skip to main content

DOE PAGESDOE PAGES

This content will become publicly available on April 10, 2019

Title: Band Structure of the IV-VI Black Phosphorus Analog and Thermoelectric SnSe

Here, the success of black phosphorus in fast electronic and photonic devices is hindered by its rapid degradation in the presence of oxygen. Orthorhombic tin selenide is a representative of group IV-VI binary compounds that are robust and isoelectronic and share the same structure with black phosphorus. We measure the band structure of SnSe and find highly anisotropic valence bands that form several valleys having fast dispersion within the layers and negligible dispersion across. This is exactly the band structure desired for efficient thermoelectric generation where SnSe has shown great promise.
Authors:
ORCiD logo [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [2] ; ORCiD logo [6]
  1. Princeton Univ., Princeton, NJ (United States); Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Princeton Univ., Princeton, NJ (United States)
  3. Institut za fiziku, Zagreb (Croatia)
  4. Istituto Officina dei Materiali (IOM-CNR), Trieste (Italy); International Centre for Theoretical Physics, Trieste (Italy)
  5. Istituto Officina dei Materiali (IOM-CNR), Trieste (Italy)
  6. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Report Number(s):
BNL-205735-2018-JAAM
Journal ID: ISSN 0031-9007; PRLTAO
Grant/Contract Number:
SC0012704
Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 120; Journal Issue: 15; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
OSTI Identifier:
1440353
Alternate Identifier(s):
OSTI ID: 1432588