Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities

doi:10.1021/acs.nanolett.8b01170

Title: Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities

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Abstract

Single-walled carbon nanotubes are a promising material as quantum light sources at room temperature and as nanoscale light sources for integrated photonic circuits on silicon. Here, we show that the integration of dopant states in carbon nanotubes and silicon microcavities can provide bright and high-purity single-photon emitters on a silicon photonics platform at room temperature. We perform photoluminescence spectroscopy and observe the enhancement of emission from the dopant states by a factor of ~50, and cavity-enhanced radiative decay is confirmed using time-resolved measurements, in which a ~30% decrease of emission lifetime is observed. The statistics of photons emitted from the cavity-coupled dopant states are investigated by photon-correlation measurements, and high-purity single photon generation is observed. The excitation power dependence of photon emission statistics shows that the degree of photon antibunching can be kept high even when the excitation power increases, while the single-photon emission rate can be increased to ~1.7 × 10 ⁷ Hz.

Authors:

Ishii, Akihiro ^[1];

^[2];

^[2]; Machiya, Hidenori ^[3];

^[2];

^[1]

RIKEN, Saitama (Japan). Nanoscale Quantum Photonics Lab.; RIKEN Center for Advanced Photonics, Saitama (Japan). Quantum Optoelectronics Research Team
Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
RIKEN, Saitama (Japan). Nanoscale Quantum Photonics Lab.; Univ. of Tokyo (Japan). Dept. of Electrical Engineering

Publication Date:: 2018-05-21

Research Org.:: Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

Sponsoring Org.:: USDOE Office of Science (SC); USDOE Laboratory Directed Research and Development (LDRD) Program; Japan Society for the Promotion of Science (JSPS); Ministry of Education, Culture, Sports, Science and Technology (MEXT) (Japan)

OSTI Identifier:: 1440454

Report Number(s):: LA-UR-18-22596
Journal ID: ISSN 1530-6984

Grant/Contract Number:: AC52-06NA25396; JP16K13613; JP17H07359

Resource Type:: Accepted Manuscript

Journal Name:: Nano Letters

Additional Journal Information:: Journal Volume: 18; Journal Issue: 6; Journal ID: ISSN 1530-6984

Publisher:: American Chemical Society

Country of Publication:: United States

Language:: English

Subject:: 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; Material Science; Carbon nanotubes; diazonium doping; photoluminescence; photonic crystal; single-photon source

Citation Formats


                    Ishii, Akihiro, He, Xiaowei, Hartmann, Nicolai F., Machiya, Hidenori, Htoon, Han, Doorn, Stephen K., and Kato, Yuichiro K. Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities.  United States: N. p., 2018. 
        Web.  doi:10.1021/acs.nanolett.8b01170.

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                    Ishii, Akihiro, He, Xiaowei, Hartmann, Nicolai F., Machiya, Hidenori, Htoon, Han, Doorn, Stephen K., & Kato, Yuichiro K. Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities.  United States.  doi:10.1021/acs.nanolett.8b01170.

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                    Ishii, Akihiro, He, Xiaowei, Hartmann, Nicolai F., Machiya, Hidenori, Htoon, Han, Doorn, Stephen K., and Kato, Yuichiro K. Mon .  
        "Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities".  United States.  doi:10.1021/acs.nanolett.8b01170.  https://www.osti.gov/servlets/purl/1440454.

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@article{osti_1440454,

  title        = {Enhanced Single-Photon Emission from Carbon-Nanotube Dopant States Coupled to Silicon Microcavities},

  author       = {Ishii, Akihiro and He, Xiaowei and Hartmann, Nicolai F. and Machiya, Hidenori and Htoon, Han and Doorn, Stephen K. and Kato, Yuichiro K.},

  abstractNote = {Single-walled carbon nanotubes are a promising material as quantum light sources at room temperature and as nanoscale light sources for integrated photonic circuits on silicon. Here, we show that the integration of dopant states in carbon nanotubes and silicon microcavities can provide bright and high-purity single-photon emitters on a silicon photonics platform at room temperature. We perform photoluminescence spectroscopy and observe the enhancement of emission from the dopant states by a factor of ~50, and cavity-enhanced radiative decay is confirmed using time-resolved measurements, in which a ~30% decrease of emission lifetime is observed. The statistics of photons emitted from the cavity-coupled dopant states are investigated by photon-correlation measurements, and high-purity single photon generation is observed. The excitation power dependence of photon emission statistics shows that the degree of photon antibunching can be kept high even when the excitation power increases, while the single-photon emission rate can be increased to ~1.7 × 107 Hz.},

  doi          = {10.1021/acs.nanolett.8b01170},

  journal      = {Nano Letters},

  number       = 6,

  volume       = 18,

  place        = {United States},

  year         = {2018},

  month        = {5}

}

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DOI: 10.1021/acs.nanolett.8b01170

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