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Title: Hydrogen passivation of poly-Si/SiO x contacts for Si solar cells using Al 2O 3 studied with deuterium

Abstract

Here, the interplay between hydrogenation and passivation of poly-Si/SiO x contacts to n-type Si wafers is studied using atomic layer deposited Al 2O 3 and anneals in forming gas and nitrogen. The poly-Si/SiO x stacks are prepared by thermal oxidation followed by thermal crystallization of a-Si:H films deposited by plasma-enhanced chemical vapor deposition. Implied open-circuit voltages as high as 710 mV are achieved for p-type poly-Si/SiO x contacts to n-type Si after hydrogenation. Correlating minority carrier lifetime data and secondary ion mass spectrometry profiles reveals that the main benefit of Al 2O 3 is derived from its role as a hydrogen source for chemically passivating defects at SiO x; Al 2O 3 layers are found to hydrogenate poly-Si/SiO x much better than a forming gas anneal. By labelling Al 2O 3 and the subsequent anneal with different hydrogen isotopes, it is found that Al 2O 3 exchanges most of its hydrogen with the ambient upon annealing at 400 °C for 1 h even though there is no significant net change in its total hydrogen content.

Authors:
ORCiD logo [1]; ORCiD logo [2];  [1]; ORCiD logo [2];  [1]; ORCiD logo [2]; ORCiD logo [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Eindhoven Univ. of Technology, Eindhoven (The Netherlands)
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
OSTI Identifier:
1440399
Alternate Identifier(s):
OSTI ID: 1437089
Report Number(s):
NREL/JA-5900-71231
Journal ID: ISSN 0003-6951
Grant/Contract Number:  
AC36-08GO28308; SETP EE00030301
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 112; Journal Issue: 20; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; electrical properties; passivation; atomic layer deposition; secondary ion mass spectroscopy; isotopes; chemical reactions

Citation Formats

Schnabel, Manuel, van de Loo, Bas W. H., Nemeth, William, Macco, Bart, Stradins, Paul, Kessels, W. M. M., and Young, David L. Hydrogen passivation of poly-Si/SiOx contacts for Si solar cells using Al2O3 studied with deuterium. United States: N. p., 2018. Web. doi:10.1063/1.5031118.
Schnabel, Manuel, van de Loo, Bas W. H., Nemeth, William, Macco, Bart, Stradins, Paul, Kessels, W. M. M., & Young, David L. Hydrogen passivation of poly-Si/SiOx contacts for Si solar cells using Al2O3 studied with deuterium. United States. doi:10.1063/1.5031118.
Schnabel, Manuel, van de Loo, Bas W. H., Nemeth, William, Macco, Bart, Stradins, Paul, Kessels, W. M. M., and Young, David L. Mon . "Hydrogen passivation of poly-Si/SiOx contacts for Si solar cells using Al2O3 studied with deuterium". United States. doi:10.1063/1.5031118. https://www.osti.gov/servlets/purl/1440399.
@article{osti_1440399,
title = {Hydrogen passivation of poly-Si/SiOx contacts for Si solar cells using Al2O3 studied with deuterium},
author = {Schnabel, Manuel and van de Loo, Bas W. H. and Nemeth, William and Macco, Bart and Stradins, Paul and Kessels, W. M. M. and Young, David L.},
abstractNote = {Here, the interplay between hydrogenation and passivation of poly-Si/SiOx contacts to n-type Si wafers is studied using atomic layer deposited Al2O3 and anneals in forming gas and nitrogen. The poly-Si/SiOx stacks are prepared by thermal oxidation followed by thermal crystallization of a-Si:H films deposited by plasma-enhanced chemical vapor deposition. Implied open-circuit voltages as high as 710 mV are achieved for p-type poly-Si/SiOx contacts to n-type Si after hydrogenation. Correlating minority carrier lifetime data and secondary ion mass spectrometry profiles reveals that the main benefit of Al2O3 is derived from its role as a hydrogen source for chemically passivating defects at SiOx; Al2O3 layers are found to hydrogenate poly-Si/SiOx much better than a forming gas anneal. By labelling Al2O3 and the subsequent anneal with different hydrogen isotopes, it is found that Al2O3 exchanges most of its hydrogen with the ambient upon annealing at 400 °C for 1 h even though there is no significant net change in its total hydrogen content.},
doi = {10.1063/1.5031118},
journal = {Applied Physics Letters},
number = 20,
volume = 112,
place = {United States},
year = {2018},
month = {5}
}

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Figures / Tables:

Figure 1 Figure 1: Schematic (a) and cross-section HAADF STEM micrographs (b),(c) of symmetric p-type poly-Si/SiOx samples with Al2O3 prepared for this study.

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