits on silicon. Here, we show that the integration of dopant states in carbon nanotubes and silicon microcavities can provide bright and high-purity single-photon emitters on a silicon photonics platform at room temperature. We perform photoluminescence spectroscopy and observe the enhancement of emission from the dopant states by a factor of ~50, and cavity-enhanced radiative decay is confirmed using time-resolved measurements, in which a ~30% decrease of emission lifetime is observed. The statistics of photons emitted from the cavity-coupled dopant states are investigated by photon-correlation measurements, and high-purity single photon generation is observed. The excitation power dependence of photon emission statistics shows that the degree of photon antibunching can be kept high even when the excitation power increases, while the single-photon emission rate can be increased to ~1.7 × 107 Hz.},
doi = {10.1021/acs.nanolett.8b01170},
journal = {Nano Letters},
number = 6,
volume = 18,
place = {United States},
year = {2018},
month = {5}
}

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