skip to main content


This content will become publicly available on July 17, 2018

Title: Microstructural evolution of ion-irradiated sol–gel-derived thin films

In this paper, the effects of ion irradiation on the microstructural evolution of sol–gel-derived silica-based thin films were examined by combining the results from Fourier transform infrared, Raman, and X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and elastic recoil detection. Variations in the chemical composition, density, and structure of the constituent phases and interfaces were studied, and the results were used to propose a microstructural model for the irradiated films. It was discovered that the microstructure of the films after ion irradiation and decomposition of the starting organic materials consisted of isolated hydrogenated amorphous carbon clusters within an amorphous and carbon-incorporated silica network. A decrease in the bond angle of Si–O–Si bonds in amorphous silica network along with an increase in the concentration of carbon-rich SiO x C y tetrahedra were the major structural changes caused by ion irradiation. Finally, in addition, hydrogen release from free carbon clusters was observed with increasing ion energy and fluence.
 [1] ;  [1] ;  [2] ;  [3] ;  [1]
  1. Oklahoma State Univ., Stillwater, OK (United States). School of Mechanical and Aerospace Engineering
  2. Los Alamos National Lab. (LANL), Los Alamos, NM (United States)
  3. Foundation Inst. of Materials Engineering, Bremen (Germany)
Publication Date:
Report Number(s):
Journal ID: ISSN 0022-2461
Grant/Contract Number:
AC52-06NA25396; OISE-0352377; OISE-0128050
Accepted Manuscript
Journal Name:
Journal of Materials Science
Additional Journal Information:
Journal Volume: 52; Journal Issue: 20; Journal ID: ISSN 0022-2461
Research Org:
Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Oklahoma State Univ., Stillwater, OK (United States); Foundation Inst. of Materials Engineering, Bremen (Germany)
Sponsoring Org:
USDOE Office of Science (SC); USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF); German Research Foundation (DFG)
Country of Publication:
United States
OSTI Identifier: