skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Obtaining a Low and Wide Atomic Layer Deposition Window (150-275 °C) for In 2 O 3 Films Using an In III Amidinate and H 2 O

Authors:
ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [1]; ORCiD logo [2]; ORCiD logo [1]
  1. Department of Chemistry and Chemical Biology, Harvard University, 12 Oxford Street Cambridge MA 02138 USA
  2. Department of Mechanical Engineering, Baylor University, One Bear Place #97536 Waco TX 76798-7356 USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1440378
Grant/Contract Number:  
AC36-08GO28308
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Chemistry - A European Journal
Additional Journal Information:
Journal Name: Chemistry - A European Journal Journal Volume: 24 Journal Issue: 38; Journal ID: ISSN 0947-6539
Publisher:
Wiley Blackwell (John Wiley & Sons)
Country of Publication:
Germany
Language:
English

Citation Formats

Kim, Sang Bok, Jayaraman, Ashwin, Chua, Danny, Davis, Luke M., Zheng, Shao-Liang, Zhao, Xizhu, Lee, Sunghwan, and Gordon, Roy G. Obtaining a Low and Wide Atomic Layer Deposition Window (150-275 °C) for In 2 O 3 Films Using an In III Amidinate and H 2 O. Germany: N. p., 2018. Web. doi:10.1002/chem.201802317.
Kim, Sang Bok, Jayaraman, Ashwin, Chua, Danny, Davis, Luke M., Zheng, Shao-Liang, Zhao, Xizhu, Lee, Sunghwan, & Gordon, Roy G. Obtaining a Low and Wide Atomic Layer Deposition Window (150-275 °C) for In 2 O 3 Films Using an In III Amidinate and H 2 O. Germany. doi:10.1002/chem.201802317.
Kim, Sang Bok, Jayaraman, Ashwin, Chua, Danny, Davis, Luke M., Zheng, Shao-Liang, Zhao, Xizhu, Lee, Sunghwan, and Gordon, Roy G. Tue . "Obtaining a Low and Wide Atomic Layer Deposition Window (150-275 °C) for In 2 O 3 Films Using an In III Amidinate and H 2 O". Germany. doi:10.1002/chem.201802317.
@article{osti_1440378,
title = {Obtaining a Low and Wide Atomic Layer Deposition Window (150-275 °C) for In 2 O 3 Films Using an In III Amidinate and H 2 O},
author = {Kim, Sang Bok and Jayaraman, Ashwin and Chua, Danny and Davis, Luke M. and Zheng, Shao-Liang and Zhao, Xizhu and Lee, Sunghwan and Gordon, Roy G.},
abstractNote = {},
doi = {10.1002/chem.201802317},
journal = {Chemistry - A European Journal},
number = 38,
volume = 24,
place = {Germany},
year = {2018},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1002/chem.201802317

Citation Metrics:
Cited by: 2 works
Citation information provided by
Web of Science

Save / Share:

Works referenced in this record:

New amidinate complexes of indium( iii ): promising CVD precursors for transparent and conductive In 2 O 3 thin films
journal, January 2017

  • Gebhard, M.; Hellwig, M.; Kroll, A.
  • Dalton Transactions, Vol. 46, Issue 31
  • DOI: 10.1039/C7DT01280B

The chemistry of N,N ′-dimethylformamidine. II. Hydrolysis. Kinetically controlled formation of cis - N -methylformamide
journal, June 1978

  • Halliday, James D.; Symons, E. Allan
  • Canadian Journal of Chemistry, Vol. 56, Issue 11
  • DOI: 10.1139/v78-239

Synthesis and Characterization of Volatile, Thermally Stable, Reactive Transition Metal Amidinates
journal, December 2003

  • Lim, Booyong S.; Rahtu, Antti; Park, Jin-Seong
  • Inorganic Chemistry, Vol. 42, Issue 24
  • DOI: 10.1021/ic0345424

Past achievements and future challenges in the development of optically transparent electrodes
journal, November 2012


Self-Limiting Film Growth of Transparent Conducting In 2 O 3 by Atomic Layer Deposition using Trimethylindium and Water Vapor
journal, July 2011

  • Lee, Do-Joong; Kwon, Jang-Yeon; Lee, Jae Il
  • The Journal of Physical Chemistry C, Vol. 115, Issue 31
  • DOI: 10.1021/jp2024389

Synthesis of indium oxi-sulfide films by atomic layer deposition: The essential role of plasma enhancement
journal, January 2013

  • Bugot, Cathy; Schneider, Nathanaëlle; Lincot, Daniel
  • Beilstein Journal of Nanotechnology, Vol. 4
  • DOI: 10.3762/bjnano.4.85

Growth of In[sub 2]O[sub 3] Thin Films by Atomic Layer Epitaxy
journal, January 1994

  • Asikainen, Timo
  • Journal of The Electrochemical Society, Vol. 141, Issue 11
  • DOI: 10.1149/1.2059303

Atomic Layer Deposition of Tungsten(III) Oxide Thin Films from W 2 (NMe 2 ) 6 and Water:  Precursor-Based Control of Oxidation State in the Thin Film Material
journal, August 2006

  • Dezelah, ; El-Kadri, Oussama M.; Szilágyi, Imre M.
  • Journal of the American Chemical Society, Vol. 128, Issue 30
  • DOI: 10.1021/ja063272w

Low-Temperature Al2O3 Atomic Layer Deposition
journal, February 2004

  • Groner, M. D.; Fabreguette, F. H.; Elam, J. W.
  • Chemistry of Materials, Vol. 16, Issue 4, p. 639-645
  • DOI: 10.1021/cm0304546

Synthesis of Calcium(II) Amidinate Precursors for Atomic Layer Deposition through a Redox Reaction between Calcium and Amidines
journal, June 2016

  • Kim, Sang Bok; Yang, Chuanxi; Powers, Tamara
  • Angewandte Chemie, Vol. 128, Issue 35
  • DOI: 10.1002/ange.201602406

Low Temperature Atomic Layer Deposition of Crystalline In 2 O 3 Films
journal, May 2015

  • Ramachandran, Ranjith K.; Dendooven, Jolien; Poelman, Hilde
  • The Journal of Physical Chemistry C, Vol. 119, Issue 21
  • DOI: 10.1021/acs.jpcc.5b03255

Hydrolysis and Hydrogenolysis of Formamidines:  N,N -Dimethyl and N,N -Dibenzyl Formamidines as Protective Groups for Primary Amines
journal, February 1999

  • Vincent, Stéphane; Mioskowski, Charles; Lebeau, Luc
  • The Journal of Organic Chemistry, Vol. 64, Issue 3
  • DOI: 10.1021/jo980099g

Photoreduction and oxidation of as‐deposited microcrystalline indium oxide
journal, June 1996

  • Xirouchaki, C.; Kiriakidis, G.; Pedersen, T. F.
  • Journal of Applied Physics, Vol. 79, Issue 12
  • DOI: 10.1063/1.362612

Transparent conducting oxide semiconductors for transparent electrodes
journal, March 2005


Nitrogen-doped cuprous oxide as a p-type hole-transporting layer in thin-film solar cells
journal, January 2013

  • Lee, Yun Seog; Heo, Jaeyeong; Winkler, Mark T.
  • Journal of Materials Chemistry A, Vol. 1, Issue 48
  • DOI: 10.1039/c3ta13208k

Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature
journal, June 2013

  • Seo, Jin-Suk; Jeon, Jun-Hyuck; Hwang, Young Hwan
  • Scientific Reports, Vol. 3, Issue 1
  • DOI: 10.1038/srep02085

Atomic Layer Deposition: An Overview
journal, January 2010

  • George, Steven M.
  • Chemical Reviews, Vol. 110, Issue 1, p. 111-131
  • DOI: 10.1021/cr900056b

Highly Conducting, Transparent, and Flexible Indium Oxide Thin Film Prepared by Atomic Layer Deposition Using a New Liquid Precursor Et 2 InN(SiMe 3 ) 2
journal, October 2014

  • Maeng, Wan Joo; Choi, Dong-won; Chung, Kwun-Bum
  • ACS Applied Materials & Interfaces, Vol. 6, Issue 20
  • DOI: 10.1021/am502085c

Atomic layer deposition of highly conductive indium oxide using a liquid precursor and water oxidant
journal, November 2015


Indium Oxide Atomic Layer Deposition Facilitated by the Synergy between Oxygen and Water
journal, April 2011

  • Libera, Joseph A.; Hryn, John N.; Elam, Jeffrey W.
  • Chemistry of Materials, Vol. 23, Issue 8
  • DOI: 10.1021/cm103637t

Oxygen-Free Atomic Layer Deposition of Indium Sulfide
journal, July 2014

  • McCarthy, Robert F.; Weimer, Matthew S.; Emery, Jonathan D.
  • ACS Applied Materials & Interfaces, Vol. 6, Issue 15
  • DOI: 10.1021/am501331w

Improved Chemically Deposited Zn(O,S) Buffers for Cu(In,Ga)(S,Se)<sub>2</sub> Solar Cells by Controlled Incorporation of Indium
journal, January 2016


Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
journal, January 2013

  • Miikkulainen, Ville; Leskelä, Markku; Ritala, Mikko
  • Journal of Applied Physics, Vol. 113, Issue 2, Article No. 021301
  • DOI: 10.1063/1.4757907

Indium-tris-guanidinates: a promising class of precursors for water assisted atomic layer deposition of In 2 O 3 thin films
journal, January 2014

  • Gebhard, M.; Hellwig, M.; Parala, H.
  • Dalton Trans., Vol. 43, Issue 3
  • DOI: 10.1039/C3DT52746H

Thin films of In2O3 by atomic layer deposition using In(acac)3
journal, October 2009


The Race To Replace Tin-Doped Indium Oxide: Which Material Will Win?
journal, December 2009


Atomic Layer Deposition of In 2 O 3 Using Cyclopentadienyl Indium:  A New Synthetic Route to Transparent Conducting Oxide Films
journal, July 2006

  • Elam, Jeffrey W.; Martinson, Alex B. F.; Pellin, Michael J.
  • Chemistry of Materials, Vol. 18, Issue 15
  • DOI: 10.1021/cm060754y

Enhanced Growth Rate in Atomic Layer Epitaxy of Indium Oxide and Indium-Tin Oxide Thin Films
journal, January 1999

  • Ritala, Mikko
  • Electrochemical and Solid-State Letters, Vol. 1, Issue 3
  • DOI: 10.1149/1.1390669

Record Mobility in Transparent p-Type Tin Monoxide Films and Devices by Phase Engineering
journal, May 2013

  • Caraveo-Frescas, Jesus A.; Nayak, Pradipta K.; Al-Jawhari, Hala A.
  • ACS Nano, Vol. 7, Issue 6
  • DOI: 10.1021/nn400852r

Indium oxide thin film prepared by low temperature atomic layer deposition using liquid precursors and ozone oxidant
journal, November 2015


Low Temperature Atomic Layer Deposition of Tin Oxide
journal, September 2010

  • Heo, Jaeyeong; Hock, Adam S.; Gordon, Roy G.
  • Chemistry of Materials, Vol. 22, Issue 17
  • DOI: 10.1021/cm1011108

Synthesis of Calcium(II) Amidinate Precursors for Atomic Layer Deposition through a Redox Reaction between Calcium and Amidines
journal, June 2016

  • Kim, Sang Bok; Yang, Chuanxi; Powers, Tamara
  • Angewandte Chemie International Edition, Vol. 55, Issue 35
  • DOI: 10.1002/anie.201602406

Growth of In 2 O 3 thin films on silicon by the metalorganic chemical vapor deposition method
journal, January 2005

  • Kim, Nam Ho; Myung, Ju Hyun; Kim, Hyoun Woo
  • physica status solidi (a), Vol. 202, Issue 1
  • DOI: 10.1002/pssa.200406916